K4S641632K-UC75 vs K4S641632H-UC75 比較
詳細な並列比較: K4S641632K-UC75 メーカー: Samsung Electro-Mechanics および K4S641632H-UC75 メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Samsung Electro-Mechanics
K4S641632K-UC75 - 64Mb SDRAM 4Mx16 3.3V 54-TSOP II | Samsung
K4S641632K-UC75 ✓ 生産中Samsung Electronics
K4S641632H-UC75 - 64Mb H-die SDRAM 1M x 16 x 4 Banks | Samsung
K4S641632H-UC75 Obsolete仕様比較
| パラメータ | K4S641632K-UC75 | K4S641632H-UC75 |
|---|---|---|
| ブランド | Samsung Electro-Mechanics | Samsung Electronics |
| カテゴリ | Memory ICs | Memory ICs |
| ライフサイクル状態 | 有効 | Obsolete |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.92 | $2.85 |
| メモリタイプ | Synchronous DRAM (SDR SDRAM) | SDRAM (Synchronous DRAM) |
| Density | 64 Mbit (67,108,864 bits) | 64 Mb (67,108,864 bits) |
| メモリ構成 | 4 banks x 1,048,576 words x 16 bits (4Mx16) | 1M x 16 bits x 4 Banks |
| Supply Voltage (VDD/VDDQ) | 3.3 V +/- 0.3 V | 3.3 V |
| Speed Grade | UC75 (133 MHz, CAS Latency 3, tCK = 7.5 ns) | — |
| 最大クロック周波数 | 133 MHz | — |
| CAS Latency (CL) | 2 or 3 (programmable) | — |
| Burst Length | 1, 2, 4, 8 or full page | 1, 2, 4, 8, Full Page |
| Refresh Cycles | 4096 (64 ms refresh interval) | — |
| Number of Banks | 4 | — |
| Address Multiplexing | Row: 12 bits, Column: 8 bits | Yes (RAS#, CAS# controlled) |
| インターフェース | 16-bit data bus, LVTTL-compatible | LVCMOS |
| 動作温度 | 0 C to +70 C (Commercial) | 0C to +70C (Commercial) |
| パッケージ | 54-pin TSOP-II | — |
| Package Outline | 10.16 mm x 22.22 mm, 0.8 mm pitch | — |
| 実装タイプ | Surface Mount (Tape & Reel) | — |
| Process Technology | Samsung high-performance CMOS | Samsung high-performance CMOS |
| RoHS ステータス | Compliant | — |
| Clock Frequency | — | 133 MHz |
| Max Operating Current | — | 135 mA |
| Package Type | — | 54-pin TSOP-II |
| Lead Finish | — | Pb-Free (RoHS compliant) |
| Bank Architecture | — | 4 Banks |
| Burst Type | — | Sequential or Interleave |
| Refresh | — | Auto-Refresh and Self-Refresh |
| Data Width | — | 16 bits |