IRF4905LPBF vs IRLS3036TRLPBF 比較
詳細な並列比較: IRF4905LPBF メーカー: Infineon および IRLS3036TRLPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF4905LPBF | IRLS3036TRLPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.98 | $1.39 |
| Polarity | P-Channel | N-Channel |
| Drain-Source Voltage (Vds) | -55 V | — |
| Continuous Drain Current (Id) @ Tc=25C | -74 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | 1100 A |
| On-Resistance Rds(on) max @ Vgs=-10V | 20 mOhm | — |
| Gate Threshold Voltage Vgs(th) typ | [DATA_NEEDED: Vgs(th) typical] | — |
| Gate-Source Voltage (Vgs) max | ±20 V | [DATA_NEEDED: Vgs max +/- V] |
| Total Power Dissipation (Ptot) @ Tc=25C | 200 W | — |
| 動作接合温度 | -55C to +150C | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC value] | — |
| Rise Time (tr) typ | [DATA_NEEDED: rise time] | — |
| Fall Time (tf) typ | [DATA_NEEDED: fall time] | — |
| パッケージ | TO-262 (I2PAK), through-hole, 3-pin | D2PAK (TO-263), surface mount |
| Technology | HEXFET (IR MOSFET) | IR HEXFET (planar DMOS) |
| 実装タイプ | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PbF suffix) | — |
| Avalanche Rated | Yes | — |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) at Tc=25C | — | 270 A |
| Continuous Drain Current (Id) at Tc=100C | — | 195 A |
| Rds(on) max @ Vgs=10V | — | 1.9 mOhm |
| Gate-Source Threshold Voltage (Vgs(th)) | — | Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max] |
| Total Gate Charge (Qg) typ | — | 91 nC |
| Power Dissipation (Pd) at Tc=25C | — | 380 W |
| 動作温度範囲 | — | -55C to +175C |
| MSLレベル | — | 1 |
| RoHS ステータス | — | Compliant (PBF suffix) |
| Lead-Free | — | Yes (PBF suffix) |
| Integrated Body Diode | — | Yes (avalanche rated) |