IRFS4227TRLPBF vs IPT022N10NF2SATMA1 比較
詳細な並列比較: IRFS4227TRLPBF メーカー: Infineon および IPT022N10NF2SATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFS4227TRLPBF | IPT022N10NF2SATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2.38 | $0.99 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) @ Tc = 25C | 62 A | — |
| Maximum Power Dissipation (PD) @ Tc = 25C | 330 W | — |
| On-Resistance RDS(on) max @ VGS = 10V | 26 mOhm | — |
| Total Gate Charge (Qg) | 70 nC | [DATA_NEEDED: Qg typical value] |
| Gate-to-Source Voltage (VGS) max | ±30 V | — |
| Configuration | Single with built-in diode | — |
| Case Connection | DRAIN | — |
| Technology | HEXFET, IR MOSFET | Trench MOSFET |
| パッケージ | D2PAK (TO-263), surface mount | PG-HSOF-8-10 (8 leads + tab) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -40C to +150C (TJ) | -55C to +175C |
| MSLレベル | 1 (unlimited) | — |
| RoHS ステータス | Compliant | Compliant |
| Key Application | PDP Sustain / Energy Recovery Switch | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | StrongIRFET 2 |
| Drain-Source Voltage (V(BR)DSS) | — | 100 V |
| Continuous Drain Current (Id) at Ta | — | 29 A |
| Continuous Drain Current (Id) at Tc | — | 236 A |
| Typical RDS(on) at VGS=10V | — | 2.2 mΩ |
| Power Dissipation at Ta | — | 3.8 W |
| Power Dissipation at Tc | — | 250 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |