MRF5S9101MR1 vs MRF5S9101MBR1 Comparaison
Comparaison détaillée côte à côte de MRF5S9101MR1 par NXP Semiconductors et MRF5S9101MBR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MRF5S9101MR1 | MRF5S9101MBR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Obsolete | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $49,95 | $45,00 |
| Type de transistor | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power Field Effect Transistor | LDMOS (Laterally Diffused MOSFET) |
| Frequency Range | 869 MHz to 960 MHz | 869 MHz to 960 MHz |
| Test Frequency | 960 MHz | 960 MHz |
| Test Voltage | 26 V | — |
| Test Current (Quiescent) | 700 mA | — |
| Power Output (POUT) | 100 W (CW) | — |
| Power Gain | 17.5 dB at 960 MHz | — |
| Drain-Source Voltage (Rated) | 68 V | — |
| Drain Current Rating | [DATA_NEEDED: maximum continuous drain current] | — |
| Boîtier / Format | TO-270 WB-4 (Case 1486-03, Style 1) | TO-272 WB-4 (Case 1486-03, Style 1) |
| Supplier Device Package | TO-270 WB-4 | TO-272 WB-4 |
| Type de montage | Chassis / Flange Mount (through-hole flange) | Surface Mount |
| Lead Free Status | Replaced by MRF5S9101NR1/NBR1 (form/fit/function equivalent) | — |
| Statut RoHS | Compliant (lead-free N-suffix variants) | [DATA_NEEDED: RoHS compliance status] |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | -40C to +150C (TJ) |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Thermal Resistance Junction-to-Case | [DATA_NEEDED: RθJC value] | — |
| Application | GSM / GSM EDGE / N-CDMA base station final-stage PA | — |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Output Power (Pout) | — | 100 W |
| Power Gain (Gps) | — | 17.5 dB (min, at 960 MHz, 26 V) |
| Test Drain Voltage (Vdd) | — | 26 V |
| Test Drain Current (Idq) | — | 700 mA |
| Drain-Source Voltage Rating (Vdss) | — | 68 V |
| Configuration | — | Single, Common Source |
| Maximum Power Dissipation | — | 427 W |
| Lead-Free / Terminal Finish | — | Tin-Lead (per Partstack listing) |
| Application Target | — | GSM / GSM EDGE Base Station Power Amplifiers |