LMG3522R030RQSR vs LMG3422R030RQZT 比較
詳細な並列比較: LMG3522R030RQSR メーカー: Texas Instruments および LMG3422R030RQZT メーカー: Texas Instruments。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Texas Instruments
LMG3522R030RQSR - 650V 30mΩ GaN FET with Integrated Driver | TI
LMG3522R030RQSR ✓ 生産中Texas Instruments
LMG3422R030RQZT - 600V 30mΩ GaN FET with Integrated Driver | TI
LMG3422R030RQZT ✓ 生産中仕様比較
| パラメータ | LMG3522R030RQSR | LMG3422R030RQZT |
|---|---|---|
| ブランド | Texas Instruments | Texas Instruments |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $8.16 | $8.10 |
| Drain-Source Voltage (VDS) | 650 V | 600 V |
| RDS(on) (Typical) | 30 mΩ | — |
| Continuous Drain Current (ID) | 55 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: Pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: Gate-source voltage range] | — |
| Integrated Driver | Yes (half-bridge) | Yes |
| Protection Features | Overcurrent, overtemperature, temperature reporting | — |
| パッケージ | 52-VQFN (12x12 mm) Exposed Pad | 54-VQFN (12x12 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | [DATA_NEEDED: Operating temperature range] | — |
| Automotive Grade | Available (Q1 variant, AEC-Q100) | — |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | [DATA_NEEDED: MSL level] | — |
| 熱抵抗、接合-周囲間 | [DATA_NEEDED: Thermal resistance] | — |
| スイッチング周波数 | [DATA_NEEDED: Maximum switching frequency] | 2.2 MHz |
| On-Resistance (RDS(on)) | — | 30 mΩ |
| Continuous Drain Current | — | 40 A |
| Slew Rate | — | 20 V/ns to 150 V/ns |
| FET Hold-off | — | 200 V/ns |
| Protection | — | Overcurrent, Overtemperature |
| Temperature Reporting | — | Yes |
| Qualification | — | JEDEC JEP180 |
| Gate Drive Strength | — | Adjustable |
| 動作温度 | — | -40°C to +125°C |