K4S641632K-UC75 vs K4S641632H-UC75 对比
详细并排对比 K4S641632K-UC75 出自 Samsung Electro-Mechanics 和 K4S641632H-UC75 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electro-Mechanics
K4S641632K-UC75 - 64Mb SDRAM 4Mx16 3.3V 54-TSOP II | Samsung
K4S641632K-UC75 ✓ 量产中Samsung Electronics
K4S641632H-UC75 - 64Mb H-die SDRAM 1M x 16 x 4 Banks | Samsung
K4S641632H-UC75 Obsolete规格对比
| 参数 | K4S641632K-UC75 | K4S641632H-UC75 |
|---|---|---|
| 品牌 | Samsung Electro-Mechanics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.92 | $2.85 |
| 存储器类型 | Synchronous DRAM (SDR SDRAM) | SDRAM (Synchronous DRAM) |
| Density | 64 Mbit (67,108,864 bits) | 64 Mb (67,108,864 bits) |
| 存储组织 | 4 banks x 1,048,576 words x 16 bits (4Mx16) | 1M x 16 bits x 4 Banks |
| Supply Voltage (VDD/VDDQ) | 3.3 V +/- 0.3 V | 3.3 V |
| Speed Grade | UC75 (133 MHz, CAS Latency 3, tCK = 7.5 ns) | — |
| 最大时钟频率 | 133 MHz | — |
| CAS Latency (CL) | 2 or 3 (programmable) | — |
| Burst Length | 1, 2, 4, 8 or full page | 1, 2, 4, 8, Full Page |
| Refresh Cycles | 4096 (64 ms refresh interval) | — |
| Number of Banks | 4 | — |
| Address Multiplexing | Row: 12 bits, Column: 8 bits | Yes (RAS#, CAS# controlled) |
| 接口 | 16-bit data bus, LVTTL-compatible | LVCMOS |
| 工作温度 | 0 C to +70 C (Commercial) | 0C to +70C (Commercial) |
| 封装 | 54-pin TSOP-II | — |
| Package Outline | 10.16 mm x 22.22 mm, 0.8 mm pitch | — |
| 安装类型 | Surface Mount (Tape & Reel) | — |
| Process Technology | Samsung high-performance CMOS | Samsung high-performance CMOS |
| RoHS 状态 | Compliant | — |
| Clock Frequency | — | 133 MHz |
| Max Operating Current | — | 135 mA |
| Package Type | — | 54-pin TSOP-II |
| Lead Finish | — | Pb-Free (RoHS compliant) |
| Bank Architecture | — | 4 Banks |
| Burst Type | — | Sequential or Interleave |
| Refresh | — | Auto-Refresh and Self-Refresh |
| Data Width | — | 16 bits |