ISC0703NLSATMA1 vs ISC011N03L5SATMA1 Vergleich
Detaillierter Direktvergleich von ISC0703NLSATMA1 von Infineon und ISC011N03L5SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC0703NLSATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,51 | $0,47 |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 13 A | — |
| Continuous Drain Current (ID) at Tc=25C | 57 A | — |
| Power Dissipation (PD) at Ta=25C | 3 W | — |
| Power Dissipation (PD) at Tc=25C | 44 W | — |
| Technology | Trench MOSFET (OptiMOS family) | OptiMOS 5 trench MOSFET |
| Gehäuse | PG-TDSON-8 (5x6 mm) | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) | — |
| Standard Package Quantity | 5,000 (reel) | — |
| MSL-Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS rating] | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 / StrongIRFET 30 V |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta=25C | — | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 100 A |
| Power Dissipation (PD) @ Ta=25C | — | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | — | 96 W |
| Betriebstemperatur | — | -55 C to +175 C (TJ) |
| Gate Drive | — | Logic-level compatible |