MRF5S19060NBR1 vs MRF5S21045NBR1 比較
詳細な並列比較: MRF5S19060NBR1 メーカー: NXP Semiconductors および MRF5S21045NBR1 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | MRF5S19060NBR1 | MRF5S21045NBR1 |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | Obsolete |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $25.40 | $25.20 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP USA Inc. (formerly Freescale Semiconductor) |
| トランジスタタイプ | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Configuration | Dual Die (2 x N), Common Source | — |
| Frequency Band | 1930 MHz to 1990 MHz | 2110 MHz to 2170 MHz |
| Output Power (P1dB) | 60 W (CW/peak) | — |
| Output Power (Average) | 12 W avg. | — |
| Drain Supply Voltage | 28 V (typical) | — |
| Drain-Source Voltage (Vdss) | 65 V (max) | — |
| Power Gain | 14 dB at 1.99 GHz | 14.5 dB (typical at 2.12 GHz, 28 V) |
| Drain Current | 750 mA (typical operating DC) | — |
| パッケージ | TO-272 WB-4 (overmolded plastic) | TO-272 WB-4 (over-molded plastic) |
| 実装タイプ | Surface Mount (SMD) | Surface Mount |
| ピン数 | 5 | — |
| Peak Reflow Temperature | 260 C | — |
| Maximum Power Dissipation (Absolute) | 218.8 W | — |
| Technology | Silicon LDMOS | Laterally Diffused MOS (LDMOS) |
| RoHS ステータス | [DATA_NEEDED: RoHS compliance status] | — |
| MSLレベル | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Test Frequency | — | 2.12 GHz |
| Output Power (Avg) | — | 10 W |
| Drain-Source Voltage (Max Rated) | — | 68 V |
| Test Supply Voltage (Vdd) | — | 28 V |
| Test Current | — | 500 mA |
| Supplier Device Package | — | TO-272 WB-4 |
| Operating Mode | — | Class AB |
| Application | — | W-CDMA base station, TDMA/CDMA, multicarrier amplifier |
| Compliance | — | RoHS (status per distributor listing - confirm at order) |