1EDN6550BXTSA1 - 5A Gate Driver IC, SOT-23-6 | Infineon
MPN: 1EDN6550BXTSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.85 | $0.85 |
| 10 | $0.74 | $7.40 |
| 100 | $0.62 | $62.00 |
| 500 | $0.53 | $265.00 |
| 1,000 | $0.47 | $470.00 |
| 3,000 | $0.44 | $1,320.00 |
Drop-in alternatives for 1EDN6550BXTSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
1EDN6550BXUSA1
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1EDN7550BXUSA1
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1EDN7511BXUSA1
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UCC27517DBVR
β Drop-Inπ Reference alternative (not in catalog)
MCP14A0154-E/SN
β Drop-Inπ Reference alternative (not in catalog)
1EDN6550BXTSA1 Maximum Ratings & Electrical Characteristics
| Product Type | Single-channel gate driver IC |
| Driver Configuration | High-Side / Low-Side, Non-Inverting |
| Number of Outputs | 1 |
| Peak Source Current | 4 A |
| Peak Sink Current | 8 A |
| Minimum Pulse Width | 29 ns |
| Input Type | Differential (TTL-compatible) |
| UVLO Protection | Yes (integrated) |
| Operating Temperature | -40C to +125C |
| Package | PG-SOT23-6-3 (SOT-23-6) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Pin Count | 6 |
1EDN6550BXTSA1 Pin Configuration
| Pin 1 | VCC β Supply voltage for driver output stage |
| Pin 2 | IN+ β Non-inverting differential input (TTL) |
| Pin 3 | IN- β Inverting differential input (TTL) |
| Pin 4 | GND β Ground reference |
| Pin 5 | OUT β Gate driver output to MOSFET/GaN gate |
| Pin 6 | NC β Not connected (per datasheet) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
1EDN6550BXTSA1 is suitable for 6 applications: GaN-Based Point-of-Load (POL) Converters, Synchronous Buck and Boost Converters, Half-Bridge and Full-Bridge Power Stages, Class-D Audio Amplifiers, Motor Driver Pre-Driver Stage, Isolated DC-DC Converter Modules.
GaN-Based Point-of-Load (POL) Converters
The 1EDN6550BXTSA1's 4 A peak source and 8 A peak sink currents are ideally matched to enhancement-mode GaN FETs in 48 V-to-1 V POL converters. The 29 ns minimum pulse width supports switching frequencies above 1 MHz, where pulse widths can shrink below 50 ns and conventional gate drivers fail. Placed between a digital controller PWM output and the GaN gate, the 1EDN6550B provides the high di/dt needed to switch GaN HEMTs in under 5 ns. Unlike slower drivers that limit GaN's frequency advantage, the 1EDN6550B unlocks the full MHz-range switching capability that makes GaN attractive for data center and telecom power delivery.
Recommended
Synchronous Buck and Boost Converters
In synchronous buck and boost converter power stages, the 1EDN6550BXTSA1 drives the low-side MOSFET with 4 A source / 8 A sink peak currents that minimize switching losses at high frequency. The asymmetric sink-dominant rating ensures faster turn-off of the synchronous rectifier, reducing dead time and improving efficiency by 1-2% compared to symmetric drivers. Differential inputs allow direct connection to an isolator or gate-drive transformer output, eliminating the level shifter that single-ended drivers require. This is particularly valuable in 24 V industrial bus converters where isolation is mandatory for safety compliance.
Recommended
Half-Bridge and Full-Bridge Power Stages
The 1EDN6550BXTSA1 is commonly deployed as the low-side driver in half-bridge and full-bridge topologies driving motor control, Class-D audio, and isolated DC-DC converters. Its 29 ns minimum pulse width and fast propagation delay enable precise dead-time control below 20 ns, which is critical for high-frequency bridge operation where excessive dead time causes body diode conduction losses. The differential input feature simplifies bootstrap or isolated high-side drive arrangements by removing the need for a ground-referenced control signal return. In motor drives, this translates to lower switching losses, cooler operation, and higher continuous output current.
Recommended
Class-D Audio Amplifiers
In Class-D audio amplifier output stages, the 1EDN6550BXTSA1 drives the output MOSFETs at switching frequencies of 250 kHz to 1 MHz with extremely low propagation delay jitter, which is essential for low total harmonic distortion (THD). The 4 A source / 8 A sink capability handles the high peak gate charge currents required when switching large output MOSFETs at audio-band PWM frequencies. The differential input structure rejects common-mode noise from the high-current output stage, preventing audio-band interference that single-ended drivers often pick up. This results in cleaner audio reproduction with THD+N below 0.01%.
Recommended
Motor Driver Pre-Driver Stage
The 1EDN6550BXTSA1 serves as a pre-driver in industrial motor drive systems, where it interfaces between a low-voltage microcontroller or DSP and the high-current IGBT or MOSFET half-bridge. Its differential input structure is particularly valuable in motor drives where the gate driver often sits on a high-side floating potential that would cause ground-referenced drivers to malfunction. The 8 A peak sink current ensures fast IGBT turn-off, reducing switching losses and improving PWM inverter efficiency. Wide operating temperature range supports industrial environment deployment up to 125C junction temperature.
Recommended
Isolated DC-DC Converter Modules
In isolated DC-DC brick converters (typically 48 V to 5-12 V at 100-600 W), the 1EDN6550BXTSA1 drives the primary-side MOSFETs of the full-bridge or push-pull topology. The differential input directly accepts the output of a digital isolator or gate-drive transformer, eliminating the discrete level-shift circuit that adds cost and propagation delay. The 29 ns minimum pulse width supports the high-frequency operation (>500 kHz) that minimizes transformer size in modern brick designs. This combination enables power densities exceeding 200 W/inch3 in telecom and server voltage-regulator-module (VRM) applications.
Recommended
Recommended Products Summary
Engineering reference data for 1EDN6550BXTSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1EDN6550BXUSA1 | 1EDN7550BXUSA1 | 1EDN7511BXUSA1 | UCC27517DBVR | MCP14A0154-E/SN |
|---|---|---|---|---|---|---|
| Package | PG-SOT23-6-3 (SOT-23-6) | PG-SOT23-6-3 - same | PG-SOT23-6-3 - same | PG-SOT23-6-3 - same | SOT-23-6 - same | SOT-23-6 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Texas Instruments | Microchip Technology |
| Peak Source Current | 4 A | 4 A | 4 A | 4 A | 4 A | 1.5 A |
| Peak Sink Current | 8 A | 8 A | 8 A | 4 A | 4 A | 1.5 A |
| Minimum Pulse Width | 29 ns | 29 ns | 29 ns | [DATA_NEEDED] | 30 ns | [DATA_NEEDED] |
| Input Type | Differential (TTL) | Differential (TTL) | Differential (TTL) | Differential (TTL) | Single-ended (TTL) | Single-ended (TTL) |
| UVLO Protection | Yes | Yes | Yes | Yes | Yes | No |
| Unit Price (qty 1000) | $0.47 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | $0.55 | $0.48 |
Key Differentiators
- Differential TTL inputs eliminate level shifter requirement (vs UCC27517DBVR)
- Asymmetric 4A/8A source/sink for optimized GaN driving (vs MCP14A0154-E/SN)
- 29 ns minimum pulse width supports >1 MHz GaN switching (vs MCP14A0154-E/SN)
Design Notes
Place a 100 nF X7R ceramic bypass capacitor as close as possible to the VCC pin (pin 1), with the ground return via a low-impedance trace directly to the GND pin (pin 4). The high di/dt of gate charge current (up to 8 A peak sink) creates severe voltage transients if VCC inductance is not minimized. Estimated: with 1 nH of package lead + PCB inductance and 8 A peak sink current, the VCC droop would be approximately 8 V without local decoupling - clearly unacceptable. A 100 nF ceramic with 0.5 nH ESL reduces this to under 1 V.
Route the gate drive output trace (pin 5) as a 50 ohm microstrip or with minimized loop area to the gate of the driven MOSFET/GaN FET. The gate-source loop area directly determines the radiated EMI and ringing amplitude during switching transitions. For GaN FETs with sub-nanosecond edges, keep the gate loop under 5 mm total length. Place the driver within 3 mm of the gate pin to minimize parasitic inductance that causes gate-source overvoltage and potential device failure.
Estimated: at continuous switching operation with 4 A source / 8 A sink at 1 MHz and typical GaN gate charge of 5 nC, the driver dissipation is approximately 40 mW - well within the SOT-23-6 thermal capability (theta_JA approximately 200 C/W on standard JEDEC test board). However, in high-frequency hard-switching applications at elevated ambient temperature, verify junction temperature remains below 125C by either reducing switching frequency or improving PCB copper pour for heat spreading.
Do not leave the differential inputs (IN+ and IN-) floating. Both inputs require defined logic levels - if left open, the driver output state is undefined and may oscillate, causing spurious gate drive events that can damage the downstream power switch. If using single-ended input (IN+ only), tie IN- to a valid logic level (typically VCC for non-inverting operation). Also verify the differential common-mode range of the inputs is not exceeded when interfacing to a gate-drive transformer output.
Compliance Information
RoHS and REACH compliance per Infineon product page. Not AEC-Q100 qualified - for automotive gate driver applications, consider the EiceDRIVER 1EDN automotive-grade variants.
