IRFR5410TRPBF vs IRFR120NTRPBF 对比

详细并排对比 IRFR5410TRPBF 出自 Infineon 和 IRFR120NTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR120NTRPBF IRFR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRFR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRFR120NTRPBF ✓ 量产中

规格对比

参数 IRFR5410TRPBF IRFR120NTRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.71 $0.26
Polarity P-Channel —
Drain-Source Voltage (VDS) -100 V —
Continuous Drain Current (ID) at TC = 25 °C -13 A —
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V 205 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Total Gate Charge (Qg) typ 70 nC —
封装 TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Power Dissition (PD) at TC = 25 °C 66 W —
工作温度范围 -55 °C to +150 °C (TJ) —
安装类型 Surface Mount Surface Mount
Technology HEXFET (advanced process, Gen 5) HEXFET (IR MOSFET fifth generation)
Avalanche Rated Yes (fully avalanche rated) —
Lead-Free / RoHS Status Lead-free, RoHS compliant (PBF suffix) Lead-Free, RoHS Compliant
MSL 等级 [DATA_NEEDED: MSL rating] —
RDS(on) Test Conditions VGS = -10 V, ID = -7.0 A —
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25C — 9.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD) at TC=25C — 48 W
Static Drain-to-Source On-Resistance (RDS(on)) max — 210 milliohms at VGS=10V
Gate-to-Source Threshold Voltage (VGS(th)) — 2 V to 4 V typical
Total Gate Charge (Qg) typical — 16.7 nC
Gate-to-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-to-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
工作结温范围 — -55C to +175C
Channel Type — N-Channel Enhancement Mode
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS]
Thermal Resistance Junction-to-Case (RthJC) max — [DATA_NEEDED: RthJC]

数据手册与资源

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