LMG3422R030RQZT vs LMG3522R030RQSR 比較
詳細な並列比較: LMG3422R030RQZT メーカー: Texas Instruments および LMG3522R030RQSR メーカー: Texas Instruments。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Texas Instruments
LMG3422R030RQZT - 600V 30mΩ GaN FET with Integrated Driver | TI
LMG3422R030RQZT ✓ 生産中Texas Instruments
LMG3522R030RQSR - 650V 30mΩ GaN FET with Integrated Driver | TI
LMG3522R030RQSR ✓ 生産中仕様比較
| パラメータ | LMG3422R030RQZT | LMG3522R030RQSR |
|---|---|---|
| ブランド | Texas Instruments | Texas Instruments |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $8.10 | $8.16 |
| Drain-Source Voltage (VDS) | 600 V | 650 V |
| On-Resistance (RDS(on)) | 30 mΩ | — |
| Continuous Drain Current | 40 A | — |
| スイッチング周波数 | 2.2 MHz | [DATA_NEEDED: Maximum switching frequency] |
| Slew Rate | 20 V/ns to 150 V/ns | — |
| FET Hold-off | 200 V/ns | — |
| Integrated Driver | Yes | Yes (half-bridge) |
| Protection | Overcurrent, Overtemperature | — |
| Temperature Reporting | Yes | — |
| パッケージ | 54-VQFN (12x12 mm) | 52-VQFN (12x12 mm) Exposed Pad |
| 実装タイプ | Surface Mount | Surface Mount |
| Qualification | JEDEC JEP180 | — |
| Gate Drive Strength | Adjustable | — |
| 動作温度 | -40°C to +125°C | — |
| RoHS ステータス | Compliant | Compliant |
| RDS(on) (Typical) | — | 30 mΩ |
| Continuous Drain Current (ID) | — | 55 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: Pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: Gate-source voltage range] |
| Protection Features | — | Overcurrent, overtemperature, temperature reporting |
| 動作温度範囲 | — | [DATA_NEEDED: Operating temperature range] |
| Automotive Grade | — | Available (Q1 variant, AEC-Q100) |
| MSLレベル | — | [DATA_NEEDED: MSL level] |
| 熱抵抗、接合-周囲間 | — | [DATA_NEEDED: Thermal resistance] |