K9LCG08U1M - 64Gbit MLC NAND Flash | Samsung | SSD Storage
部品番号: K9LCG08U1M ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $13.5 | $13.50 |
| 10 | $12.95 | $129.50 |
| 100 | $12.6 | $1,260.00 |
| 500 | $12.2 | $6,100.00 |
| 1,000 | $11.85 | $11,850.00 |
K9LCG08U1M 概要
NAND flash is a type of non-volatile storage technology that retains data without power. Within the memory hierarchy, NAND flash sits below DRAM in speed but offers far higher density and lower cost per bit, making it the dominant technology for solid-state drives, eMMC storage, USB drives, memory cards, and embedded file systems. Samsung is the world's leading NAND flash manufacturer, and the K9LCG08U1M belongs to its high-density MLC NAND family targeting large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility, as described in supplier documentation.
Key characteristics include the 64 Gbit (8 GB) per-die MLC organization, an asynchronous NAND interface with standard command/data/address multiplexed I/O, and a BGA package suited to compact board designs. MLC technology stores two bits per cell, doubling density versus SLC at the cost of higher program/erase endurance requirements being placed on the system controller, which must implement ECC, wear leveling, and bad-block management.
Architecturally, the device uses Samsung's MLC cell array with page-based read and program operations and block-based erase, accessed through the standard NAND command set. Data integrity depends on the host controller applying error-correcting code appropriate to MLC bit-error rates, typically BCH or LDPC schemes implemented in the companion controller.
Typical applications include solid-state storage files, embedded industrial storage modules, set-top boxes, and portable devices requiring high-density non-volatile memory. Designers should verify the full speed-grade suffix (LCB0/LCB00) when sourcing, as voltage and timing parameters vary by ordering code.
A key design consideration is that raw NAND requires a controller: the K9LCG08U1M cannot be used standalone, and MLC endurance demands robust ECC and wear-leveling firmware.
This page synthesizes distributor availability data, ordering-code variants, and drop-in family alternatives not consolidated in any single datasheet source.
ドロップイン代替品: K9LCG08U1M — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: K9LCG08U1M （同一形状・フットプリント） — 相違点: Package, Organization, Cell Type, Memory Type, Density.
クイック比較ツール — 並列比較する代替部品を選択:
K9HCG08U1M
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9XXG08U0M
✅ ドロップイン✓ 在庫あり
$5.6 / 個
データシートを見る →K9XXG08UXM
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9HQGY8S5M
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9F2808Q0B
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9LCG08U1M 仕様
| メモリタイプ | NAND Flash, MLC |
| Density | 64 Gbit (8 GB) |
| メモリ構成 | x8 I/O |
| インターフェース | Asynchronous multiplexed NAND I/O |
| Cell Type | MLC (2 bits per cell) |
| パッケージ | BGA |
| 実装タイプ | Surface Mount |
| RoHS ステータス | unknown |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |
K9LCG08U1M bga ピン配置ガイド
K9LCG08U1M (bga パッケージ) のピン配置。 ピン番号、機能、接続図はメーカーのデータシートで定義されています。正確なフットプリントとはんだ付けのガイドラインについては、データシートを参照してください。
詳細なピン配置データはありません: K9LCG08U1M.
詳細は データシート をご参照ください。
主な用途
K9LCG08U1M の用途: 6 件s: Solid State File Storage, Industrial Embedded Storage, Set-Top Boxes and Consumer Electronics, Portable and Battery-Powered Devices, Storage Module and eMMC Subsystem Design, Data Logging and Event Recorders.
Solid State File Storage
The K9LCG08U1M's 64 Gbit MLC density in a compact BGA makes it a fit for solid state file storage systems where large non-volatile capacity per package is the priority. Supplier documentation explicitly positions it as an optimum solution for such applications. In a typical SSD or storage-module architecture, multiple NAND packages connect to a controller over the multiplexed NAND bus, with the controller handling BCH or LDPC ECC, interleaved multi-die operation, and wear leveling to manage MLC endurance. Because MLC stores two bits per cell, the cost per gigabyte is roughly half that of SLC, but the controller must budget for higher bit-error rates and longer program times. Designers should parallelize several packages to increase effective bandwidth beyond a single die's read throughput.
おすすめ
Industrial Embedded Storage
Industrial controllers, gateways, and data loggers need reliable non-volatile code and data storage, and the K9LCG08U1M provides 8 GB of MLC NAND in a surface-mount BGA suitable for compact industrial boards. In these designs, the NAND typically stores the file system, firmware images, and logging data behind a controller implementing power-fail protection, bad-block remapping, and wear leveling. The MLC cell type keeps cost per bit low, which matters in cost-sensitive industrial volumes, but designers must verify the ordering code's temperature range in the Samsung datasheet and select a wide-temperature suffix for harsh environments. Decoupling capacitors on the NAND supply rail and clean power sequencing during brownout events are essential to prevent data corruption.
おすすめ
Set-Top Boxes and Consumer Electronics
Set-top boxes, smart TVs, and networked consumer devices use high-density NAND like the K9LCG08U1M for channel databases, application storage, and DVR buffering. The 64 Gbit MLC device offers the capacity these platforms need at consumer price points, and its standard asynchronous NAND interface connects directly to mainstream SoCs with built-in NAND controllers and hardware ECC. The controller's LDPC or BCH engine handles MLC error rates, while firmware wear leveling sustains the write endurance demanded by DVR-style recording workloads. The BGA package supports the compact two-layer to four-layer PCB constructions typical of consumer hardware. Designers should confirm the speed-grade suffix timing matches the SoC NAND controller's supported interface timing modes before layout.
おすすめ
Portable and Battery-Powered Devices
Portable applications requiring non-volatility - handheld terminals, test instruments, and mobile accessories - benefit from the K9LCG08U1M's combination of high density and low per-bit cost. Supplier listings describe the device as an optimum solution for portable applications requiring non-volatility. In battery-powered designs, the NAND's standby current draw is negligible relative to the system, and the asynchronous interface avoids the power cost of a high-speed memory bus. The BGA footprint keeps board area small for thin form factors. Because MLC program operations take longer than SLC, firmware should buffer writes in RAM and batch them to reduce erase cycles, directly extending battery-adjacent storage lifetime and improving perceived responsiveness of the device.
おすすめ
Storage Module and eMMC Subsystem Design
Designers building storage modules - raw-NAND cards, industrial SD-like modules, or custom eMMC-class subsystems - can build around multiple K9LCG08U1M packages. Density denoted by Samsung's K9 nomenclature allows parallel dies for capacity aggregation: a controller exposing an SD, eMMC, or SATA front end manages four to eight NAND packages with interleaving to multiply bandwidth. The MLC architecture's endurance is handled through dynamic and static wear leveling plus over-provisioning, typically 7% or more of capacity. The identical command set across Samsung's K9 family lets one firmware image support multiple bill-of-material densities, simplifying product SKUs. Verify ball-map compatibility when mixing K9LCG08U1M with other family parts on the same PCB footprint.
おすすめ
Data Logging and Event Recorders
Event recorders, black-box loggers, and telemetry systems require storage that survives power loss and years of cyclic writing. The K9LCG08U1M's 8 GB MLC array supports extensive logging histories, and its non-volatile cells retain data without power indefinitely. A logging controller writes fixed-record blocks into NAND pages, using bad-block tables and wear leveling to spread erase cycles evenly; at moderate write rates this extends service life well beyond typical mission intervals. The multiplexed NAND interface needs only modest controller GPIO resources, suiting cost-sensitive recorder hardware. Because sudden power removal can corrupt an in-progress program operation, firmware must implement write-verify and journaling so that the last valid record is always recoverable.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: K9LCG08U1M — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | K9HCG08U1M | K9XXG08U0M | K9XXG08UXM | K9HQGY8S5M | K9F2808Q0B |
|---|---|---|---|---|---|---|
| Package | BGA | BGA | BGA | BGA | BGA | BGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Target Application | Solid state file storage, portable non-volatile storage | High-density solid state storage | Embedded NAND storage | Embedded NAND storage | High-density NAND generation | Legacy code/data storage |
| Lifecycle Status | Active (independent distributor stock) | Active | Active | Active | Active | Legacy |
主な差別化要因
- 64 Gbit MLC density balances cost and capacity （vs K9F2808Q0B)
- Same-family migration path within Samsung K9 catalog （vs K9HCG08U1M)
- MLC cost structure versus higher-density newer generations （vs K9HQGY8S5M)
設計ノート
Never operate the K9LCG08U1M without ECC. As MLC NAND, raw bit-error rates are substantially higher than SLC, and the Samsung datasheet assumes controller-managed error correction (BCH or LDPC) sized for the device's page size. Additionally, always build to the complete ordering code (LCB0, LCB00, or LCB) rather than the bare base MPN, because timing and voltage grades are encoded in the suffix. Ordering on the base MPN alone risks receiving a speed grade incompatible with your controller timing configuration.
The BGA package requires reflow soldering - hand soldering is not feasible. Follow the Samsung datasheet reflow profile limits and inspect solder joints with X-ray or AOI, since NAND BGAs hide voids beneath the die area. Place 100 nF ceramic decoupling capacitors within 2-3 mm of each supply ball, plus bulk 10 uF capacitance per package. Keep the multiplexed command/data/address bus traces length-matched where multiple NAND packages share the bus, and add series termination on long I/O lines to control ringing at fast read cycles.
Implement power-fail protection in the storage firmware: an interrupted MLC program operation can corrupt the target page, so design the system to detect brownout (via a supply supervisor), flush controller RAM buffers, and mark the interrupted block for later verification and remapping. Estimated: NAND program current is modest, but simultaneous program across multiple stacked dies can create transient load steps - size the bulk capacitance for the aggregate inrush of all dies programming in interleaved mode.
On shared NAND buses with multiple K9-family packages, ensure only the selected device drives I/O during read cycles; contention from an un-tri-stated device corrupts data. Verify that pull-up resistors on R/B (ready/busy) lines are sized so rise times meet your controller's timing budget when several devices share one R/B line in stacked configurations.
コンプライアンス情報
Compliance status not stated in the provided web data; obtain declarations from Samsung or the stocking distributor.
