MRF6P9220HR3 vs MRF6P9220HR5 비교
다음의 상세 나란히 비교: MRF6P9220HR3 제조: NXP Semiconductors 및 MRF6P9220HR5 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF6P9220HR3 | MRF6P9220HR5 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $58.40 | $91.20 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MRF6P9220HR3 | — |
| 트랜지스터 유형 | N-Channel Lateral MOSFET (RF Power) | N-Channel RF Power MOSFET |
| Technology | LDMOS, enhancement-mode | LDMOS (Laterally Diffused MOS) |
| Drain-Source Voltage (VDS) | 28 V typical | — |
| Test Frequency | 880 MHz | — |
| Typical Output Power (Pout) | 47 W (average, N-CDMA) | — |
| Power Gain (Gp) | 20 dB typical | — |
| Drain Current at Test (ID) | [DATA_NEEDED: drain current at Pout test] | — |
| Quiescent Bias Current (IDQ) | 1.6 A typical | — |
| Drain Efficiency | [DATA_NEEDED: efficiency at test] | — |
| Operating Frequency Range | Up to 1000 MHz (broadband, up to ~1 GHz typical) | — |
| 패키지 | NI-860C3 (ceramic, flange-mount) | — |
| Configuration | Common-source, single-ended | Single, Flanged |
| 실장 유형 | Surface/chassis mount (flange to heatsink) | Through-Hole / Bolt-Down |
| Application | Base-station PA, N-CDMA, industrial RF | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Operating Mode | Enhancement mode | — |
| Drain-Source Voltage (Vdss) | — | 68 V |
| Continuous Drain Current (Id) | — | 1.6 A |
| Typical Operating Voltage | — | 28 V |
| Operating Frequency | — | 880 MHz |
| Output Power (Pout) | — | 47 W (CW) |
| Power Gain (Gps) | — | 20 dB |
| 패키지 / 케이스 | — | NI-860C3 (5-pin ceramic, flange mount) |
| MSL 레벨 | — | [DATA_NEEDED: MSL level] |
| 동작 온도 | — | -40C to +150C (TJ) |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |
| Polarization | — | N-Channel |