BSZ018NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 23A/40A | Infineon
部品番号: BSZ018NE2LSATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.67 | $0.67 |
| 10 | $0.59 | $5.90 |
| 100 | $0.48 | $48.00 |
| 500 | $0.41 | $205.00 |
| 1,000 | $0.36 | $360.00 |
| 5,000 | $0.31 | $1,550.00 |
BSZ018NE2LSATMA1 概要
A power MOSFET is a voltage-controlled majority-carrier switch used to convert and regulate electrical energy with high efficiency. In the broader taxonomy, this N-channel enhancement-mode MOSFET belongs to the discrete power semiconductor family, typically paired with a gate driver IC and a PWM controller in switched-mode power supplies (SMPS), motor drives, and synchronous-rectifier stages. The OptiMOS 25V family from Infineon targets low-voltage, high-current applications where low RDS(on) and low gate charge are critical.
Key features of the BSZ018NE2LSATMA1 include an ultra-low typical on-resistance in the single-digit milliohm range, an optimized gate-charge (Qg) figure for reduced switching loss, a logic-level compatible gate threshold, and a lead-free, halogen-free package that is fully RoHS compliant. The PG-TSDSON-8-FL footprint uses a flat-lead design that improves solder-joint reliability under thermal-cycling stress compared with traditional gull-wing leads.
The MOSFET is built on Infineon's advanced trench OptiMOS process, which shrinks cell pitch and lowers figure-of-merit (FOM = RDS(on) x Qg). The exposed pad provides a low thermal-impedance path (RthJA optimized for 2 oz copper on standard JEDEC test boards), allowing the silicon to drive substantial continuous current when PCB copper is used as the heat-spreader.
Typical applications include synchronous rectification in 12V DC-DC buck converters for servers and telecom, battery protection and load switching in 1- to 4-cell Li-ion systems, hot-swap and eFuse circuits on 12V distribution rails, USB-PD power-path OR-ing, and motor-drive half-bridges for small BLDC fans. The 25V drain-source rating provides comfortable margin above nominal 12V rails, accommodating transients on automotive and industrial buses.
When designing with this part, place the gate-drive loop as tight as possible (gate resistor within 5 mm of the gate pin) and use a Kelvin-source connection if available. The exposed pad must be soldered to a copper pour of at least 25 mm² on each layer, stitched with thermal vias, to achieve the rated 69W dissipation at TC.
This page synthesizes distributor pricing, same-family drop-in alternatives, and practical PCB-layout design notes not found in the manufacturer datasheet.
ドロップイン代替品: BSZ018NE2LSATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: BSZ018NE2LSATMA1 （同一形状・フットプリント） — 相違点: Operating Temperature Range, Drain-Source Voltage (VDS), Package, Technology, MSL Level.
クイック比較ツール — 並列比較する代替部品を選択:
BSZ0501NS
✅ ドロップイン📋 参考代替品（カタログ未掲載）
BSZ0901NS
✅ ドロップイン📋 参考代替品（カタログ未掲載）
BSZ018NE2LSIATMA1
✅ ドロップイン✓ 在庫あり
$0.39 / 個
データシートを見る →ISC011N03L5SATMA1
✅ ドロップイン✓ 在庫あり
$0.47 / 個
データシートを見る →BSC020N03LSGATMA1
✅ ドロップイン✓ 在庫あり
$0.42 / 個
データシートを見る →BSC027N06LS5ATMA1
✅ ドロップイン✓ 在庫あり
$0.66 / 個
データシートを見る →BSZ018NE2LSATMA1 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 25V |
| Technology | N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (TA) | 23 A |
| Continuous Drain Current (TC) | 40 A |
| Power Dissipation (TA) | 2.1 W |
| Power Dissipation (TC) | 69 W |
| 動作温度範囲 | -55C to +150C |
| パッケージ | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| 実装タイプ | Surface Mount |
| RoHS ステータス | Compliant |
| Lead-Free | Yes |
| ハロゲンフリー | Yes |
BSZ018NE2LSATMA1 ピン構成
| ピン 1 | Source — Source connection (pin 1) |
| ピン 2 | Source — Source connection (pin 2) |
| ピン 3 | Source — Source connection (pin 3) |
| ピン 4 | Gate — Gate drive input |
| ピン 5 | Drain — Drain connection (pin 5) |
| ピン 6 | Source — Source connection (pin 6) |
| ピン 7 | Source — Source connection (pin 7) |
| ピン 8 | Source — Source connection (pin 8) |
安全動作領域 (DC)
主な用途
BSZ018NE2LSATMA1 の用途: 7 件s: 12V Synchronous Rectification in DC-DC Buck Converters, Multi-Cell Li-Ion Battery Protection and Load Switching, USB-PD Power-Path OR-ing and Source Selection, Hot-Swap and eFuse Circuits on 12V Distribution Rails, BLDC Motor Drive Half-Bridge for Small Fans and Pumps, Automotive 12V Load Switching and Body Electronics, LED Driver and Lighting Power Stage.
12V Synchronous Rectification in DC-DC Buck Converters
The BSZ018NE2LSATMA1 is well suited to the low-side synchronous rectifier position in 12V-to-low-voltage buck converters for servers, telecom, and graphics-card power stages. Its 25V VDS rating provides ample margin above a 12V bus including ringing transients, and the low RDS(on) keeps conduction loss under 1% of output power at full 20A load. Placed between the SW node and PGND with a gate-driver such as the Infineon 2ED21834S06JXUMA1, the device enables >95% efficiency at 500 kHz switching frequency. The PG-TSDSON-8-FL package footprint fits the standard 5x6 mm power-pad land pattern used across the industry.
おすすめ
Multi-Cell Li-Ion Battery Protection and Load Switching
For 2S-4S Li-ion battery packs (8.4V to 16.8V nominal), the BSZ018NE2LSATMA1 serves as the load-switch or charge-discharge FET in the protection circuit. Its 25V VDS covers the maximum 4S charging voltage of 16.8V plus transient spikes, and the 23A continuous rating supports 5A-10A continuous discharge with proper PCB heatsinking. The low RDS(on) reduces I²R loss during high-current discharge, extending battery runtime by 1-2% in mobile applications. Pair with a battery management IC for cell-balancing and overcurrent protection, and place a TVS across drain-source for hot-plug transient suppression.
おすすめ
USB-PD Power-Path OR-ing and Source Selection
In USB-PD sink applications with multiple input sources (barrel jack, USB-C, internal battery), the BSZ018NE2LSATMA1 functions as the OR-ing MOSFET that prevents back-feeding between sources. Its 25V VDS covers the 20V maximum USB-PD voltage with margin, and the low RDS(on) keeps conduction loss under 200 mW at 5A continuous load. Place the body diode reverse-biased and drive the gate from the higher of the two input rails through a simple Zener-clamp level shifter. Add a small TVS such as SMAJ24CA across drain-source to absorb cable-disconnect inductive transients.
おすすめ
Hot-Swap and eFuse Circuits on 12V Distribution Rails
The BSZ018NE2LSATMA1 is well suited as the pass-MOSFET in 12V hot-swap and eFuse circuits for server, networking, and industrial equipment. Its 25V VDS rating absorbs inrush-transient overshoot when downstream bulk capacitors charge, and its 69W TC power dissipation allows sustained current limiting at 10-15A. Pair with a hot-swap controller such as the LTC4215 or LM5060 to provide programmable current limit, fault timing, and auto-retry. The exposed pad provides sufficient thermal mass to ride through 100 ms fault events without tripping thermal shutdown.
おすすめ
BLDC Motor Drive Half-Bridge for Small Fans and Pumps
For 12V or 24V brushless-DC motor drives in small fans, pumps, and appliance pumps, the BSZ018NE2LSATMA1 serves as the low-side or high-side switch in a 3-phase half-bridge inverter. Its 25V VDS covers 24V industrial bus voltage with comfortable margin, and its 23A continuous rating supports motors up to 200W mechanical output. The trench OptiMOS process provides fast switching (sub-50 ns turn-off) for clean PWM at 20-50 kHz. Pair with a 3-phase gate driver such as the IRS2184SPBF or 6ED2230S12T to simplify the bootstrap-supply design.
おすすめ
Automotive 12V Load Switching and Body Electronics
Although the BSZ018NE2LSATMA1 itself is not AEC-Q101 qualified, the same PG-TSDSON-8-FL footprint supports automotive-grade equivalents (BSZ018NE2LSIATMA1 industrial variant) for body-electronics modules. The 25V VDS handles automotive load-dump transients up to 35V when paired with a TVS clamp, and the low RDS(on) reduces I²R loss in headlamp, seat-heater, and window-lift driver stages. The exposed-pad package enables through-hole-like thermal performance in surface-mount reflow assembly, and the lead-free halogen-free materials meet automotive OEM material-compliance requirements.
おすすめ
LED Driver and Lighting Power Stage
In commercial LED drivers (12V-24V input, 350 mA to 2 A output), the BSZ018NE2LSATMA1 functions as the main switching element in a buck or buck-boost topology. The 25V VDS covers 24V industrial LED rails with margin, and the low RDS(on) keeps conduction loss below 1% of total driver output, contributing to 5-10% efficiency improvement versus older planar MOSFETs. The PG-TSDSON-8-FL package is small enough for compact MR16 and PAR30 bulb form factors while dissipating up to 2.1W in free air at TA. Pair with a hysteretic or PFC controller for flicker-free dimming performance.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: BSZ018NE2LSATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | BSZ0501NS | BSZ0901NS | BSZ018NE2LSIATMA1 | ISC011N03L5SATMA1 | BSC020N03LSGATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TSDSON-8-FL | PG-TSDSON-8-FL | PG-TSDSON-8-FL | PG-TSDSON-8-FL | PG-TSDSON-8-FL | PG-TSDSON-8-FL |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| VDS (V) | 25 | 25 | 25 | 25 | 30 | 30 |
| OptiMOS Generation | OptiMOS 25V | OptiMOS 25V | OptiMOS 25V | OptiMOS 25V | OptiMOS 5 30V | OptiMOS 30V |
| Operating Temperature Range (C) | -55 to +150 | -55 to +150 | -55 to +150 | -55 to +150 | -55 to +150 | -55 to +150 |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
主な差別化要因
- Lowest RDS(on) in OptiMOS 25V family for low-side sync-rectifier position （vs BSZ0501NS)
- Better switching loss for high-frequency operation （vs BSZ0901NS)
- Same die with automotive and industrial qualification paths （vs BSZ018NE2LSIATMA1)
設計ノート
Estimated: At TA=25C, continuous ID=23A produces 2.1W on the JEDEC 1oz test board. The PG-TSDSON-8-FL exposed pad must be soldered to a copper pour of at least 25 mm² on top layer plus stitched thermal vias to inner layers to approach the 69W TC rating. Without proper thermal via stitching, RthJA can rise 50-100%, limiting sustained current to ~10A. Use 4-8 thermal vias in a 0.3 mm pitch array under the exposed pad, with the inner pad connected to at least 1 oz copper on the opposite side.
Keep the gate-drive loop as compact as possible: place the gate resistor (typ. 10-22 Ω) within 5 mm of the gate pin, and route the gate return path directly to the source pin rather than to a distant system ground. This minimizes loop inductance and suppresses ringing that can cause spurious turn-on and shoot-through. For high-current applications above 20A, use the PGND copper pour as a return plane and stitch multiple source pins together with via arrays under the package.
Do not exceed the absolute maximum VGS rating of ±20V; a 10V gate drive is typical but a 12V drive can accelerate long-term threshold drift. Ensure the VDS transient during turn-off stays below 25V by including adequate snubber or TVS protection on inductive loads. When measuring RDS(on) at low ID, the test current must be pulsed to avoid self-heating errors. The PG-TSDSON-8-FL package is moisture-sensitive (MSL 2 or 3 per JEDEC J-STD-020) - bake parts before assembly if the sealed bag is opened beyond the floor-life clock.
In synchronous-rectifier applications, dead-time control is critical: too short and shoot-through can damage both FETs, too long and body-diode conduction adds reverse-recovery loss. Use a gate-driver IC with programmable dead-time (such as Infineon 2ED21834S06JXUMA1) rather than relying on RC delays. Add a 100 kΩ gate-to-source pull-down resistor to ensure the MOSFET stays off during controller start-up when the gate-drive supply is not yet stable.
コンプライアンス情報
RoHS and lead-free per Infineon OptiMOS product family documentation. Not AEC-Q100 qualified - choose IAUC60N04S6N044ATMA1 for automotive applications. Halogen-free per Infineon product page.
