IRFR5410TRPBF vs IRFR120NTRPBF Comparação
Comparação detalhada lado a lado de IRFR5410TRPBF por Infineon e IRFR120NTRPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRFR5410TRPBF | IRFR120NTRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,71 | $0,26 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TC = 25 °C | -13 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | 205 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) typ | 70 nC | — |
| Encapsulamento | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Power Dissition (PD) at TC = 25 °C | 66 W | — |
| Faixa de temperatura de operação | -55 °C to +150 °C (TJ) | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Technology | HEXFET (advanced process, Gen 5) | HEXFET (IR MOSFET fifth generation) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | Lead-Free, RoHS Compliant |
| Nível MSL | [DATA_NEEDED: MSL rating] | — |
| RDS(on) Test Conditions | VGS = -10 V, ID = -7.0 A | — |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 9.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) at TC=25C | — | 48 W |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 210 milliohms at VGS=10V |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | 2 V to 4 V typical |
| Total Gate Charge (Qg) typical | — | 16.7 nC |
| Gate-to-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-to-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Faixa de temperatura de junção de operação | — | -55C to +175C |
| Channel Type | — | N-Channel Enhancement Mode |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS] |
| Thermal Resistance Junction-to-Case (RthJC) max | — | [DATA_NEEDED: RthJC] |