IRF4905LPBF vs IRLS3036TRLPBF 비교
다음의 상세 나란히 비교: IRF4905LPBF 제조: Infineon 및 IRLS3036TRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF4905LPBF | IRLS3036TRLPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.98 | $1.39 |
| Polarity | P-Channel | N-Channel |
| Drain-Source Voltage (Vds) | -55 V | — |
| Continuous Drain Current (Id) @ Tc=25C | -74 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | 1100 A |
| On-Resistance Rds(on) max @ Vgs=-10V | 20 mOhm | — |
| Gate Threshold Voltage Vgs(th) typ | [DATA_NEEDED: Vgs(th) typical] | — |
| Gate-Source Voltage (Vgs) max | ±20 V | [DATA_NEEDED: Vgs max +/- V] |
| Total Power Dissipation (Ptot) @ Tc=25C | 200 W | — |
| 동작 접합 온도 | -55C to +150C | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC value] | — |
| Rise Time (tr) typ | [DATA_NEEDED: rise time] | — |
| Fall Time (tf) typ | [DATA_NEEDED: fall time] | — |
| 패키지 | TO-262 (I2PAK), through-hole, 3-pin | D2PAK (TO-263), surface mount |
| Technology | HEXFET (IR MOSFET) | IR HEXFET (planar DMOS) |
| 실장 유형 | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PbF suffix) | — |
| Avalanche Rated | Yes | — |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) at Tc=25C | — | 270 A |
| Continuous Drain Current (Id) at Tc=100C | — | 195 A |
| Rds(on) max @ Vgs=10V | — | 1.9 mOhm |
| Gate-Source Threshold Voltage (Vgs(th)) | — | Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max] |
| Total Gate Charge (Qg) typ | — | 91 nC |
| Power Dissipation (Pd) at Tc=25C | — | 380 W |
| 동작 온도 범위 | — | -55C to +175C |
| MSL 레벨 | — | 1 |
| RoHS 상태 | — | Compliant (PBF suffix) |
| Lead-Free | — | Yes (PBF suffix) |
| Integrated Body Diode | — | Yes (avalanche rated) |