MRF5S9101MR1 vs MRF5S9101MBR1 比較
詳細な並列比較: MRF5S9101MR1 メーカー: NXP Semiconductors および MRF5S9101MBR1 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | MRF5S9101MR1 | MRF5S9101MBR1 |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | Obsolete | Obsolete |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $49.95 | $45.00 |
| トランジスタタイプ | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power Field Effect Transistor | LDMOS (Laterally Diffused MOSFET) |
| Frequency Range | 869 MHz to 960 MHz | 869 MHz to 960 MHz |
| Test Frequency | 960 MHz | 960 MHz |
| Test Voltage | 26 V | — |
| Test Current (Quiescent) | 700 mA | — |
| Power Output (POUT) | 100 W (CW) | — |
| Power Gain | 17.5 dB at 960 MHz | — |
| Drain-Source Voltage (Rated) | 68 V | — |
| Drain Current Rating | [DATA_NEEDED: maximum continuous drain current] | — |
| パッケージ / ケース | TO-270 WB-4 (Case 1486-03, Style 1) | TO-272 WB-4 (Case 1486-03, Style 1) |
| Supplier Device Package | TO-270 WB-4 | TO-272 WB-4 |
| 実装タイプ | Chassis / Flange Mount (through-hole flange) | Surface Mount |
| Lead Free Status | Replaced by MRF5S9101NR1/NBR1 (form/fit/function equivalent) | — |
| RoHS ステータス | Compliant (lead-free N-suffix variants) | [DATA_NEEDED: RoHS compliance status] |
| 動作温度 | [DATA_NEEDED: operating temperature range] | -40C to +150C (TJ) |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Thermal Resistance Junction-to-Case | [DATA_NEEDED: RθJC value] | — |
| Application | GSM / GSM EDGE / N-CDMA base station final-stage PA | — |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Output Power (Pout) | — | 100 W |
| Power Gain (Gps) | — | 17.5 dB (min, at 960 MHz, 26 V) |
| Test Drain Voltage (Vdd) | — | 26 V |
| Test Drain Current (Idq) | — | 700 mA |
| Drain-Source Voltage Rating (Vdss) | — | 68 V |
| Configuration | — | Single, Common Source |
| Maximum Power Dissipation | — | 427 W |
| Lead-Free / Terminal Finish | — | Tin-Lead (per Partstack listing) |
| Application Target | — | GSM / GSM EDGE Base Station Power Amplifiers |