1EDN6550BXTSA1 - 5A Gate Driver IC, SOT-23-6 | Infineon
部品番号: 1EDN6550BXTSA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.85 | $0.85 |
| 10 | $0.74 | $7.40 |
| 100 | $0.62 | $62.00 |
| 500 | $0.53 | $265.00 |
| 1,000 | $0.47 | $470.00 |
| 3,000 | $0.44 | $1,320.00 |
1EDN6550BXTSA1 概要
A gate driver IC is a power management semiconductor that sits between a low-power control signal (typically from a microcontroller or PWM controller) and the gate of a high-power switching transistor. Its role in the system hierarchy is: gate driver -> driver IC -> power management IC -> semiconductor. Gate drivers provide the high peak currents needed to rapidly charge and discharge the gate capacitance of MOSFETs, IGBTs, or GaN devices, thereby reducing switching losses and enabling high-frequency operation that would be impossible if the controller were forced to drive the gate directly.
Key features include differential input structure with true common-mode rejection, 4 A source / 8 A sink peak output current, 29 ns minimum input pulse width, TTL input thresholds, and integrated under-voltage lockout (UVLO) protection. The differential input architecture eliminates the need for a ground-referenced signal return path, which is critical when the driver is floating at a switched node potential in half-bridge or bootstrap configurations.
The 1EDN6550B architecture uses a monolithic high-voltage gate driver process with on-chip level shifting and proprietary output stage design. The asymmetric source/sink current rating (4 A / 8 A) is intentional - faster turn-off (high sink) minimizes dead time in half-bridge topologies, while the 4 A source rating is sufficient to drive most enhancement-mode GaN FETs and small-to-medium silicon MOSFETs without external booster stages.
Typical applications include synchronous buck and boost converters, half-bridge and full-bridge power stages, GaN-based point-of-load converters, Class-D audio amplifiers, motor driver pre-drivers, and any application requiring isolated or differential control signal interface to a power switch. The wide input voltage tolerance and small footprint also suit industrial 24 V bus systems and battery-powered portable equipment.
When designing with this device, place a 1 nF to 100 nF ceramic bypass capacitor as close as possible to the VCC pin to handle the high peak currents during switching. The differential input feature allows direct connection to an isolated gate-drive transformer or digital isolator output without level shifting.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
ドロップイン代替品: 1EDN6550BXTSA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: 1EDN6550BXTSA1 （同一形状・フットプリント） — 相違点: Package, Mounting Type, Driver Configuration, Input Logic Compatibility, Operating Temperature Range.
クイック比較ツール — 並列比較する代替部品を選択:
1EDN6550BXUSA1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
1EDN7550BXUSA1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
1EDN7511BXUSA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.95 / 個
データシートを見る →UCC27517DBVR
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MCP14A0154-E/SN
✅ ドロップイン📋 参考代替品（カタログ未掲載）
1EDN6550BXTSA1 最大定格＆電気的特性
| Product Type | Single-channel gate driver IC |
| Driver Configuration | High-Side / Low-Side, Non-Inverting |
| 出力数 | 1 |
| Peak Source Current | 4 A |
| Peak Sink Current | 8 A |
| Minimum Pulse Width | 29 ns |
| Input Type | Differential (TTL-compatible) |
| UVLO Protection | Yes (integrated) |
| 動作温度 | -40C to +125C |
| パッケージ | PG-SOT23-6-3 (SOT-23-6) |
| 実装タイプ | Surface Mount |
| RoHS ステータス | Compliant |
| ピン数 | 6 |
1EDN6550BXTSA1 ピン構成
| ピン 1 | VCC — Supply voltage for driver output stage |
| ピン 2 | IN+ — Non-inverting differential input (TTL) |
| ピン 3 | IN- — Inverting differential input (TTL) |
| ピン 4 | GND — Ground reference |
| ピン 5 | OUT — Gate driver output to MOSFET/GaN gate |
| ピン 6 | NC — Not connected (per datasheet) |
主な用途
1EDN6550BXTSA1 の用途: 6 件s: GaN-Based Point-of-Load (POL) Converters, Synchronous Buck and Boost Converters, Half-Bridge and Full-Bridge Power Stages, Class-D Audio Amplifiers, Motor Driver Pre-Driver Stage, Isolated DC-DC Converter Modules.
GaN-Based Point-of-Load (POL) Converters
The 1EDN6550BXTSA1's 4 A peak source and 8 A peak sink currents are ideally matched to enhancement-mode GaN FETs in 48 V-to-1 V POL converters. The 29 ns minimum pulse width supports switching frequencies above 1 MHz, where pulse widths can shrink below 50 ns and conventional gate drivers fail. Placed between a digital controller PWM output and the GaN gate, the 1EDN6550B provides the high di/dt needed to switch GaN HEMTs in under 5 ns. Unlike slower drivers that limit GaN's frequency advantage, the 1EDN6550B unlocks the full MHz-range switching capability that makes GaN attractive for data center and telecom power delivery.
おすすめ
Synchronous Buck and Boost Converters
In synchronous buck and boost converter power stages, the 1EDN6550BXTSA1 drives the low-side MOSFET with 4 A source / 8 A sink peak currents that minimize switching losses at high frequency. The asymmetric sink-dominant rating ensures faster turn-off of the synchronous rectifier, reducing dead time and improving efficiency by 1-2% compared to symmetric drivers. Differential inputs allow direct connection to an isolator or gate-drive transformer output, eliminating the level shifter that single-ended drivers require. This is particularly valuable in 24 V industrial bus converters where isolation is mandatory for safety compliance.
おすすめ
Half-Bridge and Full-Bridge Power Stages
The 1EDN6550BXTSA1 is commonly deployed as the low-side driver in half-bridge and full-bridge topologies driving motor control, Class-D audio, and isolated DC-DC converters. Its 29 ns minimum pulse width and fast propagation delay enable precise dead-time control below 20 ns, which is critical for high-frequency bridge operation where excessive dead time causes body diode conduction losses. The differential input feature simplifies bootstrap or isolated high-side drive arrangements by removing the need for a ground-referenced control signal return. In motor drives, this translates to lower switching losses, cooler operation, and higher continuous output current.
おすすめ
Class-D Audio Amplifiers
In Class-D audio amplifier output stages, the 1EDN6550BXTSA1 drives the output MOSFETs at switching frequencies of 250 kHz to 1 MHz with extremely low propagation delay jitter, which is essential for low total harmonic distortion (THD). The 4 A source / 8 A sink capability handles the high peak gate charge currents required when switching large output MOSFETs at audio-band PWM frequencies. The differential input structure rejects common-mode noise from the high-current output stage, preventing audio-band interference that single-ended drivers often pick up. This results in cleaner audio reproduction with THD+N below 0.01%.
おすすめ
Motor Driver Pre-Driver Stage
The 1EDN6550BXTSA1 serves as a pre-driver in industrial motor drive systems, where it interfaces between a low-voltage microcontroller or DSP and the high-current IGBT or MOSFET half-bridge. Its differential input structure is particularly valuable in motor drives where the gate driver often sits on a high-side floating potential that would cause ground-referenced drivers to malfunction. The 8 A peak sink current ensures fast IGBT turn-off, reducing switching losses and improving PWM inverter efficiency. Wide operating temperature range supports industrial environment deployment up to 125C junction temperature.
おすすめ
Isolated DC-DC Converter Modules
In isolated DC-DC brick converters (typically 48 V to 5-12 V at 100-600 W), the 1EDN6550BXTSA1 drives the primary-side MOSFETs of the full-bridge or push-pull topology. The differential input directly accepts the output of a digital isolator or gate-drive transformer, eliminating the discrete level-shift circuit that adds cost and propagation delay. The 29 ns minimum pulse width supports the high-frequency operation (>500 kHz) that minimizes transformer size in modern brick designs. This combination enables power densities exceeding 200 W/inch3 in telecom and server voltage-regulator-module (VRM) applications.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: 1EDN6550BXTSA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | 1EDN6550BXUSA1 | 1EDN7550BXUSA1 | 1EDN7511BXUSA1 | UCC27517DBVR | MCP14A0154-E/SN |
|---|---|---|---|---|---|---|
| Package | PG-SOT23-6-3 (SOT-23-6) | PG-SOT23-6-3 - same | PG-SOT23-6-3 - same | PG-SOT23-6-3 - same | SOT-23-6 - same | SOT-23-6 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Texas Instruments | Microchip Technology |
| Peak Source Current | 4 A | 4 A | 4 A | 4 A | 4 A | 1.5 A |
| Peak Sink Current | 8 A | 8 A | 8 A | 4 A | 4 A | 1.5 A |
| Input Type | Differential (TTL) | Differential (TTL) | Differential (TTL) | Differential (TTL) | Single-ended (TTL) | Single-ended (TTL) |
| UVLO Protection | Yes | Yes | Yes | Yes | Yes | No |
主な差別化要因
- Differential TTL inputs eliminate level shifter requirement （vs UCC27517DBVR)
- Asymmetric 4A/8A source/sink for optimized GaN driving （vs MCP14A0154-E/SN)
- 29 ns minimum pulse width supports >1 MHz GaN switching （vs MCP14A0154-E/SN)
設計ノート
Place a 100 nF X7R ceramic bypass capacitor as close as possible to the VCC pin (pin 1), with the ground return via a low-impedance trace directly to the GND pin (pin 4). The high di/dt of gate charge current (up to 8 A peak sink) creates severe voltage transients if VCC inductance is not minimized. Estimated: with 1 nH of package lead + PCB inductance and 8 A peak sink current, the VCC droop would be approximately 8 V without local decoupling - clearly unacceptable. A 100 nF ceramic with 0.5 nH ESL reduces this to under 1 V.
Route the gate drive output trace (pin 5) as a 50 ohm microstrip or with minimized loop area to the gate of the driven MOSFET/GaN FET. The gate-source loop area directly determines the radiated EMI and ringing amplitude during switching transitions. For GaN FETs with sub-nanosecond edges, keep the gate loop under 5 mm total length. Place the driver within 3 mm of the gate pin to minimize parasitic inductance that causes gate-source overvoltage and potential device failure.
Estimated: at continuous switching operation with 4 A source / 8 A sink at 1 MHz and typical GaN gate charge of 5 nC, the driver dissipation is approximately 40 mW - well within the SOT-23-6 thermal capability (theta_JA approximately 200 C/W on standard JEDEC test board). However, in high-frequency hard-switching applications at elevated ambient temperature, verify junction temperature remains below 125C by either reducing switching frequency or improving PCB copper pour for heat spreading.
Do not leave the differential inputs (IN+ and IN-) floating. Both inputs require defined logic levels - if left open, the driver output state is undefined and may oscillate, causing spurious gate drive events that can damage the downstream power switch. If using single-ended input (IN+ only), tie IN- to a valid logic level (typically VCC for non-inverting operation). Also verify the differential common-mode range of the inputs is not exceeded when interfacing to a gate-drive transformer output.
コンプライアンス情報
RoHS and REACH compliance per Infineon product page. Not AEC-Q100 qualified - for automotive gate driver applications, consider the EiceDRIVER 1EDN automotive-grade variants.
