IQE018N06NM6CGATMA1 vs IQE022N06LM5CGATMA1 比較
詳細な並列比較: IQE018N06NM6CGATMA1 メーカー: Infineon および IQE022N06LM5CGATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IQE022N06LM5CGATMA1 - 60V OptiMOS 5 N-Ch MOSFET, 2.2mΩ | Infineon
IQE022N06LM5CGATMA1 ✓ 生産中仕様比較
| パラメータ | IQE018N06NM6CGATMA1 | IQE022N06LM5CGATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.21 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 60 V | 60 V |
| Continuous Drain Current (I_D, Tc) | 178 A | — |
| Continuous Drain Current (I_D, Ta) | 25 A | — |
| R_DS(on) max (V_GS=10 V) | 1.8 mΩ | — |
| Gate Threshold Voltage (V_GS(th)) | 3.3 V (logic-level compatible) | [DATA_NEEDED: V_GS(th) value] |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 125 W | — |
| パッケージ | PG-TTFN-9-3 (TOLL/TTFN) | PG-TTFN-9-3 (PQFN 3.3x3.3 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55C to +175C (junction) | -55C to +150C |
| Technology | Trench MOSFET, OptiMOS 6 | N-Channel Power MOSFET (Enhancement Mode) |
| RoHS Compliance | Compliant | — |
| Part Family | — | OptiMOS 5 |
| Continuous Drain Current (I_D) at T_A=25C | — | 24 A |
| Continuous Drain Current (I_D) at T_C=25C | — | 151 A |
| R_DS(on) (typical, V_GS=10V) | — | 2.2 mΩ |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G value] |
| Power Dissipation (T_A) | — | 2.5 W |
| Power Dissipation (T_C) | — | 100 W |
| ピン数 | — | 9 (with exposed thermal pad) |
| RoHS ステータス | — | Compliant |
| Lead-Free | — | Yes |