IRLH5030TRPBF vs IRF7416TRPBF 比較
詳細な並列比較: IRLH5030TRPBF メーカー: Infineon および IRF7416TRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRLH5030TRPBF | IRF7416TRPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.15 | $0.32 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRLH5030TRPBF | — |
| FET Type | N-Channel | P-Channel |
| Technology | IR MOSFET (HEXFET) | HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 100 V | -30 V |
| Continuous Drain Current (ID) at TA=25C | 13 A | -10 A |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| On-Resistance RDS(on) max at VGS=10V | 9 mOhm | — |
| Total Gate Charge (Qg) | 44 nC | 61 nC |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | — |
| Power Dissipation at TA=25C | 3.6 W | — |
| Power Dissipation at TC=25C | 156 W | — |
| Thermal Resistance to PCB (RthJC) | 0.8 C/W | — |
| パッケージ | PQFN-8 (SuperSO8 5x6 mm) | 8-SO (SOIC-8) |
| Profile Height | ≤ 0.9 mm | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Qualification | JEDEC standard | — |
| Rg Tested | 100% | — |
| RoHS Compliance | Compliant (Lead-free, Bromide-free, Halogen-free) | — |
| Industry-Standard Pinout | Yes | — |
| Pulsed Drain Current (IDM) | — | -50 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 20 mOhm at VGS = -10 V |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | -1 V to -3 V |
| Power Dissipation (PD) max at TA=25C | — | 2.5 W |
| Thermal Resistance, Junction-to-Ambient (RthJA) | — | 50 C/W |
| 動作接合温度範囲 | — | -55 C to +150 C |
| RoHS ステータス | — | Compliant |
| Lead-Free | — | Yes |
| MSLレベル | — | 1 (unlimited) |