BSS126H6327XTSA2 - 600V N-Ch Depletion MOSFET SOT-23 | Infineon
部品番号: BSS126H6327XTSA2 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.78 | $0.78 |
| 10 | $0.65 | $6.50 |
| 100 | $0.48 | $48.00 |
| 500 | $0.39 | $195.00 |
| 1,000 | $0.32 | $320.00 |
BSS126H6327XTSA2 概要
A depletion-mode MOSFET is a field-effect transistor whose channel is physically present at fabrication; conduction is maximum when VGS = 0 and the channel is progressively pinched off as VGS is driven more negative (for an N-channel device). This category sits within the broader MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) family, which in turn belongs to power management and discrete semiconductors. Depletion-mode parts are rare in modern designs but are valued for circuits where the device must conduct before any control voltage is established, such as startup bleeding in offline flyback converters.
Key features of the BSS126H6327XTSA2 include the 600 V drain-source breakdown voltage that gives significant headroom for offline 120/230 VAC-derived rails, a low 21 mA continuous drain rating suitable for low-current auxiliary paths, and Infineon's SIPMOS process which combines vertical DMOS power-device ruggedness with small-signal SOT-23 packaging. The part operates as a constant-current source when biased with an external resistor, and as a high-side or low-side switch when the gate is driven negative relative to the source.
Typical applications include power-supply startup assist (providing initial bias to a controller before the auxiliary winding takes over), over-voltage protection clamps, in-rush current limiters inserted in series with downstream rails, and offline voltage references where the device establishes a defined current into a Zener diode. Its normally-on behavior also makes it useful for fail-safe circuits that must default to a conductive state.
When designing with the BSS126H6327XTSA2, treat the gate as a control input that requires negative bias to turn the device fully off; leaving the gate open is acceptable for many 'normally-on' topologies but ESD handling on the gate node must follow standard SOT-23 precautions. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on any single manufacturer or distributor page.
ドロップイン代替品: BSS126H6327XTSA2 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: BSS126H6327XTSA2 （同一形状・フットプリント） — 相違点: Continuous Drain Current (ID), FET Type, Part Number, Package, RoHS Status.
クイック比較ツール — 並列比較する代替部品を選択:
BSS126H6906XTSA1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
BSS119NH6327XTSA1
✅ ドロップイン✓ 在庫あり
$0.12 / 個
データシートを見る →BSS127H6327XTSA2
✅ ドロップイン✓ 在庫あり
$0.032 / 個
データシートを見る →BSS123NH6327XTSA1
✅ ドロップイン✓ 在庫あり
$0.085 / 個
データシートを見る →BSS127S-7
✅ ドロップイン📋 参考代替品（カタログ未掲載）
BSS84PH6327XTSA2
✅ ドロップイン✓ 在庫あり
$0.1 / 個
データシートを見る →BSS126H6327XTSA2 最大定格＆電気的特性
| FET Type | N-Channel Depletion Mode |
| Drain-Source Voltage (VDS) Max | 600 V |
| Continuous Drain Current (ID) at Ta | 21 mA |
| Power Dissipation (PD) at Ta | 500 mW |
| On-Resistance (RDS(on)) Max | 500 ohm (typical for depletion-mode) |
| Technology | SIPMOS (DMOS) |
| パッケージ | SOT-23-3 (PG-SOT23) |
| 実装タイプ | Surface Mount |
| 動作温度範囲 | -55C to +150C (junction, typical) |
| ピン数 | 3 |
| Configuration | Single |
| Channel Mode | Depletion (normally-on at VGS = 0) |
| MSLレベル | 1 (per JEDEC J-STD-020) |
| RoHS ステータス | Compliant |
| Lead-Free | Yes |
| ハロゲンフリー | Yes (Infineon 'green' package) |
BSS126H6327XTSA2 ピン構成
| ピン 1 | Gate — Gate control input; negative VGS required to turn off depletion-mode channel |
| ピン 2 | Source — Source terminal; reference node for gate drive |
| ピン 3 | Drain — Drain terminal; high-voltage switching node |
主な用途
BSS126H6327XTSA2 の用途: 6 件s: Offline Flyback Startup Bias, Over-Voltage Protection Clamp, In-Rush Current Limiter, Offline Voltage Reference, Fail-Safe Relay Driver, Industrial Sensor Signal Conditioning.
Offline Flyback Startup Bias
The BSS126H6327XTSA2's 600 V VDS and depletion-mode (normally-on) characteristic make it ideal for offline flyback converter startup bias paths, where it must conduct before any controller is awake. Per Infineon application guidance, the device is wired between the rectified HV rail and the auxiliary VCC node; as the auxiliary winding takes over, a negative gate drive progressively starves the BSS126, reducing wasted dissipation. Its 21 mA ID rating matches the typical 5-15 mA controller quiescent bias, and the SIPMOS process delivers the ruggedness needed to absorb repetitive avalanche energy during the startup transient.
おすすめ
Over-Voltage Protection Clamp
For over-voltage protection clamps on auxiliary rails, the BSS126H6327XTSA2 provides a normally-on conduction path that latches into a defined fault state when a downstream Zener reference is exceeded. According to Infineon product application notes, the 600 V breakdown gives ample margin for 24 V industrial rails with inductive spikes, while the 500 mW power dissipation rating handles short transient stress events. The depletion-mode channel ensures the clamp is engaged from power-on, eliminating the cold-start blind spot of enhancement-mode protection devices.
おすすめ
In-Rush Current Limiter
In in-rush current limiters, the BSS126H6327XTSA2 acts as a series-pass element that begins conducting at power-on (depletion-mode normally-on) and is gradually pinched off by a control circuit as the downstream bulk capacitors charge. The 21 mA ID limit comfortably handles the reduced steady-state current once limiting is complete, and the SOT-23 footprint suits compact auxiliary rails. Compared to NTC thermistors, the BSS126 active limiter recovers immediately after a fault, with no thermal cool-down delay.
おすすめ
Offline Voltage Reference
As an offline voltage reference element, the BSS126H6327XTSA2 establishes a defined constant current into a Zener diode, producing a stable reference voltage on the high-voltage side before any isolation or regulation is active. The depletion-mode channel guarantees the reference is alive at power-on, while the 600 V breakdown withstands the unconditioned rectified mains. The SOT-23 package allows placement directly across the HV rails without crowding the main power stage.
おすすめ
Fail-Safe Relay Driver
For fail-safe relay driver paths, the BSS126H6327XTSA2's normally-on characteristic ensures the relay defaults to its energized state when the system controller is unpowered, satisfying safety requirements for alarm or emergency circuits. The 600 V VDS allows the same part to be reused on 48 V telecom relays and 24 V industrial rails. A small-signal transistor pulling the gate below source turns the device off during normal operation.
おすすめ
Industrial Sensor Signal Conditioning
In industrial 4-20 mA sensor loops and high-side current sources, the BSS126H6327XTSA2 provides a stable high-impedance constant-current element when biased with a source resistor. The SOT-23-3 footprint allows dense PCB layout on sensor front-ends, while the 600 V rating tolerates common-mode transients on long field wiring, protecting downstream ADC inputs. The depletion-mode behavior simplifies the bootstrap power architecture in 2-wire loop-powered transmitters.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: BSS126H6327XTSA2 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | BSS126H6906XTSA1 | BSS119NH6327XTSA1 | BSS127H6327XTSA2 | BSS123NH6327XTSA1 | BSS127S-7 |
|---|---|---|---|---|---|---|
| Package | SOT-23-3 (PG-SOT23) | SOT-23-3 (PG-SOT23) - same | SOT-23-3 (PG-SOT23) - same | SOT-23-3 (PG-SOT23) - same | SOT-23-3 (PG-SOT23) - same | SOT-23-3 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Diodes Incorporated |
| FET Type | N-Channel Depletion | N-Channel Depletion | N-Channel Depletion | N-Channel Enhancement | N-Channel Enhancement | N-Channel Enhancement |
| Automotive Grade (AEC-Q101) | No | Yes (AEC-Q101) | No | No | No | No |
| RoHS / Halogen-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
主な差別化要因
- 600 V VDS in SOT-23-3 small-signal outline （vs BSS127S-7 (Diodes Incorporated))
- Depletion-mode normally-on behavior （vs BSS123NH6327XTSA1)
- Automotive-qualified variant available in same die （vs BSS126H6906XTSA1)
設計ノート
Do not leave the BSS126H6327XTSA2 gate floating. Although depletion-mode devices conduct at VGS=0, an uncontrolled gate node can pick up noise and modulate the channel; tie the gate to source through a high-value resistor (1-10 Mohm) to define a default state. For gate-driven turn-off, ensure the negative VGS drive reaches at least the datasheet threshold across the full temperature range, including cold-start worst case at -40C.
Estimated: at 21 mA continuous drain current and 500 mW power dissipation rating on the SOT-23-3 package, the device can dissipate its full rating on the standard JEDEC 1sq-in copper pour with theta_JA around 250-300 C/W. For sustained high-voltage, high-current operation, derate by 30-50% or add additional thermal copper. In offline startup applications the device runs only during the brief bias-up phase so thermal stress is well below steady-state rating.
Place the BSS126H6327XTSA2 source pin directly at the local ground return, with the gate-bias network returned to the same source node to avoid ground-loop modulation of VGS. Route the high-voltage drain trace with adequate clearance per IPC-2221 for the working voltage plus margin. Keep the gate trace short and away from the switching drain node to prevent capacitive coupling that could re-trigger the channel during high dV/dt events.
コンプライアンス情報
RoHS and halogen-free green packaging per Infineon product compliance. AEC-Q101 qualified variant available as BSS126H6906XTSA1 for automotive.
