LMG3522R030RQSR - 650V 30mΩ GaN FET with Integrated Driver | TI
部品番号: LMG3522R030RQSR ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $13.6 | $13.60 |
| 10 | $12.24 | $122.40 |
| 100 | $10.88 | $1,088.00 |
| 500 | $9.52 | $4,760.00 |
| 1,000 | $8.16 | $8,160.00 |
LMG3522R030RQSR 概要
GaN FETs are a class of wide-bandgap power semiconductors that offer significantly lower figure of merit (RDS(on) x Qg) compared to silicon MOSFETs, enabling higher switching frequencies and reduced switching losses. The LMG3522R030 integrates the gate driver, which simplifies layout and reduces parasitic inductance, a critical factor for high-speed switching. This integration also provides robust protection features including overcurrent protection, overtemperature protection, and temperature reporting via a digital output.
Key features include a 650-V drain-source voltage rating, 30-mΩ typical RDS(on), and a 55-A continuous current rating. The integrated driver supports both high-side and low-side switches, and the device includes an interlock function to prevent shoot-through. The VQFN-52 package offers low thermal resistance, and the exposed pad aids in heat dissipation. The device is available in both standard and automotive (Q1) grades, with the Q1 variant qualified to AEC-Q100.
Technically, the LMG3522R030 uses a GaN-on-Si process, which balances performance and cost. The integrated driver reduces external component count and minimizes gate-loop inductance, enabling faster switching transitions. The device supports a wide input voltage range and is designed for high-frequency operation, reducing magnetics size. The temperature reporting feature allows real-time monitoring, enhancing system reliability.
Typical applications include server power supplies, telecom rectifiers, solar inverters, and electric vehicle onboard chargers. The device's high efficiency and power density make it suitable for totem-pole PFC stages, where its low reverse recovery charge (Qrr) minimizes losses. In LLC converters, the integrated driver simplifies the half-bridge configuration.
When designing with this device, ensure proper PCB layout with short, low-inductance paths for the gate drive and power loops. Use a dedicated ground plane and place decoupling capacitors close to the VCC and BST pins. The thermal pad must be soldered to a copper pour for effective heat sinking.
ドロップイン代替品: LMG3522R030RQSR — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: LMG3522R030RQSR （同一形状・フットプリント） — 相違点: Drain-Source Voltage (VDS), Integrated Driver, Package.
クイック比較ツール — 並列比較する代替部品を選択:
LMG3522R030QRQSRQ1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
LMG3522R050RQSR
✅ ドロップイン📋 参考代替品（カタログ未掲載）
LMG3526R030RQSR
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
LMG3522R030QRQSTQ1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
LMG3522R030RQSR 最大定格＆電気的特性
| Drain-Source Voltage (VDS) | 650 V |
| RDS(on) (Typical) | 30 mΩ |
| Continuous Drain Current (ID) | 55 A |
| Integrated Driver | Yes (half-bridge) |
| Protection Features | Overcurrent, overtemperature, temperature reporting |
| パッケージ | 52-VQFN (12x12 mm) Exposed Pad |
| 実装タイプ | Surface Mount |
| Automotive Grade | Available (Q1 variant, AEC-Q100) |
| RoHS ステータス | Compliant |
LMG3522R030RQSR ピン構成
| ピン 1 | VCC — Power supply for internal driver |
| ピン 2 | BST — Bootstrap pin for high-side driver |
| ピン 3 | HB — High-side bridge output |
| ピン 4 | LB — Low-side bridge output |
| ピン 5 | GND — Ground |
| ピン 6 | PWM — PWM input for driver |
| ピン 7 | EN — Enable pin |
| ピン 8 | TEMP — Temperature reporting output |
| ピン 9 | OC — Overcurrent protection flag |
| ピン 10 | VIN — Input voltage sense |
| ピン 11 | PGND — Power ground |
| ピン 12 | EP — Exposed pad for thermal dissipation |
安全動作領域
主な用途
LMG3522R030RQSR の用途: 6 件s: Totem-Pole PFC, LLC Resonant Converter, Server Power Supply, Solar Inverter, Electric Vehicle Onboard Charger, Telecom Rectifier.
Totem-Pole PFC
The LMG3522R030's 650-V rating and 30-mΩ RDS(on) enable high-efficiency totem-pole PFC stages. Its integrated driver simplifies the half-bridge configuration, and the low Qrr of GaN reduces reverse recovery losses. Operating at high frequencies (100-200 kHz) allows smaller magnetics, improving power density. The device's overcurrent protection ensures robust operation in demanding AC-DC converters.
おすすめ
LLC Resonant Converter
In LLC converters, the LMG3522R030's integrated half-bridge driver reduces component count and layout parasitics. Its fast switching capability (up to 1 MHz) enables high-frequency operation, shrinking transformer size. The device's temperature reporting allows real-time thermal management, enhancing reliability in server and telecom power supplies. The 55-A current rating supports high-power outputs.
おすすめ
Server Power Supply
The LMG3522R030 is ideal for server power supplies requiring high efficiency and power density. Its 650-V rating suits 400-V bus architectures, and the 30-mΩ RDS(on) minimizes conduction losses. The integrated driver and protection features reduce external components, saving board space. The device's high switching frequency enables compact magnetics, meeting 80+ Titanium efficiency standards.
おすすめ
Solar Inverter
For solar inverters, the LMG3522R030's high efficiency and reliability are critical. Its 650-V rating handles typical DC bus voltages, and the low RDS(on) reduces losses in MPPT and inverter stages. The integrated driver simplifies design, and the temperature reporting aids in thermal management. The device's robustness under hard-switching conditions makes it suitable for harsh outdoor environments.
おすすめ
Electric Vehicle Onboard Charger
The LMG3522R030-Q1 automotive variant is designed for onboard chargers in EVs. Its AEC-Q100 qualification ensures reliability in automotive environments. The 650-V rating supports 400-V battery systems, and the 30-mΩ RDS(on) enables high-efficiency AC-DC conversion. The integrated driver and protection features reduce BOM cost and improve system robustness.
おすすめ
Telecom Rectifier
In telecom rectifiers, the LMG3522R030's high efficiency reduces cooling requirements and operating costs. Its 650-V rating is suitable for 3-phase rectification, and the low RDS(on) minimizes losses. The integrated driver simplifies the half-bridge topology, and the device's high switching frequency allows compact filter components. The temperature reporting feature enables predictive maintenance.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: LMG3522R030RQSR — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | LMG3522R030QRQSRQ1 | LMG3522R050RQSR | LMG3526R030RQSR |
|---|---|---|---|---|
| Package | 52-VQFN (12x12) | 52-VQFN (12x12) | 52-VQFN (12x12) | 52-VQFN (12x12) |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| VDS (V) | 650 | 650 | 650 | 650 |
| RDS(on) (mΩ) | 30 | 30 | 50 | 30 |
| Continuous Current (A) | 55 | 55 | 32 | 55 |
| Automotive Grade | No | Yes (AEC-Q100) | No | No |
| Zero Voltage Reporting | No | No | No | Yes |
主な差別化要因
- Lower RDS(on) than LMG3522R050 （vs LMG3522R050RQSR)
- Automotive grade option available （vs LMG3522R030RQSR (standard))
- Integrated driver simplifies design （vs Discrete GaN FET + driver solution)
設計ノート
For the LMG3522R030, minimize the gate drive loop inductance by placing the driver and GaN FET close together. Use a 4-layer PCB with a dedicated ground plane. Place 100-nF decoupling capacitors close to the VCC and BST pins. The exposed pad must be soldered to a large copper pour for thermal management.
The LMG3522R030 can dissipate significant power at high currents. Ensure adequate thermal vias under the exposed pad to transfer heat to the PCB. For 55-A operation, a heatsink or forced airflow may be required. Monitor the temperature reporting pin to prevent overtemperature shutdown.
Do not exceed the absolute maximum VDS of 650 V. Ensure proper dead-time control to prevent shoot-through in half-bridge configurations. The integrated driver requires a bootstrap capacitor for high-side operation; select a capacitor with low ESR and adequate voltage rating. Verify the PWM input logic levels match the driver's specifications.
コンプライアンス情報
RoHS compliant per TI product page. Automotive grade available in Q1 variant.
