MRF5S9101MR1 vs MRF5S9101MBR1 对比

详细并排对比 MRF5S9101MR1 出自 NXP Semiconductors 和 MRF5S9101MBR1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF5S9101MR1 MRF5S9101MR1 - 100W 869-960MHz RF Power LDMOS | NXP

MRF5S9101MR1 - 100W 869-960MHz RF Power LDMOS | NXP

MRF5S9101MR1 Obsolete
NXP Semiconductors
MRF5S9101MBR1 MRF5S9101MBR1 - 100W 869-960MHz LDMOS RF MOSFET | NXP

MRF5S9101MBR1 - 100W 869-960MHz LDMOS RF MOSFET | NXP

MRF5S9101MBR1 Obsolete

规格对比

参数 MRF5S9101MR1 MRF5S9101MBR1
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 Obsolete Obsolete
库存状态 有库存 有库存
单价(USD) $49.95 $45.00
晶体管类型 LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Technology RF Power Field Effect Transistor LDMOS (Laterally Diffused MOSFET)
Frequency Range 869 MHz to 960 MHz 869 MHz to 960 MHz
Test Frequency 960 MHz 960 MHz
Test Voltage 26 V —
Test Current (Quiescent) 700 mA —
Power Output (POUT) 100 W (CW) —
Power Gain 17.5 dB at 960 MHz —
Drain-Source Voltage (Rated) 68 V —
Drain Current Rating [DATA_NEEDED: maximum continuous drain current] —
封装 / 外壳 TO-270 WB-4 (Case 1486-03, Style 1) TO-272 WB-4 (Case 1486-03, Style 1)
Supplier Device Package TO-270 WB-4 TO-272 WB-4
安装类型 Chassis / Flange Mount (through-hole flange) Surface Mount
Lead Free Status Replaced by MRF5S9101NR1/NBR1 (form/fit/function equivalent) —
RoHS 状态 Compliant (lead-free N-suffix variants) [DATA_NEEDED: RoHS compliance status]
工作温度 [DATA_NEEDED: operating temperature range] -40C to +150C (TJ)
Storage Temperature [DATA_NEEDED: storage temperature range] —
Thermal Resistance Junction-to-Case [DATA_NEEDED: RθJC value] —
Application GSM / GSM EDGE / N-CDMA base station final-stage PA —
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) —
Output Power (Pout) — 100 W
Power Gain (Gps) — 17.5 dB (min, at 960 MHz, 26 V)
Test Drain Voltage (Vdd) — 26 V
Test Drain Current (Idq) — 700 mA
Drain-Source Voltage Rating (Vdss) — 68 V
Configuration — Single, Common Source
Maximum Power Dissipation — 427 W
Lead-Free / Terminal Finish — Tin-Lead (per Partstack listing)
Application Target — GSM / GSM EDGE Base Station Power Amplifiers

数据手册与资源

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