LMG3422R030RQZT vs LMG3522R030RQSR 对比
详细并排对比 LMG3422R030RQZT 出自 Texas Instruments 和 LMG3522R030RQSR 出自 Texas Instruments。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Texas Instruments
LMG3422R030RQZT - 600V 30mΩ GaN FET with Integrated Driver | TI
LMG3422R030RQZT ✓ 量产中Texas Instruments
LMG3522R030RQSR - 650V 30mΩ GaN FET with Integrated Driver | TI
LMG3522R030RQSR ✓ 量产中规格对比
| 参数 | LMG3422R030RQZT | LMG3522R030RQSR |
|---|---|---|
| 品牌 | Texas Instruments | Texas Instruments |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.10 | $8.16 |
| Drain-Source Voltage (VDS) | 600 V | 650 V |
| On-Resistance (RDS(on)) | 30 mΩ | — |
| Continuous Drain Current | 40 A | — |
| 开关频率 | 2.2 MHz | [DATA_NEEDED: Maximum switching frequency] |
| Slew Rate | 20 V/ns to 150 V/ns | — |
| FET Hold-off | 200 V/ns | — |
| Integrated Driver | Yes | Yes (half-bridge) |
| Protection | Overcurrent, Overtemperature | — |
| Temperature Reporting | Yes | — |
| 封装 | 54-VQFN (12x12 mm) | 52-VQFN (12x12 mm) Exposed Pad |
| 安装类型 | Surface Mount | Surface Mount |
| Qualification | JEDEC JEP180 | — |
| Gate Drive Strength | Adjustable | — |
| 工作温度 | -40°C to +125°C | — |
| RoHS 状态 | Compliant | Compliant |
| RDS(on) (Typical) | — | 30 mΩ |
| Continuous Drain Current (ID) | — | 55 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: Pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: Gate-source voltage range] |
| Protection Features | — | Overcurrent, overtemperature, temperature reporting |
| 工作温度范围 | — | [DATA_NEEDED: Operating temperature range] |
| Automotive Grade | — | Available (Q1 variant, AEC-Q100) |
| MSL 等级 | — | [DATA_NEEDED: MSL level] |
| 热阻，结到环境 | — | [DATA_NEEDED: Thermal resistance] |