VNQ660SP vs VNQ660SPTR-E 比較

詳細な並列比較: VNQ660SP メーカー: STMicroelectronics および VNQ660SPTR-E メーカー: STMicroelectronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

STMicroelectronics
VNQ660SPTR-E VNQ660SPTR-E - Quad 6A High-Side Smart Power Switch | STMicroelectronics

VNQ660SPTR-E - Quad 6A High-Side Smart Power Switch | STMicroelectronics

VNQ660SPTR-E ✓ 生産中

仕様比較

パラメータ VNQ660SP VNQ660SPTR-E
ブランド STMicroelectronics STMicroelectronics
カテゴリ Power MOSFET Drivers Power MOSFET Drivers
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $2.45 $5.37
Part Number VNQ660SP —
Manufacturer STMicroelectronics —
Technology VIPower M0-3 ST VIPower M0-3 (vertical DMOS)
機能 Quad Channel High-Side Solid State Relay Quad-channel high-side solid-state relay
Number of Channels 4 4
出力構成 High-Side (N-Channel MOSFET) —
On-Resistance RDS(on) per Channel 50 mΩ (typical) —
Continuous Output Current per Channel 6 A —
Supply Voltage VCC 10 V to 36 V —
Input Compatibility CMOS-compatible logic inputs CMOS logic-level inputs
Open-Load Detection Yes (off-state) —
Undervoltage Shutdown Yes —
Overvoltage Shutdown Yes —
Overvoltage Clamp Yes (active avalanche) —
熱シャットダウン Yes —
Current Limitation Yes —
パッケージ PowerSO-10 (10-pin with exposed pad) PowerSO-10 with exposed bottom pad
実装タイプ Surface Mount Surface Mount
Switch Type — High-side N-channel power MOSFET
Supply Voltage (VCC) — 6 V to 36 V
Maximum Continuous Output Current (per channel) — 6 A
On-State Resistance (RDS(on)) — 40 mOhm typical (per channel)
Protection Features — Thermal shutdown, overvoltage clamp, undervoltage shutdown, open-load detection (off state), reverse battery protection
Status Feedback — Analog status flag per channel
Off-State Quiescent Current — [DATA_NEEDED: standby Iq]
動作温度 — -40 C to +125 C
Maximum Power Dissipation — 113.6 W (with proper thermal design)
RoHS ステータス — Compliant

データシート&リソース

すべての製品を閲覧 BOMを作成 見積もり依頼