ISC0703NLSATMA1 vs ISC011N03L5SATMA1 比較
詳細な並列比較: ISC0703NLSATMA1 メーカー: Infineon および ISC011N03L5SATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | ISC0703NLSATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.51 | $0.47 |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 13 A | — |
| Continuous Drain Current (ID) at Tc=25C | 57 A | — |
| Power Dissipation (PD) at Ta=25C | 3 W | — |
| Power Dissipation (PD) at Tc=25C | 44 W | — |
| Technology | Trench MOSFET (OptiMOS family) | OptiMOS 5 trench MOSFET |
| パッケージ | PG-TDSON-8 (5x6 mm) | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55C to +150C (junction) | — |
| Standard Package Quantity | 5,000 (reel) | — |
| MSLレベル | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| RoHS ステータス | Compliant | Compliant |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS rating] | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 / StrongIRFET 30 V |
| トランジスタタイプ | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta=25C | — | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 100 A |
| Power Dissipation (PD) @ Ta=25C | — | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | — | 96 W |
| 動作温度 | — | -55 C to +175 C (TJ) |
| Gate Drive | — | Logic-level compatible |