IRFR5410TRPBF vs IRFR120NTRPBF 比較

詳細な並列比較: IRFR5410TRPBF メーカー: Infineon および IRFR120NTRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Infineon
IRFR120NTRPBF IRFR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRFR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRFR120NTRPBF ✓ 生産中

仕様比較

パラメータ IRFR5410TRPBF IRFR120NTRPBF
ブランド Infineon Infineon
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.71 $0.26
Polarity P-Channel —
Drain-Source Voltage (VDS) -100 V —
Continuous Drain Current (ID) at TC = 25 °C -13 A —
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V 205 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Total Gate Charge (Qg) typ 70 nC —
パッケージ TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Power Dissition (PD) at TC = 25 °C 66 W —
動作温度範囲 -55 °C to +150 °C (TJ) —
実装タイプ Surface Mount Surface Mount
Technology HEXFET (advanced process, Gen 5) HEXFET (IR MOSFET fifth generation)
Avalanche Rated Yes (fully avalanche rated) —
Lead-Free / RoHS Status Lead-free, RoHS compliant (PBF suffix) Lead-Free, RoHS Compliant
MSLレベル [DATA_NEEDED: MSL rating] —
RDS(on) Test Conditions VGS = -10 V, ID = -7.0 A —
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25C — 9.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD) at TC=25C — 48 W
Static Drain-to-Source On-Resistance (RDS(on)) max — 210 milliohms at VGS=10V
Gate-to-Source Threshold Voltage (VGS(th)) — 2 V to 4 V typical
Total Gate Charge (Qg) typical — 16.7 nC
Gate-to-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-to-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
動作接合温度範囲 — -55C to +175C
Channel Type — N-Channel Enhancement Mode
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS]
Thermal Resistance Junction-to-Case (RthJC) max — [DATA_NEEDED: RthJC]

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