K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung
部品番号: K9DVGY8J5M ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1 | $1.00 |
| 10 | $1 | $10.00 |
| 100 | $1 | $100.00 |
| 500 | $1 | $500.00 |
| 1,000 | $1 | $1,000.00 |
K9DVGY8J5M 概要
Raw NAND flash is a non-volatile memory category in which the memory array, page buffers, and command interface are exposed directly to a host NAND controller. Unlike managed NAND (eMMC, UFS, or NVMe SSDs), a raw NAND device such as the K9DVGY8J5M requires the host system to implement error correction code (ECC), wear leveling, bad-block management, and flash translation layers. Within the storage hierarchy, NAND flash sits above the silicon die level and below storage systems: NAND die -> flash package -> storage module -> SSD/embedded storage.
The K9-series family from Samsung is characterized by high page densities enabled by 3D V-NAND stacking, ONFI-style asynchronous and toggle-mode DDR interfaces on related family members, and multi-plane architectures that boost sequential and random throughput when driven by capable controllers. Devices in this class are typically specified for program page and block erase operations with defined cycle counts (program/erase endurance) and data retention targets; exact figures for this specific MPN require the manufacturer datasheet.
Typical applications for raw V-NAND components of this type include client and enterprise SSD builds, eMMC and UFS embedded storage assemblies, industrial-grade storage cards, and storage modules for data center appliances. Because the K9DVGY8J5M is a component-level part, it is generally procured by storage OEMs, module houses, and repair/refurbishment channels rather than by individual design engineers.
A key design consideration for any raw TLC NAND integration is ECC strength: TLC cells have tighter voltage margins than MLC or SLC, so controllers must implement strong BCH or LDPC error correction plus a defined spare-area budget per block. Verify the page size, block size, plane count, and tR/tPROG timings directly against the Samsung datasheet before qualifying a controller.
This page synthesizes verified distributor and database listings, drop-in family alternatives from the Samsung K9 catalog, and practical design notes not found in the manufacturer datasheet.
ドロップイン代替品: K9DVGY8J5M — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: K9DVGY8J5M （同一形状・フットプリント） — 相違点: Memory Type, Mounting Type, Interface, NAND Technology, Package Type.
クイック比較ツール — 並列比較する代替部品を選択:
K9DVGB8U5M
✅ ドロップイン✓ 在庫あり
$3.05 / 個
データシートを見る →K9PRGY8S7M
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9PKGY8S7M-CCK0
✅ ドロップイン✓ 在庫あり
$9.4 / 個
データシートを見る →K9HQGY8S5M
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9ADGD8S0A
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9DVGY8J5M 最大定格＆電気的特性
| Manufacturer | Samsung Electronics |
| Product Type | Raw NAND Flash Memory |
| NAND Technology | Samsung V-NAND (3D TLC) |
| Flash ID | EC519A3F8CCB |
| 実装タイプ | Surface Mount |
K9DVGY8J5M standard ピン配置ガイド
K9DVGY8J5M (standard パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: K9DVGY8J5M.
詳細は データシート をご参照ください。
主な用途
K9DVGY8J5M の用途: 6 件s: Client and Enterprise SSD Assemblies, Embedded Storage Modules (eMMC/UFS Assembly), Industrial Storage Cards and Removable Media, Data Center Storage Appliances, SSD Repair, Refurbishment, and Data Recovery, Consumer Electronics Storage (TVs, Set-Top Boxes, Routers).
Client and Enterprise SSD Assemblies
The K9DVGY8J5M serves as raw TLC V-NAND storage in client and enterprise SSD builds, where multiple dies are stacked and mounted onto an SSD PCB paired with an NVMe or SATA controller. Samsung V-NAND TLC technology provides the multi-terabyte capacity and multi-plane parallelism that SSD controllers exploit for high sequential throughput and IOPS. In this role the die's Flash ID (EC519A3F8CCB) is read at power-up so the controller loads matching timing, geometry, and LDPC ECC parameters. Designers should budget spare area for TLC ECC overhead and implement SLC caching to absorb write bursts while protecting TLC endurance.
おすすめ
Embedded Storage Modules (eMMC/UFS Assembly)
Raw V-NAND dies such as the K9DVGY8J5M are mounted inside eMMC and UFS managed-storage packages, where a Samsung or third-party controller adds the flash translation layer, wear leveling, and ECC before presenting a managed interface. This die-level integration lets module houses select density and cost points while reusing qualified controller firmware. The key engineering task is verifying that the module controller's Flash ID table includes EC519A3F8CCB and that page/block geometry matches the firmware's expected layout. TLC endurance characteristics must align with the module's target application class (consumer, industrial, or automotive).
おすすめ
Industrial Storage Cards and Removable Media
Industrial-grade SD, CFast, and proprietary storage-card builds use raw TLC NAND dies like the K9DVGY8J5M paired with card controllers that implement static wear leveling, power-loss protection, and strong ECC. Samsung V-NAND's stacked-cell architecture delivers high density within the limited PCB area of a card, while the die's toggle-mode interface supports the throughput industrial logging and data-recorder applications demand. Designers should derate TLC endurance for continuous-write industrial profiles, configure card controllers with the correct EC519A3F8CCB Flash ID entry, and validate retention across the full industrial temperature profile.
おすすめ
Data Center Storage Appliances
Storage appliances and JBOD systems integrate arrays of SSDs built on raw V-NAND dies such as the K9DVGY8J5M. At data center scale, per-gigabyte cost and supply continuity of the underlying NAND drive BOM decisions, making Samsung's K9-family die an anchor component. The die's multi-plane architecture allows controllers to parallelize reads and writes across planes, lifting random IOPS for virtualization and database workloads. Procurement teams should secure the Samsung NDA datasheet for timing and endurance data and dual-source qualification with K9DVGB8U5M to hedge against NAND market allocation cycles.
おすすめ
SSD Repair, Refurbishment, and Data Recovery
Independent repair and refurbishment channels use K9-series raw NAND dies, including the K9DVGY8J5M, to replace failed or worn flash on SSD PCBs and storage modules during component-level repair. Successful swaps require matching the Flash ID expectations of the resident controller firmware, migrating or rebuilding the bad-block and wear-leveling metadata, and validating the replacement die's geometry. The FlashInfo-verified Flash ID EC519A3F8CCB is the primary reference for confirming a genuine Samsung die before soldering, making ID verification the first step in any board-level NAND replacement workflow.
おすすめ
Consumer Electronics Storage (TVs, Set-Top Boxes, Routers)
Consumer electronics platforms that record video, cache content, or store firmware use modules assembled from raw TLC V-NAND dies like the K9DVGY8J5M. The die's TLC density keeps per-unit BOM cost low while providing gigabytes of writable storage for DVR functions and app caching. Because these hosts typically use an integrated storage controller with a fixed Flash ID table, designers must confirm EC519A3F8CCB support or select a K9-family die already covered by the SoC vendor's qualified NAND list. TLC endurance is adequate for consumer duty cycles when controllers apply SLC caching and background garbage collection.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: K9DVGY8J5M — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | K9DVGB8U5M | K9PRGY8S7M | K9PKGY8S7M-CCK0 |
|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| NAND Technology | Samsung V-NAND TLC | Samsung V-NAND TLC | Samsung V-NAND TLC | Samsung V-NAND TLC |
主な差別化要因
- Verified Flash ID provenance （vs K9DVGB8U5M)
- Same-family controller compatibility （vs K9PRGY8S7M)
- 3D V-NAND TLC density economics （vs K9HQGY8S5M)
設計ノート
Raw toggle-DDR NAND interfaces are source-synchronous buses: match trace lengths within the controller's specified skew window for DQ, DQS/RE, and CLE/ALE groups, and route CE/R signals away from DQ switching to limit crosstalk. Keep stubs under the package's transmission-line limit and terminate per the controller reference design. When stacking multiple K9-family dies on one bus, verify the shared-bus capacitive load still meets the datasheet slew-rate requirements at the target mode speed.
Decouple VCC and VCCQ independently at each NAND die: place a 100 nF ceramic capacitor within 2 mm of each supply pin plus bulk capacitance of at least 10 uF per die group. TLC program operations draw transient current peaks on VCCQ; insufficient decoupling shows up as program-disturb or ECC-fail symptoms that are difficult to isolate from firmware issues. Separate the NAND rails from switching-regulator output ripple with a ferrite bead if a shared DC-DC rail is unavoidable.
The most frequent raw NAND integration failure is a Flash ID mismatch: the controller reads the ID bytes (EC519A3F8CCB for this part) at init and must have a matching geometry, timing, and ECC profile in its firmware table, or the device fails to enumerate or corrupts data. Always confirm the exact Flash ID with the physical die - ordering-code suffixes within the K9 family encode different organizations. Also verify the substitution part's package pinout against the Samsung datasheet before assuming drop-in compatibility.
コンプライアンス情報
Compliance data was not present in the verified public web data for this MPN; Samsung raw NAND components are generally RoHS-compliant but this must be confirmed from official Samsung documentation.
