IRFS4227TRLPBF vs IPT022N10NF2SATMA1 Vergleich
Detaillierter Direktvergleich von IRFS4227TRLPBF von Infineon und IPT022N10NF2SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPT022N10NF2SATMA1 - 100V 2.2mΩ StrongIRFET 2 N-MOSFET | Infineon
IPT022N10NF2SATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IRFS4227TRLPBF | IPT022N10NF2SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,38 | $0,99 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) @ Tc = 25C | 62 A | — |
| Maximum Power Dissipation (PD) @ Tc = 25C | 330 W | — |
| On-Resistance RDS(on) max @ VGS = 10V | 26 mOhm | — |
| Total Gate Charge (Qg) | 70 nC | [DATA_NEEDED: Qg typical value] |
| Gate-to-Source Voltage (VGS) max | ±30 V | — |
| Configuration | Single with built-in diode | — |
| Case Connection | DRAIN | — |
| Technology | HEXFET, IR MOSFET | Trench MOSFET |
| Gehäuse | D2PAK (TO-263), surface mount | PG-HSOF-8-10 (8 leads + tab) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -40C to +150C (TJ) | -55C to +175C |
| MSL-Level | 1 (unlimited) | — |
| RoHS-Status | Compliant | Compliant |
| Key Application | PDP Sustain / Energy Recovery Switch | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | StrongIRFET 2 |
| Drain-Source Voltage (V(BR)DSS) | — | 100 V |
| Continuous Drain Current (Id) at Ta | — | 29 A |
| Continuous Drain Current (Id) at Tc | — | 236 A |
| Typical RDS(on) at VGS=10V | — | 2.2 mΩ |
| Power Dissipation at Ta | — | 3.8 W |
| Power Dissipation at Tc | — | 250 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |