ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon
部品番号: ISC011N06LM5ATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.89 | $890.00 |
| 5,000 | $0.74 | $3,700.00 |
ISC011N06LM5ATMA1 概要
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an insulated gate to modulate conduction between source and drain. Within the power semiconductor hierarchy, the MOSFET sits below IGBTs in voltage class and below SiC/GaN wide-bandgap devices in switching frequency; OptiMOS 5 specifically represents Infineon's 60 V/100 V/150 V generation that targets synchronous rectification, motor drive, and hot-swap applications. The N-channel variant requires a positive gate drive relative to source.
Key features include 1.15 mOhm max RDS(on) at VGS=10 V (significantly reducing conduction losses versus older 60 V generations), 60 V VDS rating for 48 V automotive and telecom bus systems, and an optimized gate charge for fast switching at high frequencies. The SuperSO8 5x6 mm package exposes a large thermal pad, supporting the 188 W (Tc) dissipation rating while keeping board footprint compact. The OptiMOS 5 process technology improves Figure-of-Merit (RDS(on) x Qg) versus prior generations, enabling higher power density converters and lower-temperature operation.
Typical applications include synchronous rectification in 48 V DC-DC converters, hot-swap and OR-ing controllers, motor control H-bridges for e-mobility, and battery management protection FETs. The combination of very low RDS(on) and high pulsed current capability also makes it suitable for e-fuse and inrush-limiting circuits where the device must sustain surge currents without tripping.
When designing with this MOSFET, ensure the gate driver can supply the peak gate current required for the total gate charge (Qg) at the desired switching frequency, and provide sufficient PCB copper area beneath the exposed pad to keep junction temperature within the 175 C absolute maximum. Always observe the SOA curve for pulsed-current applications such as hot-swap.
This page synthesizes distributor stock, parametric alternatives in the same SuperSO8 footprint, and practical design notes not collated in the manufacturer datasheet, helping engineers select between ISC011N06LM5 variants and competing 60 V MOSFETs.
ドロップイン代替品: ISC011N06LM5ATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: ISC011N06LM5ATMA1 （同一形状・フットプリント） — 相違点: Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Series.
クイック比較ツール — 並列比較する代替部品を選択:
ISC009N06LM5ATMA1
✅ ドロップイン✓ 在庫あり
$2.86 / 個
データシートを見る →BSC034N06NSATMA1
✅ ドロップイン✓ 在庫あり
$0.65 / 個
データシートを見る →BSC027N06LS5ATMA1
✅ ドロップイン✓ 在庫あり
$0.66 / 個
データシートを見る →IQE008N03LM5ATMA1
✅ ドロップイン✓ 在庫あり
$0.94 / 個
データシートを見る →ISC058N04NM5ATMA1
✅ ドロップイン✓ 在庫あり
$0.6 / 個
データシートを見る →ISC060N10NM6ATMA1
✅ ドロップイン✓ 在庫あり
$1.43 / 個
データシートを見る →ISC046N13NM6ATMA1
✅ ドロップイン✓ 在庫あり
$1.08 / 個
データシートを見る →ISC011N06LM5ATMA1 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Part Number | ISC011N06LM5ATMA1 |
| Technology | OptiMOS 5 |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Ta | 37 A |
| Continuous Drain Current (ID) at Tc | 288 A |
| Power Dissipation (PD) at Ta | 3 W |
| Power Dissipation (PD) at Tc | 188 W |
| RDS(on) max at VGS=10V | 1.15 mOhm |
| パッケージ | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| 実装タイプ | Surface Mount |
| ピン数 | 8 |
| 動作温度範囲 | -55C to +175C |
| RoHS ステータス | Compliant |
ISC011N06LM5ATMA1 ピン構成
| ピン 1 | G — Gate |
| ピン 2 | S — Source |
| ピン 3 | S — Source |
| ピン 4 | D — Drain (connected to exposed pad) |
| ピン 5 | D — Drain (connected to exposed pad) |
| ピン 6 | D — Drain (connected to exposed pad) |
| ピン 7 | D — Drain (connected to exposed pad) |
| ピン 8 | S — Source |
ISC011N06LM5ATMA1 安全動作領域
主な用途
ISC011N06LM5ATMA1 の用途: 6 件s: 48V Synchronous Rectification, Hot-Swap and OR-ing Controller, BLDC Motor Drive (e-Mobility), Battery Management Protection FET, USB PD and High-Current USB Type-C, Telecom 48V Distributed Power.
48V Synchronous Rectification
The ISC011N06LM5ATMA1 is well suited as the low-side synchronous FET in 48 V to point-of-load DC-DC converters used in telecom and 48 V automotive architectures. Its 1.15 mOhm max RDS(on) at 10 V VGS directly reduces conduction loss, while the 60 V VDS rating provides ample headroom above 48 V nominal plus transient overshoot. The OptiMOS 5 process delivers low Qg/Qgd for fast switching at high frequency, enabling higher converter power density. Place the FET on a continuous copper pour beneath the exposed pad to keep junction temperature within safe limits at full load, and drive the gate with a 10 V capable driver for lowest RDS(on).
おすすめ
Hot-Swap and OR-ing Controller
The ISC011N06LM5ATMA1 functions as the main pass or OR-ing element in 48 V hot-swap and redundant power architectures. Its 288 A pulsed drain-current capability handles inrush transients when discharged bulk capacitance is connected, while the 1.15 mOhm RDS(on) minimizes steady-state voltage drop and dissipation in OR-ing applications. Designers must observe the SOA curve to ensure the device stays within thermal limits during the inrush event; gate-drive slew-rate control is essential to keep the operating point within the safe area. The SuperSO8 footprint allows dense layout with the hot-swap controller on the same board.
おすすめ
BLDC Motor Drive (e-Mobility)
In 48 V BLDC and e-mobility motor-drive half-bridges, the ISC011N06LM5ATMA1 is sized to switch phase currents up to several tens of amps with low conduction loss. The 1.15 mOhm RDS(on) keeps copper and thermal mass manageable on a SuperSO8 footprint, and the OptiMOS 5 technology supports the PWM frequencies typical of field-oriented control. Use a gate driver with sufficient peak current to charge Qg quickly and minimize dead time, which directly reduces switching loss. The 60 V rating covers 48 V bus transients from regen braking.
おすすめ
Battery Management Protection FET
The ISC011N06LM5ATMA1 can serve as a high-side or low-side protection FET in 48 V battery packs and industrial battery management systems. The 60 V VDS rating tolerates transient overvoltage events during disconnect, while the very low RDS(on) minimizes continuous loss when the battery is delivering full power. The SuperSO8 footprint supports the high currents of large-format lithium packs. Pair the FET with a dedicated battery protector IC that monitors overcurrent, short-circuit, and overtemperature to drive the gate within safe operating limits.
おすすめ
USB PD and High-Current USB Type-C
In 48 V to 20 V intermediate bus converters that power USB Power Delivery sinks, the ISC011N06LM5ATMA1 is used as the synchronous FET in high-current paths. Its low RDS(on) supports 100 W+ PD profiles without excessive drop, and the OptiMOS 5 platform keeps switching frequency high enough for compact magnetics. The SuperSO8 footprint fits within the dense Type-C adapter PCB. Designers must observe the SOA for cable plug-in surges when bulk capacitance charges through the FET.
おすすめ
Telecom 48V Distributed Power
In -48 V telecom distributed-power intermediate bus converters and battery-plant disconnect switches, the ISC011N06LM5ATMA1 is rated to switch 48 V rails with substantial current. The 60 V VDS rating covers the worst-case transient condition, and the 1.15 mOhm RDS(on) reduces the steady-state voltage drop that would otherwise accumulate in long distribution paths. The SuperSO8 footprint allows the FET to be placed close to the bus input connector for short, low-inductance power loops.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: ISC011N06LM5ATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | ISC009N06LM5ATMA1 | BSC034N06NSATMA1 | BSC027N06LS5ATMA1 | IQE008N03LM5ATMA1 | ISC058N04NM5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TDSON-8 (SuperSO8 family) | PG-TDSON-8 (SuperSO8 family) |
| VDS Max | 60 V | 60 V | 60 V | 60 V | 30 V | 40 V |
| RDS(on) Max at 10V | 1.15 mOhm | ~0.9 mOhm | 3.4 mOhm | 2.7 mOhm | 0.8 mOhm | 5.8 mOhm |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Pin-to-Pin Compatible | Yes (SuperSO8 standard) | Yes | Yes | Yes | Yes | Yes |
主な差別化要因
- Lowest RDS(on) in the Infineon 60V OptiMOS 5 SuperSO8 family （vs ISC009N06LM5ATMA1)
- Significantly lower RDS(on) than earlier 60V OptiMOS generations （vs BSC027N06LS5ATMA1)
- Higher VDS rating than the 30V sibling for 48V systems （vs IQE008N03LM5ATMA1)
設計ノート
Estimated: at a continuous drain current of 50 A and 1.15 mOhm max RDS(on), conduction loss is approximately 2.9 W, which the SuperSO8 package with adequate copper can dissipate to keep junction temperature rise under 50 C above ambient. For sustained operation near 100 A, use at least 1 square inch of 2 oz copper on both top and bottom layers connected by thermal vias directly beneath the exposed pad to keep Tj below 125 C.
Keep the high-current source and drain PCB traces short and wide to minimize parasitic inductance, which interacts with the high di/dt during switching to produce voltage overshoot above VDS max. Place the gate-driver loop (gate resistor, gate driver output, gate-source return) as compact as possible to avoid gate-oscillation. Use a ground plane directly under the driver to provide a low-impedance return for the gate-drive current and to avoid false triggering.
Do not assume the absolute maximum VDS rating of 60 V tolerates continuous operation at that level - derate by at least 20 percent (target VDS sustained below 48 V) to stay within reliable operating area. Always check the SOA curve for pulsed events such as hot-swap inrush; the DC SOA boundary may be lower than you expect at the high-VDS corner. Also verify the gate driver can sink enough current to discharge the gate quickly at turn-off, otherwise shoot-through can occur in half-bridge topologies.
The SuperSO8 PG-TDSON-8-17 package requires thermal vias directly under the exposed drain pad to carry heat into inner copper layers. Recommended pattern: an array of 0.3 mm vias on a 0.6 mm pitch, filled or plugged, with the inner layers using 2 oz copper or stitched copper pours to spread heat laterally. Avoid placing signal traces under the pad that would force the pad to be smaller and degrade thermal performance.
コンプライアンス情報
RoHS and lead-free confirmed on Infineon product page; AEC-Q100 automotive qualification not explicitly stated in the retrieved product snippet and should be verified on the Infineon automotive-grade product family page if required for automotive designs.
