IRF7341GTRPBF vs IRF7103TRPBF Comparison
Detailed side-by-side comparison of IRF7341GTRPBF by Infineon and IRF7103TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF7341GTRPBF | IRF7103TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.76 | $0.47 |
| Drain-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) | 5.1 A | 3 A |
| On-Resistance (RDS(on)) max | 50 mOhm at VGS=10V | β |
| Power Dissipation (PD) | 2.4 W | β |
| Maximum Junction Temperature | 175 C | β |
| Configuration | Dual N-Channel | Common Source, Dual Die |
| Technology | IR HEXFET Planar MOSFET | IR MOSFETβ’ (HEXFET equivalent) |
| Package | 8-SO (SOIC-8) | SO-8 (PG-DSO-8-902) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) value] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Operating Temperature Range | -55 C to +175 C | -55C to +150C (TJ) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | Yes (Pb-free per TRPBF suffix) |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRF7103TRPBF |
| FET Type | β | Dual N-Channel |
| Drain-to-Source Voltage (VDS) | β | 50 V |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM value] |
| On-Resistance RDS(on) max | β | 130 mOhm @ VGS=10V |
| On-Resistance RDS(on) typ | β | 0.11 ohm |
| Total Power Dissipation (PD) | β | 2 W |
| Soldering Method | β | Vapour phase, infrared, wave soldering |
| MSL Level | β | 1 |