IRFR5410TRPBF vs IRFR120NTRPBF 비교

다음의 상세 나란히 비교: IRFR5410TRPBF 제조: Infineon 및 IRFR120NTRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFR5410TRPBF IRFR120NTRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.71 $0.26
Polarity P-Channel —
Drain-Source Voltage (VDS) -100 V —
Continuous Drain Current (ID) at TC = 25 °C -13 A —
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V 205 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Total Gate Charge (Qg) typ 70 nC —
패키지 TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Power Dissition (PD) at TC = 25 °C 66 W —
동작 온도 범위 -55 °C to +150 °C (TJ) —
실장 유형 Surface Mount Surface Mount
Technology HEXFET (advanced process, Gen 5) HEXFET (IR MOSFET fifth generation)
Avalanche Rated Yes (fully avalanche rated) —
Lead-Free / RoHS Status Lead-free, RoHS compliant (PBF suffix) Lead-Free, RoHS Compliant
MSL 레벨 [DATA_NEEDED: MSL rating] —
RDS(on) Test Conditions VGS = -10 V, ID = -7.0 A —
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25C — 9.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD) at TC=25C — 48 W
Static Drain-to-Source On-Resistance (RDS(on)) max — 210 milliohms at VGS=10V
Gate-to-Source Threshold Voltage (VGS(th)) — 2 V to 4 V typical
Total Gate Charge (Qg) typical — 16.7 nC
Gate-to-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-to-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
동작 접합 온도 범위 — -55C to +175C
Channel Type — N-Channel Enhancement Mode
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS]
Thermal Resistance Junction-to-Case (RthJC) max — [DATA_NEEDED: RthJC]

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청