EP3SE260F1152C4N - Stratix III E FPGA 255K LE FC-FBGA-1152 | Intel
部品番号: EP3SE260F1152C4N ✗ 生産終了| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1850 | $1,850.00 |
| 5 | $1795 | $8,975.00 |
| 10 | $1750 | $17,500.00 |
| 25 | $1690 | $42,250.00 |
| 100 | $1620 | $162,000.00 |
EP3SE260F1152C4N 概要
An FPGA is a semiconductor device built around an array of configurable logic blocks (LABs/CLBs), embedded memory blocks (M9K/M144K), DSP blocks, and programmable I/O elements, all interconnected through a programmable routing fabric. The Stratix III E family sits within the broader hierarchy: FPGA -> programmable logic -> ASIC-replacement silicon -> logic IC -> semiconductor. By integrating hard DSP, memory, and transceiver IP, modern FPGAs replace discrete processors, DSPs, and glue logic on a single programmable device.
Key features of the EP3SE260F1152C4N include 10,200 LABs/CLBs, 768 embedded multipliers (18x18), and high-speed serial transceivers optimized for memory interfaces and parallel DSP pipelines. The device uses a fine-pitch FC-FBGA-1152 package with an exposed die-side thermal interface, allowing direct heatsink attachment for the 1.1 V / high-toggle-rate workloads typical of Stratix III designs. Speed grade -4 targets a balanced performance/power operating point suitable for commercial temperature designs.
The architecture combines 65 nm low-power CMOS logic with on-die termination, dynamic reconfigurability, and dedicated DDR2/DDR3 memory PHY blocks. Designers can instantiate soft-core processors (NIOS II), hardware DSP pipelines, and high-speed memory controllers simultaneously, making the EP3SE260 one of the largest logic-capacity members of the Stratix III E generation before the family transition to the Stratix IV/Stratix V generations.
Typical applications include ASIC prototyping and emulation, high-end digital signal processing, software-defined radio baseband, high-throughput video processing, and high-speed memory buffering. Designers choose this part when their design exceeds the logic, memory, and DSP density of smaller Cyclone III devices.
When designing with the EP3SE260F1152C4N, pay close attention to PCB power integrity: the 1.1 V core rail and the multiple auxiliary rails require bulk decoupling placed adjacent to the BGA balls, plus a thermal solution that covers the FC-BGA lid. Speed grade -4 is the slower commercial-temperature grade; -3 is faster, and -2 is industrial temperature.
This page synthesizes distributor pricing for the EP3SE260F1152C4N, same-family Stratix III E drop-in alternatives in the FC-FBGA-1152 footprint, and practical design notes not found in the manufacturer datasheet - making it easier to evaluate migration to EP3SE260F1152C3N, C2N, or the I-grade variants.
ドロップイン代替品: EP3SE260F1152C4N — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: EP3SE260F1152C4N （同一形状・フットプリント） — 相違点: Package, Speed Grade, Core Voltage, Process Technology, Operating Temperature.
クイック比較ツール — 並列比較する代替部品を選択:
EP3SE260F1152C3N
✅ ドロップイン✓ 在庫あり
$7500 / 個
データシートを見る →EP3SE260F1152C2N
✅ ドロップイン✓ 在庫あり
$11000 / 個
データシートを見る →EP3SE260F1152C4LN
✅ ドロップイン✓ 在庫あり
$1400 / 個
データシートを見る →EP3SE260F1152I3
✅ ドロップイン✓ 在庫あり
$16500 / 個
データシートを見る →EP3SE260F1152C2G
✅ ドロップイン✓ 在庫あり
$2050 / 個
データシートを見る →EP3SE260F1152C4N 最大定格＆電気的特性
| Series | Stratix III E |
| Family | Stratix III (Enhanced) |
| Logic Elements (LEs) | 255,000 |
| Embedded Memory | 16,672,768 bits (16.67 Mbit) |
| Maximum User I/Os | 744 |
| Number of LABs/CLBs | 10,200 |
| DSP / 18x18 Multipliers | 768 embedded multipliers |
| Process Technology | 65 nm CMOS |
| Core Voltage | 1.1 V |
| Maximum Operating Frequency | 450 MHz |
| パッケージ | 1152-ball FC-FBGA (flip-chip) |
| Speed Grade | -4 (commercial temperature) |
| 動作温度 | 0C to +85C (commercial, 'C' suffix) |
| 実装タイプ | Surface Mount (BGA) |
| Packaging | Tray |
| Lead-Free / RoHS | Lead-free finish (RoHS compliant per distributor listing) |
| メモリタイプ | SRAM-based, volatile (requires configuration device) |
| Configuration | External EPCS / enhanced configuration via AS, PS, JTAG, or FPP |
| Product Status | Obsolete (per Xecor cross-reference data) |
EP3SE260F1152C4N 1152-ball fc-fbga (flip-chip) ピン配置ガイド
EP3SE260F1152C4N (1152-ball fc-fbga (flip-chip) パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: EP3SE260F1152C4N.
詳細は データシート をご参照ください。
主な用途
EP3SE260F1152C4N の用途: 6 件s: ASIC Prototyping and Emulation, High-Performance Digital Signal Processing, Software-Defined Radio Baseband, High-Speed Video and Image Processing, High-Speed Memory Buffering and Switching, Test and Measurement Instrumentation.
ASIC Prototyping and Emulation
The EP3SE260F1152C4N is purpose-built for ASIC prototyping and emulation, where its 255,000 logic elements, 16,672,768 bits of embedded memory, and 768 18x18 DSP blocks allow designers to map large SoC blocks into a single programmable fabric. The FC-FBGA-1152 package exposes 744 user I/Os, providing the pin bandwidth required for trace buffers, transactor interfaces, and multi-FPGA partitioning. Designers pair the device with the Quartus II design suite and external EPCS configuration memory; the device supports partial reconfiguration so the same silicon can emulate multiple ASIC subsystems sequentially. This is one of the highest-density members of the Stratix III E family available with commercial temperature rating.
おすすめ
High-Performance Digital Signal Processing
The EP3SE260F1152C4N's 768 embedded 18x18 multipliers and high-speed memory blocks deliver high GMACS performance for compute-intensive DSP pipelines such as radar baseband, software-defined radio, and image processing. The 16.67 Mbit embedded memory bandwidth feeds the DSP blocks at the rate required for FIR filtering, FFT, and matrix-multiply workloads, while 65 nm CMOS power management keeps per-MAC power dissipation low. Designers use this part when the design requires >500 18x18 multipliers and >10 Mbit internal memory simultaneously - a workload that exceeds Cyclone III density.
おすすめ
Software-Defined Radio Baseband
Software-defined radio (SDR) baseband systems use the EP3SE260F1152C4N to implement multi-channel digital down-conversion, channelization, and modulation/demodulation in a single FPGA. The 65 nm Stratix III E architecture integrates dedicated DDR2/DDR3 memory PHYs, allowing the device to interface directly to high-bandwidth sample memory without external bridges. Its 744 I/Os are well-suited to ADC/DAC sample buses plus CPRI/OBSAI framer links. The 1.1 V core supply and 65 nm process balance performance-per-watt for thermally constrained base-station form factors.
おすすめ
High-Speed Video and Image Processing
The EP3SE260F1152C4N is well-matched to broadcast video processing, medical imaging, and machine-vision accelerator designs. Its 16.67 Mbit embedded memory absorbs full-HD frame buffers, while the 744 I/Os accept multi-lane MIPI-CSI, LVDS, or HD-SDI inputs via soft IPs. The 768 DSP blocks accelerate color-space transforms, scaling, and 2D filtering pipelines. Designers partition the FPGA into logical pipelines - capture, process, and output - all sharing the same DDR3 controller instantiated in the hardened memory PHY block.
おすすめ
High-Speed Memory Buffering and Switching
Memory buffering applications - SSD controllers, RAID accelerators, network packet buffers - benefit from the EP3SE260F1152C4N's 16.67 Mbit embedded memory plus hardened DDR2/DDR3 PHYs. The 1.1 V core and 65 nm process deliver low latency and high throughput for write-combining, read-prefetch, and CRC pipelines. The FC-FBGA-1152 package exposes enough I/Os (744) for multi-channel DDR3 plus multiple SATA/SAS or 10 GbE MAC interfaces, all routed within the same Stratix III E fabric.
おすすめ
Test and Measurement Instrumentation
ATE pin electronics, protocol analyzers, and high-speed logic analyzers are built around the EP3SE260F1152C4N because it offers the logic density and I/O count required to capture and pattern-generate multi-channel waveforms. The 16.67 Mbit embedded memory functions as a deep capture buffer, while 744 I/Os drive differential probes or pattern-generator channels. Industrial-temperature variants like the EP3SE260F1152I3 are deployed in lab and production-floor environments where ambient temperature is uncontrolled. Speed grade -4 is sufficient for the medium-speed digital channels typically used in ATE.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: EP3SE260F1152C4N — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | EP3SE260F1152C3N | EP3SE260F1152C2N | EP3SE260F1152C4LN | EP3SE260F1152I3 | EP3SE260F1152C2G |
|---|---|---|---|---|---|---|
| Package | 1152-ball FC-FBGA (flip-chip) | 1152-ball FC-FBGA - same | 1152-ball FC-FBGA - same | 1152-ball FC-FBGA - same | 1152-ball FC-FBGA - same | 1152-ball FC-FBGA - same |
| Brand | Intel (formerly Altera) | Intel - same | Intel - same | Intel - same | Intel - same | Intel - same |
| Logic Elements | 255,000 | 255,000 | 255,000 | 255,000 | 255,000 | 255,000 |
| Embedded Memory | 16,672,768 bits | 16,672,768 bits | 16,672,768 bits | 16,672,768 bits | 16,672,768 bits | 16,672,768 bits |
| User I/Os | 744 | 744 | 744 | 744 | 744 | 744 |
| Speed Grade | -4 (commercial) | -3 (commercial, faster) | -2 (industrial, fastest) | -4 (commercial, lead-free) | -3 (industrial) | -2 (commercial, lead-free) |
| Core Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Operating Temperature | 0C to +85C (commercial) | 0C to +85C (commercial) | -40C to +100C (industrial) | 0C to +85C (commercial) | -40C to +100C (industrial) | 0C to +85C (commercial) |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete |
主な差別化要因
- Highest-density Stratix III E device with active commercial-temperature options （vs EP3SE110F1152C4N)
- FC-FBGA-1152 high-I/O count enables single-chip multi-protocol designs （vs EP3C120F484 (Cyclone III))
- Drop-in speed-grade flexibility within the same FC-FBGA-1152 footprint （vs Stratix IV EP4SE230F29C2N)
設計ノート
The 1152-ball FC-FBGA package exposes a flip-chip die-side thermal interface that requires a heatsink or cold-plate directly attached to the lid for sustained high-toggle-rate designs. Estimated: at full logic utilization with 100% toggle rate on 1.1 V core and 50% of I/O toggling, the device can dissipate 15-25 W; a thermal interface material (TIM) plus copper spreader is required to keep the junction below 100C. Designers should follow Intel AN 456 'Stratix III PDN and Thermal Design Guide' for junction-to-ambient thermal resistance calculation and heatsink selection. Without a heatsink, the FC-BGA lid will exceed commercial temperature limits at >30% utilization.
The FC-FBGA-1152 package uses 1.0 mm ball pitch with flip-chip mounting - PCB design rules demand microvia stacks, via-in-pad plating, and a 6+ layer stackup to escape the BGA fanout. Per the Stratix III Device Handbook pin-out guidelines, each signal ball needs a 0.6 mm via pad with 0.15 mm drill, and 4 routing layers minimum between the BGA and DDR3 memory. Use the Intel BGA-1152 escape library for the specific speed-grade part to ensure signal-integrity-compliant fanout. Power-plane islands under the BGA must provide solid 1.1 V with <2 mOhm total inductance.
Common pitfalls for the EP3SE260F1152C4N include: (1) confusing the EP3SE260 (Stratix III E, 255K LE) with the EP3SE110 (Stratix III E, 107K LE) - they share the same FC-FBGA-1152 footprint, so a design compiled for 255K LE will not fit in an EP3SE110 part. (2) Mistaking speed grade -4 for industrial-temperature operation - 'C' suffix means commercial (0C-85C); for industrial use, select an 'I' suffix part such as EP3SE260F1152I3. (3) Failing to verify the configuration mode - this part is volatile and requires an external configuration device (EPCS or EPCQ) plus proper MSEL[2:0] strap pins.
コンプライアンス情報
RoHS compliance and lead-free finish per JAK Electronics and DigiKey distributor listings. AEC-Q100 not applicable (FPGA, not automotive-qualified per Altera/Intel catalog). REACH, halogen-free, and conflict-minerals declarations are not present in the Verified Web Data - mark as 'unknown' until Intel publishes an up-to-date compliance certificate.
