MRF6P9220HR3 vs MRF6P9220HR5 Comparação

Comparação detalhada lado a lado de MRF6P9220HR3 por NXP Semiconductors e MRF6P9220HR5 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF6P9220HR3 MRF6P9220HR3 - 880MHz 47W RF Power MOSFET | NXP

MRF6P9220HR3 - 880MHz 47W RF Power MOSFET | NXP

MRF6P9220HR3 ✓ Ativo
NXP Semiconductors
MRF6P9220HR5 MRF6P9220HR5 - 880MHz 47W RF Power MOSFET | NXP Semiconductors

MRF6P9220HR5 - 880MHz 47W RF Power MOSFET | NXP Semiconductors

MRF6P9220HR5 ✓ Ativo

Comparação de especificações

Parâmetro MRF6P9220HR3 MRF6P9220HR5
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $58,40 $91,20
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Number MRF6P9220HR3 —
Tipo de transistor N-Channel Lateral MOSFET (RF Power) N-Channel RF Power MOSFET
Technology LDMOS, enhancement-mode LDMOS (Laterally Diffused MOS)
Drain-Source Voltage (VDS) 28 V typical —
Test Frequency 880 MHz —
Typical Output Power (Pout) 47 W (average, N-CDMA) —
Power Gain (Gp) 20 dB typical —
Drain Current at Test (ID) [DATA_NEEDED: drain current at Pout test] —
Quiescent Bias Current (IDQ) 1.6 A typical —
Drain Efficiency [DATA_NEEDED: efficiency at test] —
Operating Frequency Range Up to 1000 MHz (broadband, up to ~1 GHz typical) —
Encapsulamento NI-860C3 (ceramic, flange-mount) —
Configuration Common-source, single-ended Single, Flanged
Tipo de montagem Surface/chassis mount (flange to heatsink) Through-Hole / Bolt-Down
Application Base-station PA, N-CDMA, industrial RF —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Operating Mode Enhancement mode —
Drain-Source Voltage (Vdss) — 68 V
Continuous Drain Current (Id) — 1.6 A
Typical Operating Voltage — 28 V
Operating Frequency — 880 MHz
Output Power (Pout) — 47 W (CW)
Power Gain (Gps) — 20 dB
Encapsulamento / Caixa — NI-860C3 (5-pin ceramic, flange mount)
Nível MSL — [DATA_NEEDED: MSL level]
Temperatura de operação — -40C to +150C (TJ)
Lead-Free — [DATA_NEEDED: lead-free status]
Polarization — N-Channel

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