LMG3522R030RQSR vs LMG3422R030RQZT 비교
다음의 상세 나란히 비교: LMG3522R030RQSR 제조: Texas Instruments 및 LMG3422R030RQZT 제조: Texas Instruments. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Texas Instruments
LMG3522R030RQSR - 650V 30mΩ GaN FET with Integrated Driver | TI
LMG3522R030RQSR ✓ 활성Texas Instruments
LMG3422R030RQZT - 600V 30mΩ GaN FET with Integrated Driver | TI
LMG3422R030RQZT ✓ 활성사양 비교
| 파라미터 | LMG3522R030RQSR | LMG3422R030RQZT |
|---|---|---|
| 브랜드 | Texas Instruments | Texas Instruments |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $8.16 | $8.10 |
| Drain-Source Voltage (VDS) | 650 V | 600 V |
| RDS(on) (Typical) | 30 mΩ | — |
| Continuous Drain Current (ID) | 55 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: Pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: Gate-source voltage range] | — |
| Integrated Driver | Yes (half-bridge) | Yes |
| Protection Features | Overcurrent, overtemperature, temperature reporting | — |
| 패키지 | 52-VQFN (12x12 mm) Exposed Pad | 54-VQFN (12x12 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | [DATA_NEEDED: Operating temperature range] | — |
| Automotive Grade | Available (Q1 variant, AEC-Q100) | — |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | [DATA_NEEDED: MSL level] | — |
| 열 저항, 접합-주변 | [DATA_NEEDED: Thermal resistance] | — |
| 스위칭 주파수 | [DATA_NEEDED: Maximum switching frequency] | 2.2 MHz |
| On-Resistance (RDS(on)) | — | 30 mΩ |
| Continuous Drain Current | — | 40 A |
| Slew Rate | — | 20 V/ns to 150 V/ns |
| FET Hold-off | — | 200 V/ns |
| Protection | — | Overcurrent, Overtemperature |
| Temperature Reporting | — | Yes |
| Qualification | — | JEDEC JEP180 |
| Gate Drive Strength | — | Adjustable |
| 동작 온도 | — | -40°C to +125°C |