MRF5S19060NBR1 vs MRF5S21045NBR1 Comparação

Comparação detalhada lado a lado de MRF5S19060NBR1 por NXP Semiconductors e MRF5S21045NBR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF5S19060NBR1 MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 ✓ Ativo
NXP Semiconductors
MRF5S21045NBR1 MRF5S21045NBR1 - 10W RF Power LDMOS, 2110-2170 MHz | NXP

MRF5S21045NBR1 - 10W RF Power LDMOS, 2110-2170 MHz | NXP

MRF5S21045NBR1 Obsolete

Comparação de especificações

Parâmetro MRF5S19060NBR1 MRF5S21045NBR1
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Obsolete
Status do estoque In Stock In Stock
Preço unitário (USD) $25,40 $25,20
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP USA Inc. (formerly Freescale Semiconductor)
Tipo de transistor N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) N-Channel Enhancement-Mode Lateral MOSFET (LDMOS)
Configuration Dual Die (2 x N), Common Source —
Frequency Band 1930 MHz to 1990 MHz 2110 MHz to 2170 MHz
Output Power (P1dB) 60 W (CW/peak) —
Output Power (Average) 12 W avg. —
Drain Supply Voltage 28 V (typical) —
Drain-Source Voltage (Vdss) 65 V (max) —
Power Gain 14 dB at 1.99 GHz 14.5 dB (typical at 2.12 GHz, 28 V)
Drain Current 750 mA (typical operating DC) —
Encapsulamento TO-272 WB-4 (overmolded plastic) TO-272 WB-4 (over-molded plastic)
Tipo de montagem Surface Mount (SMD) Surface Mount
Contagem de pinos 5 —
Peak Reflow Temperature 260 C —
Maximum Power Dissipation (Absolute) 218.8 W —
Technology Silicon LDMOS Laterally Diffused MOS (LDMOS)
Status RoHS [DATA_NEEDED: RoHS compliance status] —
Nível MSL [DATA_NEEDED: MSL moisture sensitivity level] —
Test Frequency — 2.12 GHz
Output Power (Avg) — 10 W
Drain-Source Voltage (Max Rated) — 68 V
Test Supply Voltage (Vdd) — 28 V
Test Current — 500 mA
Supplier Device Package — TO-272 WB-4
Operating Mode — Class AB
Application — W-CDMA base station, TDMA/CDMA, multicarrier amplifier
Compliance — RoHS (status per distributor listing - confirm at order)

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