IPD90P04P405ATMA2 - P-Channel 40V 90A OptiMOS MOSFET | Infineon
部品番号: IPD90P04P405ATMA2 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.35 | $1.35 |
| 10 | $1.18 | $11.80 |
| 100 | $0.98 | $98.00 |
| 500 | $0.82 | $410.00 |
| 1,000 | $0.69 | $690.00 |
IPD90P04P405ATMA2 概要
What is a P-Channel MOSFET? A P-Channel MOSFET is a metal-oxide-semiconductor field-effect transistor in which the channel is formed by holes rather than electrons, allowing it to turn ON when the gate is pulled below the source. In circuit terms it sits within the broader power-MOSFET hierarchy (power MOSFET → P-Channel variant → high-side/low-side switch → power management semiconductor) and is frequently selected for high-side switching because it can be driven directly by a low-side gate driver without a charge pump.
Key features include the ultra-low 4.7 mΩ RDS(on) at VGS = -10 V, a logic-level friendly threshold range, avalanche-rated single-pulse robustness, and a low thermal resistance path through the DPAK tab. The OptiMOS-P2 process technology minimizes gate charge (Qg) and output capacitance (Coss) for fast switching edges and reduced driver loss.
At the architecture level the device uses Infineon's trench-field-plate OptiMOS cell which shrinks die size per ampere, slashes Miller charge, and improves the FoM (RDS(on) × Qg). The result is a part that competes effectively with N-channel alternatives in 12 V and 24 V automotive systems where a high-side P-channel switch simplifies PCB layout and reduces bill-of-materials cost.
Typical applications include reverse-polarity protection, high-side load switches, DC motor drive H-bridges, USB-PD and battery management switches, and 12 V/24 V automotive body electronics such as ECU power rails and LED driver stages.
When designing with this part, observe the SOA curve carefully under pulsed loads, keep the gate drive below -20 V absolute, and provide adequate copper area on the DPAK tab to stay within the junction temperature rating during continuous high-current operation.
This page synthesizes distributor pricing, pin-compatible drop-in alternatives, and practical design notes not found in the standalone Infineon datasheet, giving engineers a faster path from selection to validated BOM.
ドロップイン代替品: IPD90P04P405ATMA2 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IPD90P04P405ATMA2 （同一形状・フットプリント） — 相違点: Drain-Source Voltage (VDS), Package, Operating Temperature Range, RoHS Status, MSL Level.
クイック比較ツール — 並列比較する代替部品を選択:
IPD90P04P4L04ATMA2
✅ ドロップイン✓ 在庫あり
$1.22 / 個
データシートを見る →IPD60P06P360ATMA2
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IPD90P03P4L04ATMA1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
IPD50P04P413ATMA2
✅ ドロップイン✓ 在庫あり
$0.42 / 個
データシートを見る →IPB120P04P4L03ATMA2
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$1.74 / 個
データシートを見る →BSZ018NE2LSATMA1
✅ ドロップイン✓ 在庫あり
$0.31 / 個
データシートを見る →IPD90P04P405ATMA2 最大定格＆電気的特性
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -40 V |
| Continuous Drain Current (ID, Tc) | -90 A |
| Power Dissipation (PD, Tc) | 125 W |
| On-Resistance RDS(on) at VGS = -10 V | 4.7 mΩ (typical) |
| Gate-Source Voltage (VGS) max | ±20 V |
| 動作温度範囲 | -55 °C to +175 °C (Tj) |
| パッケージ | PG-TO252-3-313 (DPAK, surface mount) |
| 実装タイプ | Surface Mount |
| ピン数 | 3 (Gate, Drain, Source) |
| Process Technology | OptiMOS-P2 (trench + field plate) |
| MSLレベル | 1 (per JEDEC J-STD-020) |
| RoHS ステータス | Compliant |
IPD90P04P405ATMA2 ピン構成
| ピン 1 | Gate — MOSFET gate drive input (pull low to turn ON) |
| ピン 2 | Drain — MOSFET drain; connected to tab for thermal dissipation |
| ピン 3 | Source — MOSFET source (typically tied to battery +V in high-side P-channel configuration) |
安全動作領域 (estimated from datasheet DC curve)
主な用途
IPD90P04P405ATMA2 の用途: 6 件s: 12V Automotive High-Side Load Switch, Reverse-Polarity Protection, DC Motor Drive H-Bridge (High-Side), USB-PD and Battery Management Load Switch, LED Driver High-Side Switch (Automotive), Industrial 24V Solenoid and Valve Driver.
12V Automotive High-Side Load Switch
The IPD90P04P405ATMA2 is ideally suited for 12 V automotive high-side switching because its P-channel polarity eliminates the bootstrap or charge-pump circuitry required by an N-channel high-side switch. With VDS = -40 V it tolerates 12 V battery transients (load-dump up to 35 V) with comfortable margin, and the 4.7 mΩ RDS(on) at VGS = -10 V keeps conduction loss low even at 30-50 A continuous currents. Typical use is body-control modules switching headlamps, seat heaters, or fuel pumps. Place the part between the battery +12 V rail and the load, with a 100 kΩ pull-up on the gate to default OFF and a low-side NPN driver or gate-driver IC to pull the gate to ground for ON. Unlike an N-channel high-side solution, no bootstrap capacitor or level-shifter is required, reducing BOM cost and PCB area.
おすすめ
Reverse-Polarity Protection
The IPD90P04P405ATMA2 serves as a high-current reverse-polarity protection element in 12 V/24 V systems, replacing traditional Schottky diodes to cut conduction loss by an order of magnitude. At 10 A forward current a Schottky diode drops ~0.5 V (5 W loss), whereas the P-channel MOSFET drops Iload × RDS(on) = 10 A × 4.7 mΩ = 47 mV (0.47 W loss) - a 10× efficiency improvement. Wire the source to the battery, drain to the load, and gate to ground through a resistor; if polarity reverses, the gate-source becomes forward-biased on the body diode and the channel stays off. The 90 A continuous rating allows the part to handle engine-cranking inrush currents, and the -40 V VDS provides margin for inductive flyback transients on automotive loads.
おすすめ
DC Motor Drive H-Bridge (High-Side)
The IPD90P04P405ATMA2 functions as the high-side switch in an H-bridge driving 12 V brushed DC motors up to ~30 A continuous. The P-channel configuration simplifies the gate-drive design compared to N-channel high-side bridges, which require bootstrap capacitors that struggle at >98% duty cycle. At VGS = -10 V the 4.7 mΩ RDS(on) keeps the high-side voltage drop to ~140 mV at 30 A (4.2 W dissipation per switch), well within the 125 W rating. For PWM frequencies up to 25 kHz the low gate charge enables clean switching edges. Pair this part with a complementary N-channel low-side MOSFET such as IRF1405PBF and a half-bridge driver like IRS2184SPBF for a robust 12 V/30 A motor driver stage.
おすすめ
USB-PD and Battery Management Load Switch
For USB-PD sink paths, e-Mobility battery management, and 1S-4S Li-ion battery protection circuits, the IPD90P04P405ATMA2 acts as a low-loss load switch between the pack and the system rail. Its 4.7 mΩ RDS(on) at -10 V VGS allows 5 A continuous with only 24 mV drop, well below USB-PD's voltage-tolerance budget. The P-channel drive means a single GPIO pulled low enables the switch, simplifying firmware sequencing. In battery protection the part handles inrush from charged output capacitors and supports hot-plug events. The 90 A pulsed rating accommodates 5V/3A USB-PD PPS negotiation surges. Place a TVS diode such as SMAJ33CA across the drain-source for ESD and transient suppression in handheld applications.
おすすめ
LED Driver High-Side Switch (Automotive)
In automotive LED headlamp and tail-lamp drivers, the IPD90P04P405ATMA2 provides high-side PWM dimming with low thermal load. Driving LEDs from the high side using a P-channel MOSFET allows the LED string common-anode to return directly to chassis ground, simplifying PCB layout and avoiding ground-shift artifacts. At a PWM frequency of 200 Hz to 1 kHz and 50% duty cycle at 5 A average LED current, the part dissipates 0.5 × 5² × 0.0047 = 0.06 W per switch - negligible. The 40 V VDS rating protects against load-dump and jump-start transients up to 35 V on 12 V systems, and the DPAK package easily dissipates the resulting heat without a heatsink.
おすすめ
Industrial 24V Solenoid and Valve Driver
The IPD90P04P405ATMA2 enables 24 V industrial solenoid and proportional-valve drivers where reverse-polarity protection and high inrush handling are required. Solenoids draw 5-10× their holding current at turn-on (10-30 A pulses), well within the part's 90 A continuous rating when pulsed for <100 ms. The P-channel high-side connection keeps the solenoid return at chassis ground, eliminating ground loops in distributed I/O. The 4.7 mΩ RDS(on) keeps steady-state dissipation below 1 W per switch even at 15 A holding current, and the wide -55 °C to +175 °C Tj range supports outdoor cabinet installations. A flyback diode across the solenoid or an active clamp using a TVS handles inductive kickback at turn-off.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IPD90P04P405ATMA2 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IPD90P04P4L04ATMA2 | IPD60P06P360ATMA2 | IPD90P03P4L04ATMA1 | IPD50P04P413ATMA2 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same-brand) | Infineon (same-brand) | Infineon (same-brand) | Infineon (same-brand) |
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -40 V | -40 V | -60 V | -40 V | -40 V |
| Continuous Drain Current (ID) | -90 A | -90 A | -60 A | -90 A | -50 A |
| On-Resistance RDS(on) at VGS = -10 V | 4.7 mΩ | 4.7 mΩ | 6 mΩ | 4.7 mΩ | 5 mΩ |
| Power Dissipation (PD, Tc) | 125 W | 125 W | 100 W | 125 W | 115 W |
| Process Technology | OptiMOS-P2 | OptiMOS-P2 (lower Qg) | OptiMOS-P | OptiMOS-P2 (lower Qg) | OptiMOS-P |
主な差別化要因
- Lowest RDS(on) in Infineon -40 V P-channel DPAK family （vs IPD60P06P360ATMA2)
- OptiMOS-P2 process technology （vs IPD50P04P413ATMA2)
- Higher current rating than voltage-rated alternatives （vs IPD60P06P360ATMA2)
- P-channel polarity simplifies high-side drive （vs IRF1405PBF (N-channel))
設計ノート
Estimated: at VGS = -10 V, ID = 30 A continuous in free air with a 1 oz copper 1 in² pad on a 4-layer FR4 board, the DPAK junction-to-ambient thermal resistance is approximately 50 °C/W. Conduction loss is I² × RDS(on) = 30² × 0.0047 = 4.2 W, producing a ~210 °C junction temperature rise above 25 °C ambient - well above the 175 °C Tj max. Derate to 20 A continuous or add a heatsink/2 oz copper pour to stay within thermal limits.
Place the DPAK drain tab on a copper pour equal to at least 1 square inch of 1 oz copper to act as the primary heat sink. Route the high-current source trace on the top layer to minimize parasitic inductance. Keep the gate trace short and away from the drain switching node; add a 10 kΩ gate-source resistor to prevent accidental turn-on from Miller-induced dv/dt. Use a star-ground topology if multiple high-current switches share the same return path.
Do not exceed ±20 V VGS - the gate oxide will be permanently damaged. Do not operate the device in linear mode (VDS between 1 V and VDSmax with continuous high current) for more than a few milliseconds - the SOA curve drops sharply above 5 V. Always provide a TVS or flyback path across inductive loads; the P-channel MOSFET's body diode is rated for average forward current only. Finally, verify the gate-drive pull-down can sink the miller current during turn-off (a 1 kΩ gate resistor with a 10 mA driver suffices).
For PWM applications above 20 kHz, add a small RC snubber (10 Ω + 1 nF) across drain-source to slow the switching edge and reduce ringing on the parasitic drain inductance. A gate-source ferrite bead or 100 Ω resistor in series with the gate can dampen high-frequency gate oscillations. Keep the source inductance below 5 nH by using a wide, short source-return trace directly to the load ground.
コンプライアンス情報
Automotive-qualified per Infineon OptiMOS-P2 family datasheet; AEC-Q100 Grade 1 capable. RoHS and REACH compliant per Infineon product page. Halogen-free per JEDEC JS709B definition.
