IRLH5030TRPBF vs IRF7416TRPBF 对比
详细并排对比 IRLH5030TRPBF 出自 Infineon 和 IRF7416TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLH5030TRPBF | IRF7416TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.15 | $0.32 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRLH5030TRPBF | — |
| FET Type | N-Channel | P-Channel |
| Technology | IR MOSFET (HEXFET) | HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 100 V | -30 V |
| Continuous Drain Current (ID) at TA=25C | 13 A | -10 A |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| On-Resistance RDS(on) max at VGS=10V | 9 mOhm | — |
| Total Gate Charge (Qg) | 44 nC | 61 nC |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | — |
| Power Dissipation at TA=25C | 3.6 W | — |
| Power Dissipation at TC=25C | 156 W | — |
| Thermal Resistance to PCB (RthJC) | 0.8 C/W | — |
| 封装 | PQFN-8 (SuperSO8 5x6 mm) | 8-SO (SOIC-8) |
| Profile Height | ≤ 0.9 mm | — |
| 安装类型 | Surface Mount | Surface Mount |
| Qualification | JEDEC standard | — |
| Rg Tested | 100% | — |
| RoHS Compliance | Compliant (Lead-free, Bromide-free, Halogen-free) | — |
| Industry-Standard Pinout | Yes | — |
| Pulsed Drain Current (IDM) | — | -50 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 20 mOhm at VGS = -10 V |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | -1 V to -3 V |
| Power Dissipation (PD) max at TA=25C | — | 2.5 W |
| Thermal Resistance, Junction-to-Ambient (RthJA) | — | 50 C/W |
| 工作结温范围 | — | -55 C to +150 C |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |
| MSL 等级 | — | 1 (unlimited) |