CSD13302W - 12V N-Channel NexFET MOSFET | Texas Instruments
部品番号: CSD13302W ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.45 | $0.45 |
| 10 | $0.38 | $3.80 |
| 100 | $0.29 | $29.00 |
| 500 | $0.24 | $120.00 |
| 1,000 | $0.19 | $190.00 |
CSD13302W 概要
A power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between drain and source terminals via an insulated gate voltage. The CSD13302W is an enhancement-mode N-channel device, meaning it requires a positive gate-to-source voltage to conduct. As a discrete semiconductor, it belongs to the MOSFET family, which is a subset of transistors, which are fundamental building blocks in electronic circuits.
Key features of the CSD13302W include a low gate charge (Qg) of 4.1nC at VGS=4.5V, which enables fast switching and reduces driver losses. The device also offers excellent thermal performance with a power dissipation of 1.8W at 25°C ambient, and it is RoHS compliant and lead-free. The 4-DSBGA (1x1) package provides a compact footprint with a height of only 0.4mm, suitable for ultra-thin designs.
Technically, the CSD13302W utilizes TI's NexFET technology, which optimizes the MOSFET structure to achieve low on-resistance and gate charge simultaneously. This results in a figure of merit (RDS(on) x Qg) that is competitive in its class. The device is designed for low-voltage applications up to 12V, with a maximum gate-source voltage rating of ±8V. It also features an integrated ESD protection diode, enhancing robustness in handling.
Typical applications include load switches in smartphones, tablets, and wearables, where the small package and low on-resistance minimize power loss and PCB area. It is also used in battery management systems for overcurrent protection and in DC-DC converter synchronous rectification stages. The low threshold voltage (VGS(th) of 0.9V) allows direct driving from low-voltage logic.
When designing with the CSD13302W, ensure that the gate drive voltage is sufficient to fully enhance the channel (recommended VGS=4.5V) to achieve the lowest on-resistance. Also, consider the thermal path: the WLP package relies on the PCB copper for heat spreading, so adequate thermal vias and copper area are necessary for high-current operation.
ドロップイン代替品: CSD13302W — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: CSD13302W （同一形状・フットプリント） — 相違点: Package.
クイック比較ツール — 並列比較する代替部品を選択:
CSD15571Q2
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.19 / 個
データシートを見る →CSD13301W
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
CSD13303W
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
CSD13304W
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
CSD13305W
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
CSD13306W
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
CSD13307W
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
CSD13308W
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
CSD13302W 最大定格＆電気的特性
| Technology | NexFET |
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 12 V |
| Continuous Drain Current (ID) | 1.6 A (Ta=25°C) |
| On-Resistance (RDS(on)) | 14.6 mΩ (typ) at VGS=4.5V |
| Gate Charge (Qg) | 4.1 nC at VGS=4.5V |
| Threshold Voltage (VGS(th)) | 0.9 V |
| Maximum Gate-Source Voltage | ±8 V |
| Power Dissipation (PD) | 1.8 W (Ta=25°C) |
| パッケージ | 4-DSBGA (1x1) |
| 実装タイプ | Surface Mount |
| Height | 0.4 mm |
| RoHS ステータス | Compliant |
| Lead-Free | Yes |
| 動作温度範囲 | -55°C to +150°C |
CSD13302W ピン構成
| ピン A1 | G — Gate |
| ピン A2 | S — Source |
| ピン B1 | D — Drain |
| ピン B2 | D — Drain |
安全動作領域
主な用途
CSD13302W の用途: 6 件s: Load Switching in Portable Electronics, Battery Protection, DC-DC Converter Synchronous Rectification, Power Management in Wearables, IoT Devices, Audio Amplifier Power Switching.
Load Switching in Portable Electronics
The CSD13302W is ideal for load switching in smartphones, tablets, and wearables due to its ultra-small 1x1mm package and low on-resistance of 14.6mΩ. It minimizes power loss and PCB area, enabling efficient power gating. The low threshold voltage (0.9V) allows direct control from low-voltage logic, simplifying the design. In this role, the MOSFET acts as a series switch, disconnecting the load when not in use to save battery life. The low gate charge (4.1nC) ensures fast switching, reducing transition losses. Thermal performance is adequate for typical load currents up to 1.6A, provided the PCB has sufficient copper area for heat spreading.
おすすめ
Battery Protection
In battery management systems, the CSD13302W is used for overcurrent and overvoltage protection. Its low on-resistance (14.6mΩ) minimizes voltage drop and power dissipation, ensuring efficient battery operation. The small package fits compact battery packs. The MOSFET is placed in series with the battery and load, and is turned off during fault conditions. The low threshold voltage allows direct connection to protection ICs. The device's 12V rating is suitable for single-cell Li-ion batteries. Thermal management is critical during high-current faults, but the 1.8W power dissipation rating provides adequate margin for typical protection scenarios.
おすすめ
DC-DC Converter Synchronous Rectification
The CSD13302W is used as a low-side MOSFET in synchronous buck converters for portable devices. Its low gate charge (4.1nC) and low on-resistance (14.6mΩ) reduce switching and conduction losses, improving efficiency. The small package is ideal for space-constrained power stages. In this application, the MOSFET is driven by a controller IC, and its fast switching speed minimizes dead time. The 12V rating is suitable for 5V and 3.3V rails. The device's thermal performance is adequate for typical load currents, but proper PCB layout with thermal vias is essential for high-current operation.
おすすめ
Power Management in Wearables
The CSD13302W is well-suited for power management in wearables like smartwatches and fitness trackers. Its ultra-small 1x1mm package and low profile (0.4mm) fit thin device designs. The low on-resistance (14.6mΩ) ensures efficient power delivery, extending battery life. The device can be used for load switching, battery protection, and power rail switching. The low threshold voltage (0.9V) allows direct control from low-voltage microcontrollers. The 1.8W power dissipation is sufficient for the low power requirements of wearables. The device's RoHS compliance and lead-free construction meet environmental standards.
おすすめ
IoT Devices
In IoT devices, the CSD13302W is used for power gating and load switching to minimize standby power consumption. Its low gate charge (4.1nC) and low on-resistance (14.6mΩ) are ideal for battery-powered applications. The small package is suitable for compact IoT modules. The device can be driven directly by GPIO pins of low-power microcontrollers. The 12V rating covers typical IoT power rails. The thermal performance is adequate for the low currents in IoT devices. The device's small footprint allows for dense PCB layouts, which is critical for miniaturized IoT sensors and nodes.
おすすめ
Audio Amplifier Power Switching
The CSD13302W can be used for power switching in audio amplifiers, where clean power delivery is essential. Its low on-resistance (14.6mΩ) minimizes voltage drops, ensuring stable supply rails. The small package is suitable for compact audio devices. The device can be used to switch power to different audio sections, reducing noise. The low gate charge (4.1nC) enables fast switching, which is beneficial for power sequencing. The 12V rating is suitable for audio amplifier supply voltages. The device's thermal performance is adequate for the moderate currents in audio applications.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: CSD13302W — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | CSD15571Q2 | CSD13301W | CSD13303W |
|---|---|---|---|---|
| Package | 4-DSBGA (1x1) | 4-DSBGA (1x1) | 4-DSBGA (1x1) | 4-DSBGA (1x1) |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Drain-Source Voltage (VDS) | 12 V | 20 V | 12 V | 12 V |
| Continuous Drain Current (ID) | 1.6 A | 3 A | 1.8 A | 1.2 A |
| On-Resistance (RDS(on)) | 14.6 mΩ | 20 mΩ | 13.5 mΩ | 20 mΩ |
| Gate Charge (Qg) | 4.1 nC | 5.5 nC | 4.5 nC | 3.8 nC |
| Threshold Voltage (VGS(th)) | 0.9 V | 1.0 V | 0.9 V | 0.9 V |
| Power Dissipation (PD) | 1.8 W | 2.5 W | 2.0 W | 1.5 W |
主な差別化要因
- Ultra-small 1x1mm package （vs CSD15571Q2)
- Lower on-resistance （vs CSD13303W)
- Lower gate charge （vs CSD15571Q2)
設計ノート
The CSD13302W in the 4-DSBGA package relies on the PCB copper for heat dissipation. For continuous operation at 1.6A, ensure at least 1 square inch of copper area on the drain pad and use multiple thermal vias to the ground plane. The thermal resistance from junction to ambient is approximately 70°C/W, so at 1.8W dissipation, the junction temperature rise is about 126°C above ambient. For high ambient temperatures, derate the current accordingly.
Place the CSD13302W close to the load or switch node to minimize parasitic inductance. Use short, wide traces for the drain and source connections. The gate trace should be kept short and away from high-current paths to avoid noise coupling. A 10kΩ gate resistor can be added to reduce ringing, but it will slow down switching. For high-frequency switching, use a gate driver with appropriate drive strength.
Do not exceed the maximum gate-source voltage of ±8V. The low threshold voltage (0.9V) means the device can be partially turned on by noise, so ensure the gate is pulled low when off. Also, the WLP package is sensitive to mechanical stress; avoid bending the PCB near the device. For battery protection, consider the device's reverse current capability, as it is not designed for body diode conduction in reverse.
コンプライアンス情報
RoHS compliant and lead-free per TI product page. REACH and conflict minerals status not specified in the provided data.
