IRF7341GTRPBF vs IRF7103TRPBF 比較
詳細な並列比較: IRF7341GTRPBF メーカー: Infineon および IRF7103TRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF7341GTRPBF | IRF7103TRPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.76 | $0.47 |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 5.1 A | 3 A |
| On-Resistance (RDS(on)) max | 50 mOhm at VGS=10V | — |
| Power Dissipation (PD) | 2.4 W | — |
| Maximum Junction Temperature | 175 C | — |
| Configuration | Dual N-Channel | Common Source, Dual Die |
| Technology | IR HEXFET Planar MOSFET | IR MOSFET™ (HEXFET equivalent) |
| パッケージ | 8-SO (SOIC-8) | SO-8 (PG-DSO-8-902) |
| 実装タイプ | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) value] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| 動作温度範囲 | -55 C to +175 C | -55C to +150C (TJ) |
| RoHS ステータス | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | Yes (Pb-free per TRPBF suffix) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7103TRPBF |
| FET Type | — | Dual N-Channel |
| Drain-to-Source Voltage (VDS) | — | 50 V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM value] |
| On-Resistance RDS(on) max | — | 130 mOhm @ VGS=10V |
| On-Resistance RDS(on) typ | — | 0.11 ohm |
| Total Power Dissipation (PD) | — | 2 W |
| Soldering Method | — | Vapour phase, infrared, wave soldering |
| MSLレベル | — | 1 |