IRF4905LPBF vs IRLS3036TRLPBF Comparison

Detailed side-by-side comparison of IRF4905LPBF by Infineon and IRLS3036TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF4905LPBF IRLS3036TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Polarity P-Channel N-Channel
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) @ Tc=25C -74 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] 1100 A
On-Resistance Rds(on) max @ Vgs=-10V 20 mOhm —
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical] —
Gate-Source Voltage (Vgs) max ±20 V [DATA_NEEDED: Vgs max +/- V]
Total Power Dissipation (Ptot) @ Tc=25C 200 W —
Operating Junction Temperature -55C to +150C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] —
Rise Time (tr) typ [DATA_NEEDED: rise time] —
Fall Time (tf) typ [DATA_NEEDED: fall time] —
Package TO-262 (I2PAK), through-hole, 3-pin D2PAK (TO-263), surface mount
Technology HEXFET (IR MOSFET) IR HEXFET (planar DMOS)
Mounting Type Through Hole Surface Mount
Lead-Free / RoHS Yes (PbF suffix) —
Avalanche Rated Yes —
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) at Tc=25C — 270 A
Continuous Drain Current (Id) at Tc=100C — 195 A
Rds(on) max @ Vgs=10V — 1.9 mOhm
Gate-Source Threshold Voltage (Vgs(th)) — Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max]
Total Gate Charge (Qg) typ — 91 nC
Power Dissipation (Pd) at Tc=25C — 380 W
Operating Temperature Range — -55C to +175C
MSL Level — 1
RoHS Status — Compliant (PBF suffix)
Lead-Free — Yes (PBF suffix)
Integrated Body Diode — Yes (avalanche rated)

Datasheets & Resources

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