IRF9540NPBF - P-Ch 100V 23A 117mOhm HEXFET MOSFET | Infineon
部品番号: IRF9540NPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.49 | $1.49 |
| 10 | $1.34 | $13.40 |
| 100 | $1.12 | $112.00 |
| 500 | $0.96 | $480.00 |
| 1,000 | $0.86 | $860.00 |
IRF9540NPBF 概要
A HEXFET power MOSFET is a specific class of power MOSFET that uses a hexagonal cell geometry for the source metallization to maximize channel density per unit die area. HEXFETs sit within the broader MOSFET family, which itself belongs to the field-effect transistor (FET) category of discrete semiconductors. P-channel HEXFETs such as the IRF9540NPBF are commonly used as high-side switches because their gate drive can be referenced to ground (with a suitable pull-up or charge-pump arrangement), simplifying the bootstrap circuitry that N-channel MOSFETs typically require.
Key features include 100 V drain-to-source breakdown voltage (VDS), continuous drain current of 23 A at Tc (derated to lower values at TA), pulsed drain current capability for transient loads, avalanche-rated ruggedness, and a 140 W power dissipation rating at 25 C case temperature. The TO-220AB package supports through-hole mounting and offers a low thermal resistance path for heatsink attachment, contributing to its broad commercial-industrial acceptance at power levels up to approximately 50 W.
The device is manufactured using Infineon's planar cell process technology with a hex-cell layout, delivering low conduction loss, fast switching, and a wide SOA. Its 117 mOhm RDS(on) at VGS = -10 V keeps conduction loss moderate for high-current P-channel paths, and the low gate charge enables efficient PWM operation at frequencies up to 100 kHz.
Typical applications include high-side load switching in industrial control, motor drive H-bridges (as the high-side P-channel half), battery protection and reverse-polarity protection circuits, linear regulators, and DC-DC converters. In H-bridge and half-bridge motor drivers the IRF9540NPBF pairs naturally with its N-channel complement such as the IRF540N, giving matched switching and thermal characteristics.
When designing with this device, ensure the gate-source voltage stays within +/-20 V to prevent oxide rupture, and that the heatsink tab is properly isolated if the drain tab is at a non-ground potential. A 10 kOhm gate-source resistor is recommended to prevent unwanted turn-on from dv/dt-induced Miller coupling. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical design notes not aggregated elsewhere.
ドロップイン代替品: IRF9540NPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRF9540NPBF （同一形状・フットプリント） — 相違点: Package, Technology, Mounting Type, Operating Junction Temperature, Total Gate Charge (Qg).
クイック比較ツール — 並列比較する代替部品を選択:
IRF9540NPBF
✅ ドロップイン✓ 在庫あり
$0.86 / 個
データシートを見る →IRF9540NSTRLPBF
✅ ドロップイン✓ 在庫あり
$0.58 / 個
データシートを見る →IRFZ48NPBF
✅ ドロップイン✓ 在庫あり
$0.65 / 個
データシートを見る →IRF9530NPBF
✅ ドロップイン✓ 在庫あり
$0.65 / 個
データシートを見る →IRF9530NPBF
✅ ドロップイン✓ 在庫あり
$0.65 / 個
データシートを見る →SiHF9540-E3
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IXTP90P10T
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRF9540NPBF 最大定格＆電気的特性
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF9540NPBF |
| トランジスタタイプ | P-Channel MOSFET (HEXFET Power MOSFET) |
| Drain-to-Source Voltage (VDS) | -100 V |
| Continuous Drain Current (ID) at Tc | -23 A |
| Gate-to-Source Voltage (VGS) max | +/-20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V | 117 mOhm |
| Total Gate Charge (Qg) | 64.7 nC |
| Power Dissipation (PD) at Tc=25C | 140 W |
| 動作接合温度範囲 | -55 C to +175 C |
| パッケージ / ケース | TO-220AB (through-hole, 3 pins + tab) |
| 実装タイプ | Through Hole |
| Process Technology | Planar HEXFET cell structure |
| Qualification | JEDEC standard |
| RoHS ステータス | Compliant |
| Lead-Free | Yes (Pb-free matte tin plating) |
IRF9540NPBF ピン構成
| ピン 1 | Gate — MOSFET gate (drive to source for enhancement) |
| ピン 2 | Drain — MOSFET drain (electrically tied to the metal tab/back) |
| ピン 3 | Source — MOSFET source (reference for gate drive) |
安全動作領域 (DC) - per Infineon IRF9540N datasheet
主な用途
IRF9540NPBF の用途: 6 件s: High-Side Load Switch (Industrial 24V / 48V Bus), Battery Reverse-Polarity and Over-Discharge Protection, DC Motor H-Bridge High-Side Switch, Linear-Mode High-Side Current Regulator, Power Supply OR-ing and Hot-Swap Controller, Audio Amplifier Output Stage / Switch.
High-Side Load Switch (Industrial 24V / 48V Bus)
The IRF9540NPBF is well suited to high-side switching on industrial 24V and 48V buses because its -100V VDS rating provides 2x or more headroom above the worst-case transient bus voltage, and its P-channel polarity lets the load be switched by pulling the gate to ground through a small-signal driver - eliminating the bootstrap or charge-pump required by an equivalent N-channel part. The 117 mOhm RDS(on) keeps conduction loss at ~5W when carrying 10A continuously, and the 140W PD rating with a modest TO-220 heatsink absorbs the dissipation comfortably. Place a 10k gate-source resistor across gate-to-source to keep the device off during controller power-up before the gate driver is active. This pattern is used in PLC output modules, industrial sensor power rails, and factory automation I/O blocks.
おすすめ
Battery Reverse-Polarity and Over-Discharge Protection
A common use for the IRF9540NPBF is as the main P-channel pass element in battery protection circuits for multi-cell lithium packs and 24V/36V industrial battery systems. Its -100V VDS easily tolerates the open-circuit voltage of a 7S Li-ion pack (~29.4V) plus inductive transients, and the planar HEXFET cell structure delivers a wide SOA - critical when the MOSFET must absorb simultaneous high VDS and high ID during a short-circuit or reverse-polarity condition. The 117 mOhm RDS(on) keeps the voltage drop and conduction loss acceptable for continuous 10-20A loads. Pair it with a low-side N-channel or a dedicated battery monitor IC that controls the gate to switch off during over-discharge, over-current, or reversed input.
おすすめ
DC Motor H-Bridge High-Side Switch
In a complementary H-bridge or half-bridge DC motor driver, the IRF9540NPBF serves as the high-side P-channel switch on each leg, paired with an N-channel low-side such as the IRF540N. Because both halves share the same 100V VDS, similar on-resistance class, and the same TO-220AB footprint, the thermal and electrical behavior of the bridge legs is matched - simplifying heatsinking and gate-drive timing. The 23A continuous rating covers most sub-1HP brushed DC motors (golf carts, small pumps, robotics actuators). Switching below 100kHz is well within the planar HEXFET process limits, and the 64.7nC total gate charge is small enough that a small gate driver can switch the leg at 20kHz PWM without excessive driver loss.
おすすめ
Linear-Mode High-Side Current Regulator
When used as a linear pass element (in saturation/linear region rather than fully switched), the IRF9540NPBF can regulate current through a load such as an LED string, a heater, or a constant-current source. Its wide SOA from the planar cell structure is the key advantage here, because linear mode operation simultaneously imposes high VDS and high ID - the worst-case thermal stress. With a small gate-source bias network and an op-amp feedback loop, the IRF9540NPBF can serve as the pass element of an adjustable high-side current source up to several amps. Always verify the SOA curve at your specific (VDS, ID, duty cycle) operating point before committing; the datasheet SOA graphs must be consulted for the steady-state DC envelope.
おすすめ
Power Supply OR-ing and Hot-Swap Controller
The IRF9540NPBF can be used as the OR-ing switch in redundant power supply topologies (N+1 redundant DC bus) and as the main switching element in a hot-swap controller. Its -100V rating covers 48V telecom bus rails with substantial transient headroom, and the P-channel polarity simplifies the high-side disconnect - no bootstrap or charge pump required. The 117mOhm RDS(on) keeps voltage drop at ~1V at 10A, which is acceptable for most 48V rails. In a hot-swap application, the wide SOA tolerates the inrush current spike at VBUS charge-up, and the planar cell structure provides well-behaved thermal performance during the brief SOA excursion.
おすすめ
Audio Amplifier Output Stage / Switch
Although not its primary market, the IRF9540NPBF is occasionally used as a high-side mute or protection switch in audio amplifier output stages, where its linear-region capability and P-channel polarity simplify the mute-control logic. The TO-220 package supports a chassis-mount heatsink when the amplifier is delivering continuous high power. For lower-noise audio applications, modern audio MOSFETs with matched complementary pairs are usually preferred, but the IRF9540NPBF remains a serviceable choice in legacy designs and DIY amplifier projects where its universal availability and proven ruggedness outweigh the need for matched gm curves.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRF9540NPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRF9540N | IRF9530NPBF | SiHF9540-E3 | IXTP90P10T |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Vishay | IXYS |
| Package | TO-220AB (through-hole) | TO-220AB (through-hole) - same | TO-220AB (through-hole) - same | TO-220AB (through-hole) - same | TO-220AB (through-hole) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-to-Source Voltage (VDS) | -100 V | -100 V | -100 V | -100 V | -100 V |
| Continuous Drain Current (ID at Tc=25C) | -23 A | -23 A | -12 A (-48%) | -23 A | -23 A |
| RDS(on) max at VGS=-10V | 117 mOhm | 117 mOhm | 200 mOhm | 117 mOhm | 120 mOhm |
| Power Dissipation (PD at Tc=25C) | 140 W | 140 W | 88 W | 140 W | 125 W |
| RoHS / Lead-Free | Yes (Pb-free, RoHS) | No (lead-bearing legacy) | Yes (Pb-free, RoHS) | Yes (Pb-free, RoHS) | Yes (Pb-free, RoHS) |
主な差別化要因
- P-channel polarity enables ground-referenced gate drive （vs IRF540N (N-channel))
- Wide SOA from planar HEXFET cell structure （vs IRF9530NPBF (P-channel, same VDS, lower current))
- Universal TO-220AB footprint with broad cross-brand sourcing （vs SiHF9540-E3 (Vishay cross-reference))
設計ノート
Estimated: at PD = 140 W the case temperature must stay below 175 C. With TO-220AB theta_JC of approximately 1.0 C/W, the silicon-to-case rise is 140 C at full power, so a heatsink rated at (175C - 25C - 140C) / 140W = ~0.07 C/W is needed. Realistically a small clip-on heatsink (1-2 C/W) plus some airflow keeps Tj below 125 C at continuous 30-50 W dissipation. Always use thermal interface material (thermal pad or paste) and tighten the mounting screw to spec - dry-joint thermal resistance can double the junction temperature.
Gate drive traces should be kept short (under 20 mm) to minimize parasitic inductance that can ring above VGS(max) = +/-20 V during fast switching. Place a 10 kOhm gate-source resistor directly across the gate and source pins (physically adjacent to the TO-220 pins, not at the driver end) to keep the device off during controller power-up. The drain tab is electrically tied to the drain pin, so when the drain sits at a non-ground potential, isolate the heatsink with a mica or silicone pad plus a nylon shoulder washer on the mounting screw.
Three recurring mistakes with the IRF9540NPBF: (1) Driving the gate with only a microcontroller GPIO (3.3 V or 5 V) - the device needs at least -10 V VGS for full enhancement; use a gate driver or discrete level shifter. (2) Forgetting the P-channel body diode conduction path when used in an H-bridge - always consider the body diode during dead-time analysis. (3) Driving the gate beyond -20 V VGS during transient ringing - this ruptures the gate oxide and is the most common failure mode for HEXFETs; add a 12 V Zener from gate to source as a clamp.
For a TO-220AB through-hole part, use a pad pattern that gives at least 2 mm of annular ring around each pin hole and a large copper pour on the drain tab pad (if the tab is grounded). The drain tab footprint should match the TO-220AB JEDEC standard pad pitch (2.54 mm pin pitch, 3.81 mm tab center) to ensure mechanical compatibility with off-the-shelf heatsink clips. For high-current paths (above 10 A), use 2 oz copper on the drain and source PCB traces, or stitch multiple vias to inner-layer planes.
コンプライアンス情報
Pb-free matte-tin plating per 'PBF' suffix; RoHS compliant per Infineon product page; not AEC-Q100 qualified (standard part, not automotive grade); JEDEC-qualified silicon per Infineon datasheet.
