LMG3422R030RQZT - 600V 30mΩ GaN FET with Integrated Driver | TI
部品番号: LMG3422R030RQZT ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.25 | $112.50 |
| 100 | $10 | $1,000.00 |
| 500 | $9 | $4,500.00 |
| 1,000 | $8.1 | $8,100.00 |
LMG3422R030RQZT 概要
GaN FETs are a class of wide-bandgap power semiconductors that offer lower gate charge and faster switching than silicon MOSFETs, reducing switching losses and enabling higher power density. The LMG3422R030 integrates the driver and protection circuitry, simplifying design and improving reliability by minimizing parasitic inductance. This integration is part of a broader trend toward power management ICs that combine power stage and control for compact, efficient converters.
Key features include integrated overcurrent and overtemperature protection, a temperature reporting pin, and adjustable gate drive strength. The device supports a wide input voltage range and provides clean switching with minimal ringing, as highlighted in the datasheet. The low-inductance package and integrated driver enable higher switching SOA compared to discrete solutions.
The LMG3422R030 is ideal for applications such as server power supplies, telecom rectifiers, solar inverters, and electric vehicle onboard chargers, where high efficiency and power density are critical. Its 600-V rating and 30-mΩ RDS(on) make it suitable for totem-pole PFC, LLC converters, and other hard-switching topologies.
When designing with this device, ensure proper thermal management via the exposed pad and adequate PCB copper area. The integrated driver simplifies layout, but attention to gate drive loop and snubber design is recommended to minimize ringing. The device is available in tape and reel packaging, with pricing as of 2026-08-27.
ドロップイン代替品: LMG3422R030RQZT — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: LMG3422R030RQZT （同一形状・フットプリント） — 相違点: Drain-Source Voltage (VDS), Integrated Driver, Package.
クイック比較ツール — 並列比較する代替部品を選択:
LMG3422R030RQZR
✅ ドロップイン📋 参考代替品（カタログ未掲載）
LMG3422R050RQZT
✅ ドロップイン📋 参考代替品（カタログ未掲載）
LMG3522R030RQSR
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$8.16 / 個
データシートを見る →LMG3426R030
✅ ドロップイン📋 参考代替品（カタログ未掲載）
LMG3427R030
✅ ドロップイン📋 参考代替品（カタログ未掲載）
LMG3422R030RQZT 最大定格＆電気的特性
| Drain-Source Voltage (VDS) | 600 V |
| On-Resistance (RDS(on)) | 30 mΩ |
| Continuous Drain Current | 40 A |
| スイッチング周波数 | 2.2 MHz |
| Slew Rate | 20 V/ns to 150 V/ns |
| FET Hold-off | 200 V/ns |
| Integrated Driver | Yes |
| Protection | Overcurrent, Overtemperature |
| Temperature Reporting | Yes |
| パッケージ | 54-VQFN (12x12 mm) |
| 実装タイプ | Surface Mount |
| Qualification | JEDEC JEP180 |
| Gate Drive Strength | Adjustable |
| 動作温度 | -40°C to +125°C |
| RoHS ステータス | Compliant |
LMG3422R030RQZT ピン構成
| ピン 1 | VIN — Input supply for driver |
| ピン 2 | VDD — Gate driver supply |
| ピン 3 | PWM — PWM input |
| ピン 4 | EN — Enable pin |
| ピン 5 | FLT — Fault output |
| ピン 6 | TEMP — Temperature reporting |
| ピン 7 | GND — Ground |
| ピン 8 | SW — Switch node |
| ピン 9 | D — Drain of GaN FET |
| ピン 10 | S — Source of GaN FET |
安全動作領域
主な用途
LMG3422R030RQZT の用途: 6 件s: Server Power Supplies, Telecom Rectifiers, Solar Inverters, Electric Vehicle Onboard Chargers, Industrial Power Supplies, Data Center Power.
Server Power Supplies
The LMG3422R030's 600-V rating and 30-mΩ RDS(on) enable high-efficiency, high-density power conversion in server PSUs. Its integrated driver simplifies layout and reduces parasitic inductance, while the 2.2-MHz switching frequency allows smaller magnetics. The device's overcurrent and overtemperature protection ensure reliable operation in demanding data center environments.
おすすめ
Telecom Rectifiers
In telecom rectifiers, the LMG3422R030 provides high efficiency and power density, reducing cooling requirements. Its fast switching (up to 150 V/ns) minimizes switching losses, and the integrated driver reduces component count. The device's JEDEC JEP180 qualification ensures robustness in hard-switching topologies like totem-pole PFC.
おすすめ
Solar Inverters
The LMG3422R030 is ideal for solar inverters, where high efficiency and reliability are paramount. Its 600-V rating handles typical DC bus voltages, and the low RDS(on) reduces conduction losses. The integrated temperature reporting allows real-time thermal monitoring, enabling adaptive control to maximize energy harvest.
おすすめ
Electric Vehicle Onboard Chargers
In EV onboard chargers, the LMG3422R030's high switching frequency and low losses enable compact, efficient designs. The integrated driver reduces gate drive complexity, and the protection features enhance system safety. The device's wide operating temperature range (-40°C to +125°C) suits automotive environments.
おすすめ
Industrial Power Supplies
The LMG3422R030 is suitable for industrial power supplies requiring high efficiency and reliability. Its 600-V rating and 30-mΩ RDS(on) allow operation from 3-phase mains. The integrated driver and protection simplify design, while the 2.2-MHz switching frequency reduces transformer size, saving board space.
おすすめ
Data Center Power
For data center power distribution, the LMG3422R030 offers high efficiency and power density, reducing energy costs. Its fast switching and low losses enable compact designs, and the integrated temperature reporting aids in thermal management. The device's protection features ensure reliable operation in 24/7 environments.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: LMG3422R030RQZT — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | LMG3422R030RQZR | LMG3422R050RQZT | LMG3522R030RQSR |
|---|---|---|---|---|
| Package | 54-VQFN (12x12 mm) | 54-VQFN (12x12 mm) | 54-VQFN (12x12 mm) | 54-VQFN (12x12 mm) |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Drain-Source Voltage | 600 V | 600 V | 600 V | 600 V |
| On-Resistance | 30 mΩ | 30 mΩ | 50 mΩ | 30 mΩ |
| Continuous Drain Current | 40 A | 40 A | 40 A | 40 A |
| Switching Frequency | 2.2 MHz | 2.2 MHz | 2.2 MHz | 2.2 MHz |
| Integrated Driver | Yes | Yes | Yes | Yes |
| Protection | Overcurrent, Overtemperature | Overcurrent, Overtemperature | Overcurrent, Overtemperature | Overcurrent, Overtemperature |
主な差別化要因
- Integrated driver reduces component count and parasitic inductance （vs Discrete GaN FET + driver solutions)
- JEDEC JEP180 qualification for hard-switching topologies （vs LMG3422R050)
- Lower RDS(on) than LMG3422R050 （vs LMG3422R050)
設計ノート
The LMG3422R030 can dissipate significant power at high currents. Ensure adequate PCB copper area and thermal vias under the exposed pad to keep junction temperature within limits. For 40 A continuous operation, a heatsink or forced airflow may be required.
Minimize the gate drive loop and power loop inductance by placing the device close to the controller and using low-inductance layout techniques. The integrated driver reduces external components, but proper decoupling of VDD and VIN is essential for stable operation.
Do not exceed the absolute maximum ratings for VDS and current. Ensure the PWM input is properly level-shifted and has adequate dead-time to prevent shoot-through. The temperature reporting pin should be monitored for overtemperature conditions.
コンプライアンス情報
RoHS compliant per TI product page. Not AEC-Q100 qualified.
