BSS127H6327XTSA2 - 600V N-Ch MOSFET, 21mA, SOT-23 | Infineon
MPN: BSS127H6327XTSA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.0585 | $0.06 |
| 10 | $0.055 | $0.55 |
| 100 | $0.048 | $4.80 |
| 500 | $0.042 | $21.00 |
| 1,000 | $0.038 | $38.00 |
| 3,000 | $0.032 | $96.00 |
Drop-in alternatives for BSS127H6327XTSA2 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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BSS127S-7
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View Datasheet →BSS127H6327XTSA2 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel SIPMOS, enhancement mode |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 21 mA (Ta) |
| Gate Threshold Voltage (VGS(th)) | 4.5 V (logic level, rated) |
| On-State Resistance (RDS(on)) max | 500 ohm at ID = 21 mA |
| Total Power Dissipation (Ptot) | 500 mW (Ta) |
| Operating Junction Temperature | -55 C to +150 C |
| Package | SOT-23-3 (PG-SOT23) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| dv/dt Rated | Yes |
| Automotive Qualification | AEC-Q101 |
| RoHS Status | Compliant (lead-free) |
| Halogen-Free | Yes, per IEC 61249-2-21 |
BSS127H6327XTSA2 Pin Configuration
| Pin 1 | GATE — Gate input (logic-level, 4.5 V threshold) |
| Pin 2 | SOURCE — Source terminal (connected to ground in low-side switch) |
| Pin 3 | DRAIN — Drain terminal (high-voltage node, up to 600 V) |
Safe Operating Area (DC)
Typical Applications
BSS127H6327XTSA2 is suitable for 6 applications: Solid-State Relay (SSR) Front-End, High-Voltage Line-Side Interface, Automotive Sensor Interface Module, Piezo Transducer Driver, Household Appliance Control Board, Industrial Control Signal Multiplexer.
Solid-State Relay (SSR) Front-End
The BSS127H6327XTSA2's 600 V drain-source breakdown and 4.5 V logic-level gate threshold make it ideal for the input stage of solid-state relays switching rectified 230 V AC or 400 V DC loads. Its 21 mA continuous drain current drives optocoupler LED inputs or low-power trigger circuits without external current limiting, while the dv/dt ruggedness rating prevents false triggering from line transients. Place the BSS127 between the line voltage and the gate driver network; a 10 kohm gate-source pull-down resistor prevents inadvertent turn-on during MCU reset. Compared to a 600 V bipolar transistor front-end, the BSS127's near-zero input current simplifies the microcontroller side and removes the need for a base-current limiting resistor.
Recommended
High-Voltage Line-Side Interface
The BSS127H6327XTSA2 serves as a robust interface between low-voltage microcontroller GPIO and line-voltage (110 V AC to 240 V AC) signal conditioning networks. Its 600 V VDS rating withstands rectified line transients, and the 4.5 V VGS(th) allows direct MCU drive without a level shifter. Use it as a high-side bleed switch to discharge X-capacitor safety bleeder resistors when AC is disconnected, or as a low-side clamp in zero-cross detection circuits. Compared to a discrete 600 V BJT front-end, the BSS127's voltage-controlled gate eliminates base-current draw and improves switching symmetry across the AC cycle.
Recommended
Automotive Sensor Interface Module
The BSS127H6327XTSA2's AEC-Q101 qualification makes it suitable for automotive sensor interfaces, body-electronics modules, and HVAC controls operating across -40 C to +150 C junction temperature. Its 21 mA ID rating drives sensor excitation currents for thermistor or hall-effect signal conditioning, while the 600 V VDS provides ample margin for 12 V/24 V automotive load-dump transients. Pair the BSS127 with a 5 V MCU GPIO for direct gate drive in sensor multiplexing or low-side switch positions. Compared to non-automotive-qualified SOT-23 MOSFETs, the BSS127H6327XTSA2 delivers proven reliability under H3TRB and temperature-cycle stress per AEC-Q101.
Recommended
Piezo Transducer Driver
The BSS127H6327XTSA2's high VDS rating and small SOT-23 package suit piezo transducer and buzzer driver circuits in industrial control panels and consumer appliances. Its 21 mA continuous current drives low-power piezo elements for audible feedback, while the 600 V breakdown supports piezo transformers in CCFL backlight or ozone-generator applications. Drive the gate from a 5 V logic output through a 1 kohm series resistor to limit ringing from piezo capacitance. Compared to a 600 V BJT driver, the BSS127's voltage-controlled gate enables cleaner switching edges and lower harmonic distortion in audio-frequency piezo applications.
Recommended
Household Appliance Control Board
The BSS127H6327XTSA2 fits white-goods and household appliance control boards as a low-current signal switch for relay coil drivers, status LEDs, and user-interface sense lines. Its 600 V VDS withstands inductive kickback from 12 V or 24 V relay coils when properly clamped, while the logic-level gate drives directly from appliance microcontroller GPIO. Use it as a low-side switch for relay coils or as a high-side enable for optoisolated triac drivers. Compared to electromechanical relays in the same role, the BSS127 eliminates coil inrush current and provides silent, arc-free switching for appliance user-interface circuits.
Recommended
Industrial Control Signal Multiplexer
The BSS127H6327XTSA2 acts as an analog signal multiplexer switch in industrial process-control and PLC input modules, where its 600 V VDS and 21 mA ID rating handle 4-20 mA current loops and 0-10 V analog signals with margin. Its low on-state resistance of 500 ohm typical introduces minimal insertion loss for low-level analog signals, while the small SOT-23 package enables high-channel-density multiplexer designs on compact PLC cards. Pair the BSS127 with a precision op-amp buffer to build a 4-channel or 8-channel analog input multiplexer. Compared to electromechanical reed relays, the BSS127 delivers faster switching, longer operational life, and lower power consumption in continuous-operation industrial applications.
Recommended
Recommended Products Summary
Engineering reference data for BSS127H6327XTSA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSS127S-7 | BSS87H6327FTSA1 | BSS123IXTSA1 |
|---|---|---|---|---|
| Brand | Infineon | Diodes Incorporated | Infineon | Infineon |
| Package | SOT-23-3 (PG-SOT23) | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same |
| Drain-Source Voltage (VDS) | 600 V | [DATA_NEEDED] | 240 V | 100 V |
| Continuous Drain Current (ID) | 21 mA | [DATA_NEEDED] | [DATA_NEEDED] | 190 mA |
| On-State Resistance (RDS(on)) | 500 ohm max at 21 mA | [DATA_NEEDED] | lower | lower |
| Gate Threshold Voltage (VGS(th)) | 4.5 V (logic level) | [DATA_NEEDED] | logic level | logic level |
| Automotive Qualification | AEC-Q101 | [DATA_NEEDED] | AEC-Q101 | AEC-Q101 |
| Channel Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
| Unit Price (1 pc, as of 2026-09-13) | $0.0585 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Highest VDS rating in SOT-23-3 logic-level class (vs BSS87H6327FTSA1)
- AEC-Q101 automotive qualification at lowest unit price (vs BSS127S-7)
- Logic-level VGS(th) compatible with 5V MCU direct drive (vs BSS123IXTSA1)
Design Notes
Mount the BSS127H6327XTSA2 with the SOT-23 tab connected to the drain (pin 3). For 600 V applications, maintain a minimum creepage distance of 1.5 mm between drain pad and any low-voltage trace to comply with IEC 60950 / IEC 62368 clearance requirements. The SOT-23 thermal pad should be soldered to a small copper pour (>= 25 mm^2) to limit junction temperature rise at the 21 mA continuous rating; at 500 mW Ptot and theta_JA of approximately 320 C/W on a 1 oz copper FR-4 board, the junction rises about 80 C above ambient at full load, leaving headroom to 150 C Tj max.
The BSS127H6327XTSA2 is a small-signal MOSFET rated at 21 mA, not a power MOSFET - do not use it as a load switch for currents above ~50 mA pulsed or 21 mA continuous. Exceeding the SOA curve causes thermal runaway and device failure. For load switching above 0.5 A, choose a dedicated power MOSFET such as the BSZ070N08LS5ATMA1 or BSC0906NSATMA1 instead. The 600 V VDS rating is intended for high-voltage signal conditioning, not power conversion - verify SOA at your specific VDS/ID combination before deployment.
Place a 10 kohm gate-source pull-down resistor as close as possible to the gate pin to prevent dv/dt-induced turn-on during fast drain-voltage transitions. Keep the gate trace short (< 5 mm) and route it away from the drain node to minimize parasitic feedback capacitance. For SSR applications, add a small ferrite bead or 100 ohm resistor in series with the gate to dampen ringing from the optocoupler capacitance. Refer to Infineon application note 'SIPMOS Small-Signal MOSFETs in SSR Circuits' for reference layout patterns.
Estimated: At a 600 V drain transition with 5 ns rise time, the Miller capacitance Crss of approximately 1.5 pF injects a gate-voltage spike of about VGS_spike = VDS_dvdt * Crss / Ciss. With Ciss around 30 pF and dv/dt of 120 V/ns, the spike reaches about 6 V - above the 4.5 V threshold and potentially causing shoot-through. Add a gate-source capacitor (1 nF ceramic) to slow the turn-on edge to > 50 ns, suppressing dv/dt-induced turn-on without significantly increasing switching loss.
Compliance Information
100% lead-free per Infineon datasheet. Halogen-free per IEC 61249-2-21. AEC-Q101 automotive qualified (note: AEC-Q101, not AEC-Q100; both are automotive reliability standards for discrete semiconductors and ICs respectively). dv/dt rated. RoHS and REACH compliant.
