VNQ660SP vs VNQ660SPTR-E 비교
다음의 상세 나란히 비교: VNQ660SP 제조: STMicroelectronics 및 VNQ660SPTR-E 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
STMicroelectronics
VNQ660SP - 6A Quad High-Side Solid State Relay, PowerSO-10 | STMicroelectronics
VNQ660SP ✓ 활성STMicroelectronics
VNQ660SPTR-E - Quad 6A High-Side Smart Power Switch | STMicroelectronics
VNQ660SPTR-E ✓ 활성사양 비교
| 파라미터 | VNQ660SP | VNQ660SPTR-E |
|---|---|---|
| 브랜드 | STMicroelectronics | STMicroelectronics |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.45 | $5.37 |
| Part Number | VNQ660SP | — |
| Manufacturer | STMicroelectronics | — |
| Technology | VIPower M0-3 | ST VIPower M0-3 (vertical DMOS) |
| 기능 | Quad Channel High-Side Solid State Relay | Quad-channel high-side solid-state relay |
| Number of Channels | 4 | 4 |
| 출력 구성 | High-Side (N-Channel MOSFET) | — |
| On-Resistance RDS(on) per Channel | 50 mΩ (typical) | — |
| Continuous Output Current per Channel | 6 A | — |
| Supply Voltage VCC | 10 V to 36 V | — |
| Input Compatibility | CMOS-compatible logic inputs | CMOS logic-level inputs |
| Open-Load Detection | Yes (off-state) | — |
| Undervoltage Shutdown | Yes | — |
| Overvoltage Shutdown | Yes | — |
| Overvoltage Clamp | Yes (active avalanche) | — |
| 열 차단 | Yes | — |
| Current Limitation | Yes | — |
| 패키지 | PowerSO-10 (10-pin with exposed pad) | PowerSO-10 with exposed bottom pad |
| 실장 유형 | Surface Mount | Surface Mount |
| Switch Type | — | High-side N-channel power MOSFET |
| Supply Voltage (VCC) | — | 6 V to 36 V |
| Maximum Continuous Output Current (per channel) | — | 6 A |
| On-State Resistance (RDS(on)) | — | 40 mOhm typical (per channel) |
| Protection Features | — | Thermal shutdown, overvoltage clamp, undervoltage shutdown, open-load detection (off state), reverse battery protection |
| Status Feedback | — | Analog status flag per channel |
| Off-State Quiescent Current | — | [DATA_NEEDED: standby Iq] |
| 동작 온도 | — | -40 C to +125 C |
| Maximum Power Dissipation | — | 113.6 W (with proper thermal design) |
| RoHS 상태 | — | Compliant |