MRF6P9220HR3 vs MRF6P9220HR5 比較

詳細な並列比較: MRF6P9220HR3 メーカー: NXP Semiconductors および MRF6P9220HR5 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

NXP Semiconductors
MRF6P9220HR3 MRF6P9220HR3 - 880MHz 47W RF Power MOSFET | NXP

MRF6P9220HR3 - 880MHz 47W RF Power MOSFET | NXP

MRF6P9220HR3 ✓ 生産中
NXP Semiconductors
MRF6P9220HR5 MRF6P9220HR5 - 880MHz 47W RF Power MOSFET | NXP Semiconductors

MRF6P9220HR5 - 880MHz 47W RF Power MOSFET | NXP Semiconductors

MRF6P9220HR5 ✓ 生産中

仕様比較

パラメータ MRF6P9220HR3 MRF6P9220HR5
ブランド NXP Semiconductors NXP Semiconductors
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $58.40 $91.20
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Number MRF6P9220HR3 —
トランジスタタイプ N-Channel Lateral MOSFET (RF Power) N-Channel RF Power MOSFET
Technology LDMOS, enhancement-mode LDMOS (Laterally Diffused MOS)
Drain-Source Voltage (VDS) 28 V typical —
Test Frequency 880 MHz —
Typical Output Power (Pout) 47 W (average, N-CDMA) —
Power Gain (Gp) 20 dB typical —
Drain Current at Test (ID) [DATA_NEEDED: drain current at Pout test] —
Quiescent Bias Current (IDQ) 1.6 A typical —
Drain Efficiency [DATA_NEEDED: efficiency at test] —
Operating Frequency Range Up to 1000 MHz (broadband, up to ~1 GHz typical) —
パッケージ NI-860C3 (ceramic, flange-mount) —
Configuration Common-source, single-ended Single, Flanged
実装タイプ Surface/chassis mount (flange to heatsink) Through-Hole / Bolt-Down
Application Base-station PA, N-CDMA, industrial RF —
RoHS ステータス [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Operating Mode Enhancement mode —
Drain-Source Voltage (Vdss) — 68 V
Continuous Drain Current (Id) — 1.6 A
Typical Operating Voltage — 28 V
Operating Frequency — 880 MHz
Output Power (Pout) — 47 W (CW)
Power Gain (Gps) — 20 dB
パッケージ / ケース — NI-860C3 (5-pin ceramic, flange mount)
MSLレベル — [DATA_NEEDED: MSL level]
動作温度 — -40C to +150C (TJ)
Lead-Free — [DATA_NEEDED: lead-free status]
Polarization — N-Channel

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