MRF5S9101MR1 vs MRF5S9101MBR1 비교
다음의 상세 나란히 비교: MRF5S9101MR1 제조: NXP Semiconductors 및 MRF5S9101MBR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF5S9101MR1 | MRF5S9101MBR1 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | Obsolete | Obsolete |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $49.95 | $45.00 |
| 트랜지스터 유형 | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power Field Effect Transistor | LDMOS (Laterally Diffused MOSFET) |
| Frequency Range | 869 MHz to 960 MHz | 869 MHz to 960 MHz |
| Test Frequency | 960 MHz | 960 MHz |
| Test Voltage | 26 V | — |
| Test Current (Quiescent) | 700 mA | — |
| Power Output (POUT) | 100 W (CW) | — |
| Power Gain | 17.5 dB at 960 MHz | — |
| Drain-Source Voltage (Rated) | 68 V | — |
| Drain Current Rating | [DATA_NEEDED: maximum continuous drain current] | — |
| 패키지 / 케이스 | TO-270 WB-4 (Case 1486-03, Style 1) | TO-272 WB-4 (Case 1486-03, Style 1) |
| Supplier Device Package | TO-270 WB-4 | TO-272 WB-4 |
| 실장 유형 | Chassis / Flange Mount (through-hole flange) | Surface Mount |
| Lead Free Status | Replaced by MRF5S9101NR1/NBR1 (form/fit/function equivalent) | — |
| RoHS 상태 | Compliant (lead-free N-suffix variants) | [DATA_NEEDED: RoHS compliance status] |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | -40C to +150C (TJ) |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Thermal Resistance Junction-to-Case | [DATA_NEEDED: RθJC value] | — |
| Application | GSM / GSM EDGE / N-CDMA base station final-stage PA | — |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Output Power (Pout) | — | 100 W |
| Power Gain (Gps) | — | 17.5 dB (min, at 960 MHz, 26 V) |
| Test Drain Voltage (Vdd) | — | 26 V |
| Test Drain Current (Idq) | — | 700 mA |
| Drain-Source Voltage Rating (Vdss) | — | 68 V |
| Configuration | — | Single, Common Source |
| Maximum Power Dissipation | — | 427 W |
| Lead-Free / Terminal Finish | — | Tin-Lead (per Partstack listing) |
| Application Target | — | GSM / GSM EDGE Base Station Power Amplifiers |