IRF640NSTRLPBF vs IRF640NPBF 比較
詳細な並列比較: IRF640NSTRLPBF メーカー: Infineon および IRF640NPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF640NSTRLPBF | IRF640NPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.89 | $0.88 |
| FET Type | N-Channel | — |
| Technology | HEXFET (5th generation, trench MOSFET) | HEXFET (5th Generation) |
| Drain-to-Source Voltage (VDS) | 200 V | 200 V |
| Continuous Drain Current (ID, Tc=25C) | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, Tc=25C) | 150 W | — |
| On-Resistance (RDS(on)) at VGS=10V | 0.15 ohm | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | — |
| Total Gate Charge (Qg) | 44.7 nC | 44.7 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| 動作接合温度範囲 | -55C to +175C | — |
| パッケージ | D2PAK (TO-263AB), surface mount, 3-pin (2+tab) | TO-220AB (through-hole, 3-pin) |
| 実装タイプ | Surface Mount (Tape and Reel) | Through Hole |
| Lead-Free (PbF) | Yes | — |
| RoHS ステータス | Compliant | Compliant |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 150 mOhm max at VGS = 10 V |
| Power Dissipation (PD) at Tc=25C | — | 150 W |
| 動作接合温度 | — | -55C to +150C |
| トランジスタタイプ | — | N-Channel Enhancement Mode |
| Avalanche Energy Rated | — | Yes |
| dv/dt Rating | — | Dynamic, rated |
| Lead-Free | — | Yes (PBF suffix) |
| Manufacturer | — | Infineon (formerly International Rectifier) |