IQE050N08NM5CGSCATMA1 vs IQE065N10NM5CGSCATMA1 比較
詳細な並列比較: IQE050N08NM5CGSCATMA1 メーカー: Infineon および IQE065N10NM5CGSCATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IQE050N08NM5CGSCATMA1 - 80V 99A OptiMOS 5 N-Channel MOSFET | Infineon
IQE050N08NM5CGSCATMA1 ✓ 生産中仕様比較
| パラメータ | IQE050N08NM5CGSCATMA1 | IQE065N10NM5CGSCATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.74 | $1.28 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 trench-gate |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC | 99 A | — |
| Continuous Drain Current (ID) at TA | 16 A | 13 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 5.0 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.8 V | — |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Total Power Dissipation at TC (PD) | 100 W | — |
| Total Power Dissipation at TA (PD) | 2.5 W | — |
| 動作温度範囲 | -55C to +175C (junction, typical) | -55 C to +150 C |
| パッケージ | PG-WHTFN-9-1 (Source-Down) | PG-WHTFN-9-1 (Source-Down) |
| 実装タイプ | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Lead-free, RoHS compliant | — |
| MSLレベル | 1 | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| トランジスタタイプ | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25 C | — | 85 A |
| On-Resistance (RDS(on)) max at VGS=10V | — | 6.5 mOhm |
| Power Dissipation at TA | — | 2.5 W |
| Power Dissipation at TC | — | 100 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| RoHS ステータス | — | Compliant |
| Lead-Free | — | Yes |