VNQ660SP vs VNQ660SPTR-E 对比

详细并排对比 VNQ660SP 出自 STMicroelectronics 和 VNQ660SPTR-E 出自 STMicroelectronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

STMicroelectronics
VNQ660SPTR-E VNQ660SPTR-E - Quad 6A High-Side Smart Power Switch | STMicroelectronics

VNQ660SPTR-E - Quad 6A High-Side Smart Power Switch | STMicroelectronics

VNQ660SPTR-E ✓ 量产中

规格对比

参数 VNQ660SP VNQ660SPTR-E
品牌 STMicroelectronics STMicroelectronics
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.45 $5.37
Part Number VNQ660SP —
Manufacturer STMicroelectronics —
Technology VIPower M0-3 ST VIPower M0-3 (vertical DMOS)
功能 Quad Channel High-Side Solid State Relay Quad-channel high-side solid-state relay
Number of Channels 4 4
输出配置 High-Side (N-Channel MOSFET) —
On-Resistance RDS(on) per Channel 50 mΩ (typical) —
Continuous Output Current per Channel 6 A —
Supply Voltage VCC 10 V to 36 V —
Input Compatibility CMOS-compatible logic inputs CMOS logic-level inputs
Open-Load Detection Yes (off-state) —
Undervoltage Shutdown Yes —
Overvoltage Shutdown Yes —
Overvoltage Clamp Yes (active avalanche) —
热关断 Yes —
Current Limitation Yes —
封装 PowerSO-10 (10-pin with exposed pad) PowerSO-10 with exposed bottom pad
安装类型 Surface Mount Surface Mount
Switch Type — High-side N-channel power MOSFET
Supply Voltage (VCC) — 6 V to 36 V
Maximum Continuous Output Current (per channel) — 6 A
On-State Resistance (RDS(on)) — 40 mOhm typical (per channel)
Protection Features — Thermal shutdown, overvoltage clamp, undervoltage shutdown, open-load detection (off state), reverse battery protection
Status Feedback — Analog status flag per channel
Off-State Quiescent Current — [DATA_NEEDED: standby Iq]
工作温度 — -40 C to +125 C
Maximum Power Dissipation — 113.6 W (with proper thermal design)
RoHS 状态 — Compliant

数据手册与资源

浏览全部产品 创建 BOM 获取报价